All MOSFET. IRF360 Datasheet


IRF360 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF360

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 400 V

Maximum Drain Current |Id|: 25 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 210 nC

Drain-Source Capacitance (Cd): 4200 pF

Maximum Drain-Source On-State Resistance (Rds): 0.23 Ohm

Package: TO3

IRF360 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


IRF360 Datasheet (PDF)

0.1. irf360.pdf Size:139K _international_rectifier


PD - 90518REPETITIVE AVALANCHE AND dv/dt RATED IRF360400V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF360 400V 0.20 25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design a

9.1. irf3610spbf.pdf Size:252K _international_rectifier


PD - 97638AIRF3610SPbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power SupplyRDS(on) typ.9.3ml High Speed Power SwitchingG max. 11.6ml Hard Switched and High Frequency Circuits IDS 103ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and

9.2. irf3610s.pdf Size:258K _inchange_semiconductor


Isc N-Channel MOSFET Transistor IRF3610SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , IRLR2905 , IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 .


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