IRF360 Datasheet. Specs and Replacement
Type Designator: IRF360 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 140 max nS
Cossⓘ - Output Capacitance: 900 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO3
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IRF360 substitution
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IRF360 datasheet
irf360.pdf
PD - 90518 REPETITIVE AVALANCHE AND dv/dt RATED IRF360 400V, N-CHANNEL HEXFET TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF360 400V 0.20 25A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design a... See More ⇒
irf3610spbf.pdf
IRF3610SPbF HEXFET Power MOSFET Applications D l High Efficiency Synchronous Rectification in SMPS VDSS 100V l Uninterruptible Power Supply RDS(on) typ. 9.3m l High Speed Power Switching G max. 11.6m l Hard Switched and High Frequency Circuits ID S 103A Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche ... See More ⇒
irf3610s.pdf
Isc N-Channel MOSFET Transistor IRF3610S FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt... See More ⇒
Detailed specifications: IRF3315L, IRF3315S, IRF340, IRF3415, IRF3415L, IRF3415S, IRF350, IRF3515S, P60NF06, IRF3710, IRF3710L, IRF3710S, IRF430, IRF440, IRF450, IRF451, IRF452
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
