IRF350 MOSFET PDF: N-Ch, 400V, 14A. Datasheet. Full specification with pinout and replacement list

IRF350 Specs and Replacement

   Type Designator: IRF350
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 190(max) nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO3

IRF350 substitution

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IRF350 datasheet

..1. Size:144K international rectifier
2n6768 irf350.pdf pdf_icon

PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒

..2. Size:341K st
irf350.pdf pdf_icon

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..3. Size:216K samsung
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0.1. Size:223K international rectifier
auirf3504.pdf pdf_icon

PD - 97696A AUTOMOTIVE GRADE AUIRF3504 Features HEXFET Power MOSFET l Advanced Planar Technology l Low On-Resistance D V(BR)DSS 40V l 175 C Operating Temperature RDS(on) typ. l Fast Switching 7.8m l Fully Avalanche Rated G max 9.2m l Repetitive Avalanche Allowed S ID 87A up to Tjmax l Lead-Free, RoHS Compliant l Automotive Qualified* D Description Specifically des... See More ⇒