IRF3415 Datasheet and Replacement
Type Designator: IRF3415
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 43 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 640 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: TO220AB
IRF3415 substitution
IRF3415 Datasheet (PDF)
irf3415.pdf

PD - 91477DIRF3415HEXFET Power MOSFET Advanced Process TechnologyD Dynamic dv/dt RatingVDSS = 150V 175C Operating Temperature Fast SwitchingRDS(on) = 0.042 Fully Avalanche RatedGDescription ID = 43ASFifth Generation HEXFETs from International Rectifierutilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenef
irf3415pbf.pdf

IRF3415PbF l Advanced Process Technologyl Dynamic dv/dt RatingDl 175C Operating Temperature l Fast Switchingl Fully Avalanche Rated l Lead-Free GDescription S
irf3415.pdf

isc N-Channel MOSFET Transistor IRF3415IIRF3415FEATURESStatic drain-source on-resistance:RDS(on) 42mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONCombine with the fast switching speed and ruggedized device designABSOLUTE MAXIMUM RATINGS(T =25)
auirf3415.pdf

PD - 97625AUTOMOTIVE GRADEAUIRF3415FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS150Vl Dynamic dv/dt Ratingl 175C Operating TemperatureRDS(on) max.0.042l Fast SwitchingGl Fully Avalanche RatedID43ASl Repetitive Avalanche Allowed up toTjmaxl Lead-Free, RoHS CompliantDl Automotive Qualified*SDescriptio
Datasheet: IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF9540N , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S .
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