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IRF350 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF350

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 150 W

Tensión drenaje-fuente |Vds|: 400 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 14 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 110(max) nC

Tiempo de elevación (tr): 190(max) nS

Conductancia de drenaje-sustrato (Cd): 680 pF

Resistencia drenaje-fuente RDS(on): 0.3 Ohm

Paquete / Caja (carcasa): TO3

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IRF350 Datasheet (PDF)

..1. 2n6768 irf350.pdf Size:144K _international_rectifier

IRF350 IRF350

PD - 90339FIRF350REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768HEXFETTRANSISTORS JANTXV2N6768THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF350 400V 0.300 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

..2. irf350.pdf Size:341K _st

IRF350 IRF350

..3. irf350 irf351 irf352 irf353.pdf Size:216K _samsung

IRF350 IRF350

0.1. auirf3504.pdf Size:223K _international_rectifier

IRF350 IRF350

PD - 97696AAUTOMOTIVE GRADEAUIRF3504FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance DV(BR)DSS40Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 7.8ml Fully Avalanche Rated G max 9.2ml Repetitive Avalanche AllowedSID87Aup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionSpecifically des

9.1. irf3515l.pdf Size:126K _international_rectifier

IRF350 IRF350

PD- 91899BIRF3515SSMPS MOSFET IRF3515LHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 150V 0.045 41A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage

9.2. irf3515s.pdf Size:126K _international_rectifier

IRF350 IRF350

PD- 91899BIRF3515SSMPS MOSFET IRF3515LHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 150V 0.045 41A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage

 9.3. irf3546m.pdf Size:674K _international_rectifier

IRF350 IRF350

60A Dual Integrated Power Block IRF3546 The IRF3546 dual integrated Power Block co-FEATURES packages two pairs of high performance control and synchronous MOSFETs and is ideal for use in high- Peak efficiency up to 94% at 1.2V density two-phase synchronous buck converters. It is Two pairs of control and synchronous optimized internally for PCB layout, heat transfer and

Otros transistores... IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , MMF60R280Q , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 .

 

 
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