All MOSFET. IRF350 Datasheet

 

IRF350 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF350

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 15 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 110 nC

Rise Time (tr): 65 nS

Drain-Source Capacitance (Cd): 390 pF

Maximum Drain-Source On-State Resistance (Rds): 0.3 Ohm

Package: TO3

IRF350 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF350 Datasheet (PDF)

0.1. irf350.pdf Size:341K _st

IRF350
IRF350

0.2. 2n6768 irf350.pdf Size:144K _international_rectifier

IRF350
IRF350

PD - 90339FIRF350REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768HEXFETTRANSISTORS JANTXV2N6768THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/543]400V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF350 400V 0.300 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique proces

 0.3. irf350 irf351 irf352 irf353.pdf Size:216K _samsung

IRF350
IRF350

Datasheet: IRF330 , IRF3315 , IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , SPA11N60C3 , IRF3515S , IRF360 , IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 .

 

 
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