All MOSFET. IRF350 Datasheet

 

IRF350 Datasheet and Replacement


   Type Designator: IRF350
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 110(max) nC
   tr ⓘ - Rise Time: 190(max) nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO3
 

 IRF350 substitution

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IRF350 Datasheet (PDF)

 ..1. Size:144K  international rectifier
2n6768 irf350.pdf pdf_icon

IRF350

PD - 90339FIRF350REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768HEXFETTRANSISTORS JANTXV2N6768THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF350 400V 0.300 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 ..2. Size:341K  st
irf350.pdf pdf_icon

IRF350

 ..3. Size:216K  samsung
irf350 irf351 irf352 irf353.pdf pdf_icon

IRF350

 0.1. Size:223K  international rectifier
auirf3504.pdf pdf_icon

IRF350

PD - 97696AAUTOMOTIVE GRADEAUIRF3504FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-Resistance DV(BR)DSS40Vl 175C Operating TemperatureRDS(on) typ.l Fast Switching 7.8ml Fully Avalanche Rated G max 9.2ml Repetitive Avalanche AllowedSID87Aup to Tjmaxl Lead-Free, RoHS Compliantl Automotive Qualified*DDescriptionSpecifically des

Datasheet: IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF830 , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 .

History: SVSP65R110THD4 | AP9420GM

Keywords - IRF350 MOSFET datasheet

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