APM4826K Todos los transistores

 ..1. Size:185K  anpec
 apm4826k.pdf

APM4826K N-Channel Enhancement Mode MOSFET Features Pin Description D D 30V/11A, D D RDS(ON) =9.5m (Typ.) @ VGS = 10V RDS(ON) =13.5m (Typ.) @ VGS = 4.5V S S Super High Dense Cell Design S G Avalanche Rated SOP-8 Reliable and Rugged (5,6,7,8) D D D D Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Computer

 8.1. Size:206K  anpec
 apm4820k.pdf

APM4820K N-Channel Enhancement Mode MOSFET Features Pin Description D D 30V/11A, D D RDS(ON) =12m (Typ.) @ VGS = 10V RDS(ON) =18m (Typ.) @ VGS = 4.5V S S Super High Dense Cell Design S G Reliable and Rugged SOP-8 Lead Free and Green Devices Available (5,6,7,8) D D D D (RoHS Compliant) Applications (4) G Power Management in Notebook Computer, Portable Equipmen

 8.2. Size:218K  anpec
 apm4828k.pdf

APM4828K N-Channel Enhancement Mode MOSFET Features Pin Description D D D 30V/12A, D RDS(ON) =12m (Max.) @ VGS =10V S RDS(ON) =18m (Max.) @ VGS =4.5V S S Super High Dense Cell Design G Avalanche Rated SOP-8 Reliable and Rugged (5,6,7,8) D D D D Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power Management in Notebook Computer, a

 8.3. Size:835K  cn vbsemi
 apm4828kc-trl.pdf

APM4828KC-TRL www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switc