2021 Todos los transistores

 

2021 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2021
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
   |Id|ⓘ - Corriente continua de drenaje: 0.55 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm
   Paquete / Cubierta: SOT323

 Búsqueda de reemplazo de MOSFET 2021

 

2021 Datasheet (PDF)

 ..1. Size:473K  shenzhen
2021.pdf

2021 2021

Shenzhen Tuofeng Semiconductor Technology Co., Ltd2021N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) ( )0.310@ VGS=4.5V20 0.360@ VGS=2.5V0.460@ VGS=1.8VSOT-323 DescriptionsDThe 2021 is N-Channel enhancement MOS 3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable fo

 0.1. Size:309K  1
2sc2021 2sc4038.pdf

2021 2021

 0.2. Size:313K  1
2sc2021m 2sc4010.pdf

2021 2021

 0.3. Size:66K  philips
pssi2021say.pdf

2021 2021

PSSI2021SAYConstant current source in SOT353 packageRev. 03 27 August 2009 Product data sheet1. Product profile1.1 General descriptionResistor-equipped PNP transistor with two diodes on one chip in a SOT353 (SC-88A)plastic package. Stabilized output current of between 15 A and 50 mA by connection ofan external resistor between pins 4 and 5.1.2 Features One chip integrate

 0.4. Size:109K  philips
pbls2021d.pdf

2021 2021

PBLS2021D20 V, 1.8 A PNP BISS loadswitchRev. 02 6 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one packa

 0.5. Size:78K  philips
cgy2021g 2.pdf

2021 2021

INTEGRATED CIRCUITSDATA SHEETCGY2021GDCS/PCS 2 W power amplifier1997 Apr 03Preliminary specificationSupersedes data of 1996 Oct 15File under Integrated Circuits, IC17Philips Semiconductors Preliminary specificationDCS/PCS 2 W power amplifier CGY2021GFEATURES GENERAL DESCRIPTION Power Amplifier (PA) overall efficiency 50% (DCS) The CGY2021G is a DCS/PCS class 1 GaAs Mon

 0.6. Size:225K  nec
nesg2021m16.pdf

2021 2021

NPN SILICON GERMANIUM RF TRANSISTORNESG2021M16NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f

 0.7. Size:729K  nec
nesg2021m05.pdf

2021 2021

DATA SHEETNEC's NPN SiGe NESG2021M05HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: M05 SOT-343 footprint, with a height of only 0.59 mm Flat lead style for b

 0.8. Size:371K  samsung
ssd2021.pdf

2021 2021

I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDS1SSD2021 30V 0.05 5.0AN -Channel MOSFETAbsolute Maximum

 0.9. Size:309K  rohm
2sc2021.pdf

2021 2021

 0.10. Size:288K  diodes
dmp2021ufdf.pdf

2021 2021

DMP2021UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID maxV(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25C 16m @ VGS = -4.5V -9.0A Low Gate Threshold Voltage -20V -7.7A 22m @ VGS = -2.5V Low On-Resistance ESD protected Gate Totally Lead-Free & Full

 0.11. Size:45K  panasonic
2sa2021.pdf

2021

Transistors2SA2021Silicon PNP epitaxial planer typeUnit: mmFor general amplification0.33+0.05 0.10+0.050.02 0.02Complementary to 2SC56093 Features High foward current transfer ratio hFE 0.23+0.05 1 20.02(0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the0.800.05equipment and automatic insertion through the tape packing1.2

 0.12. Size:225K  fuji
2sk2021-01.pdf

2021 2021

N-channel MOS-FET2SK2021-01FAP-IIA Series 500V 1,6 5A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva

 0.13. Size:148K  triquint
tgf2021-04.pdf

2021 2021

Product DatasheetAugust 7, 2007DC - 12 GHz Discrete power pHEMT TGF2021-04Key Features and Performance Frequency Range: DC - 12 GHz > 36 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 4mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 300-500mA (Under RF Drive, Id rises from 300mA to 960mA)

 0.14. Size:145K  triquint
tgf2021-08.pdf

2021 2021

Product DatasheetAugust 7, 2007DC - 12 GHz Discrete power pHEMT TGF2021-08Key Features and Performance Frequency Range: DC - 12 GHz > 39 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 8mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 600-1000mA (Under RF Drive, Id rises from 600mA to 1920mA)

 0.15. Size:146K  triquint
tgf2021-02.pdf

2021 2021

Product DatasheetAugust 7, 2007DC - 12 GHz Discrete power pHEMT TGF2021-02Key Features and Performance Frequency Range: DC - 12 GHz > 33 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 2mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 150-250mA (Under RF Drive, Id rises from 150mA to 480mA)

 0.16. Size:153K  triquint
tgf2021-12.pdf

2021 2021

Product DatasheetAugust 7, 2007DC - 12 GHz Discrete power pHEMT TGF2021-12Key Features and Performance Frequency Range: DC - 12 GHz > 42 dBm Nominal Psat 58% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 12mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 900-1500mA (Under RF Drive, Id rises from 900mA to 2560mA

 0.17. Size:502K  willsemi
wnm2021.pdf

2021 2021

WNM2021WNM2021Http://www.sh-willsemi.com N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5VD20 0.260@ VGS=2.5VS0.320@ VGS=1.8VGSOT-323 DescriptionsDThe WNM2021 is N-Channel enhancement MOS 3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

 0.18. Size:269K  ruichips
ru2021h.pdf

2021 2021

RU2021HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/20A,RDS (ON) =4m (Typ.) @ VGS=10VRDS (ON) =5m (Typ.) @ VGS=4.5V Super High Dense Cell Design Low RDS(ON) Reliable and RuggedSOP-8 Lead Free and Green AvailableApplications DC/DC ConverterN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Rat

 0.19. Size:38K  sensitron
shd220212 shdc220212.pdf

2021 2021

SHD220212 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4067, REV B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 30 Volt, 0.019 Ohm MOSFET Hermetically Sealed Add a C after the SHD for ceramic seals (SHDC220212) Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GA

 0.20. Size:72K  sensitron
shd220213 shdc220213.pdf

2021 2021

SHD220213SENSITRON SEMICONDUCTORTECHNICAL DATADATA SHEET 4139, REV -HERMETIC POWER MOSFETN-CHANNEL LOGIC LEVELFEATURES: 55 Volt, 0.06 Ohm MOSFET Hermetically Sealed Add a C to the part number for ceramic seals (SHDC220213) Surface Mount PackageMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGAT

 0.21. Size:431K  slkor
wnm2021.pdf

2021 2021

WNM2021SOT-323 Plastic-Encapsulate MOSFETSW NM2021 N-Channel MOSFET IDV(BR)DSS RDS(on)MAX SOT-323 58m@4.5V20 V 2.3A@2.5V86m1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKING Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value

 0.22. Size:844K  cn vbsemi
wnm2021.pdf

2021 2021

WNM2021www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECA

 0.23. Size:206K  inchange semiconductor
mj12021.pdf

2021 2021

isc Silicon NPN Power Transistor MJ12021DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

 0.24. Size:180K  inchange semiconductor
2sd2021.pdf

2021 2021

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2021DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier TV verticaldeflection output applicationsABSOLUTE MAXIMUM RATINGS

 0.25. Size:215K  inchange semiconductor
2sk2021-01.pdf

2021 2021

isc N-Channel MOSFET Transistor 2SK2021-01DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


2021
  2021
  2021
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F

 

 

 
Back to Top