All MOSFET. IRF360 Datasheet

 

IRF360 MOSFET. Datasheet pdf. Equivalent


   Type Designator: IRF360
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 300 W
   Maximum Drain-Source Voltage |Vds|: 400 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
   Maximum Drain Current |Id|: 25 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 210(max) nC
   Rise Time (tr): 140(max) nS
   Drain-Source Capacitance (Cd): 900 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
   Package: TO3

 IRF360 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

IRF360 Datasheet (PDF)

 ..1. Size:139K  international rectifier
irf360.pdf

IRF360 IRF360

PD - 90518REPETITIVE AVALANCHE AND dv/dt RATED IRF360400V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF360 400V 0.20 25AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design a

 9.1. Size:252K  international rectifier
irf3610spbf.pdf

IRF360 IRF360

PD - 97638AIRF3610SPbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power SupplyRDS(on) typ.9.3ml High Speed Power SwitchingG max. 11.6ml Hard Switched and High Frequency Circuits IDS 103ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and

 9.2. Size:294K  infineon
irf3610spbf.pdf

IRF360 IRF360

IRF3610SPbFHEXFET Power MOSFETApplicationsDl High Efficiency Synchronous Rectification in SMPSVDSS100Vl Uninterruptible Power SupplyRDS(on) typ.9.3ml High Speed Power SwitchingG max. 11.6ml Hard Switched and High Frequency Circuits IDS 103ABenefitsl Improved Gate, Avalanche and Dynamic dV/dtRuggednessl Fully Characterized Capacitance and Avalanche

 9.3. Size:258K  inchange semiconductor
irf3610s.pdf

IRF360 IRF360

Isc N-Channel MOSFET Transistor IRF3610SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

Datasheet: IRF3315L , IRF3315S , IRF340 , IRF3415 , IRF3415L , IRF3415S , IRF350 , IRF3515S , 8N60 , IRF3710 , IRF3710L , IRF3710S , IRF430 , IRF440 , IRF450 , IRF451 , IRF452 .

 

 
Back to Top