IRF360 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF360

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 300 W

Tensión drenaje-fuente |Vds|: 400 V

Tensión compuerta-fuente |Vgs|: 20 V

Corriente continua de drenaje |Id|: 25 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente |Vgs(th)|: 4 V

Carga de compuerta (Qg): 210(max) nC

Tiempo de elevación (tr): 140(max) nS

Conductancia de drenaje-sustrato (Cd): 900 pF

Resistencia drenaje-fuente RDS(on): 0.2 Ohm

Paquete / Caja (carcasa): TO3

Búsqueda de reemplazo de MOSFET IRF360

IRF360 Datasheet (PDF)

..1. irf360.pdf Size:139K _international_rectifier

PD - 90518REPETITIVE AVALANCHE AND dv/dt RATED IRF360400V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF360 400V 0.20 25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design a

9.1. irf3610spbf.pdf Size:252K _international_rectifier

PD - 97638AIRF3610SPbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power SupplyRDS(on) typ.9.3ml High Speed Power SwitchingG max. 11.6ml Hard Switched and High Frequency Circuits IDS 103ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and

9.2. irf3610spbf.pdf Size:294K _infineon

IRF3610SPbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power SupplyRDS(on) typ.9.3ml High Speed Power SwitchingG max. 11.6ml Hard Switched and High Frequency Circuits IDS 103ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

9.3. irf3610s.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF3610SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Otros transistores... IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , 4435 , IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 .

Liste

Recientemente añadidas las descripciónes de los transistores: