All MOSFET. IRF350 Datasheet


IRF350 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF350

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 14 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 110(max) nC

Rise Time (tr): 190(max) nS

Drain-Source Capacitance (Cd): 680 pF

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO3

IRF350 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF350 Datasheet (PDF)

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IRF350 IRF350

PD - 90339FIRF350REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768HEXFETTRANSISTORS JANTXV2N6768THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF350 400V 0.300 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

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PD- 91899BIRF3515SSMPS MOSFET IRF3515LHEXFET Power MOSFETApplicationsVDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 150V 0.045 41A High speed power switchingBenefits Low Gate Charge Qg results in SimpleDrive Requirement Improved Gate, Avalanche and dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage

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60A Dual Integrated Power Block IRF3546 The IRF3546 dual integrated Power Block co-FEATURES packages two pairs of high performance control and synchronous MOSFETs and is ideal for use in high- Peak efficiency up to 94% at 1.2V density two-phase synchronous buck converters. It is Two pairs of control and synchronous optimized internally for PCB layout, heat transfer and

Datasheet: IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , HY1906P , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 .


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