APM4826K MOSFET Datasheet: N-Ch, 30V, 12A. Full specification with pinout and replacement list

APM4826K Specs and Replacement

Type Designator: APM4826K

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: SOP8

APM4826K substitution

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APM4826K datasheet

..1. Size:185K anpec
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APM4826K N-Channel Enhancement Mode MOSFET Features Pin Description D D 30V/11A, D D RDS(ON) =9.5m (Typ.) @ VGS = 10V RDS(ON) =13.5m (Typ.) @ VGS = 4.5V S S Super High Dense Cell Design S G Avalanche Rated SOP-8 Reliable and Rugged (5,6,7,8) D D D D Lead Free and Green Devices Available (RoHS Compliant) Applications (4) G Power Management in Notebook Computer... See More ⇒

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apm4820k.pdf pdf_icon

APM4820K N-Channel Enhancement Mode MOSFET Features Pin Description D D 30V/11A, D D RDS(ON) =12m (Typ.) @ VGS = 10V RDS(ON) =18m (Typ.) @ VGS = 4.5V S S Super High Dense Cell Design S G Reliable and Rugged SOP-8 Lead Free and Green Devices Available (5,6,7,8) D D D D (RoHS Compliant) Applications (4) G Power Management in Notebook Computer, Portable Equipmen... See More ⇒

8.2. Size:218K anpec
apm4828k.pdf pdf_icon

APM4828K N-Channel Enhancement Mode MOSFET Features Pin Description D D D 30V/12A, D RDS(ON) =12m (Max.) @ VGS =10V S RDS(ON) =18m (Max.) @ VGS =4.5V S S Super High Dense Cell Design G Avalanche Rated SOP-8 Reliable and Rugged (5,6,7,8) D D D D Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power Management in Notebook Computer, a... See More ⇒

8.3. Size:835K cn vbsemi
apm4828kc-trl.pdf pdf_icon

APM4828KC-TRL www.VBsemi.tw N-Channel 20V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.012 at VGS = 10 V 12 20 6.1 nC Optimized for High-Side Synchronous 0.015 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switc... See More ⇒

Detailed specifications: APM4568J, APM4568K, APM4588K, APM4800, APM4804K, APM4810K, APM4812K, APM4820K, 12N60, APM4828K, APM4835, APM4904K, APM4906K, APM4910K, APM4925, APM4925K, APM4947K