All MOSFET. 2021 Datasheet

 

2021 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2021

SMD Transistor Code: 213TF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.31 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 6 V

Maximum Drain Current |Id|: 0.55 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.31 Ohm

Package: SOT323

2021 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2021 Datasheet (PDF)

1.1. shd220213 shdc220213.pdf Size:72K _upd-mosfet

2021
2021

SHD220213 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4139, REV - HERMETIC POWER MOSFET N-CHANNEL LOGIC LEVEL FEATURES: œ 55 Volt, 0.06 Ohm MOSFET œ Hermetically Sealed œ Add a “C” to the part number for ceramic seals (SHDC220213) œ Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GAT

1.2. shd220212 shdc220212.pdf Size:38K _upd-mosfet

2021
2021

SHD220212 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4067, REV B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 30 Volt, 0.019 Ohm MOSFET • Hermetically Sealed • Add a “C” after the SHD for ceramic seals (SHDC220212) • Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GA

 1.3. pbls2021d.pdf Size:109K _philips

2021
2021

PBLS2021D 20 V, 1.8 A PNP BISS loadswitch Rev. 02 6 September 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor- Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one package

1.4. cgy2021g 2.pdf Size:78K _philips

2021
2021

INTEGRATED CIRCUITS DATA SHEET CGY2021G DCS/PCS 2 W power amplifier 1997 Apr 03 Preliminary specification Supersedes data of 1996 Oct 15 File under Integrated Circuits, IC17 Philips Semiconductors Preliminary specification DCS/PCS 2 W power amplifier CGY2021G FEATURES GENERAL DESCRIPTION Power Amplifier (PA) overall efficiency 50% (DCS) The CGY2021G is a DCS/PCS class 1 GaAs Monolith

 1.5. pssi2021say.pdf Size:66K _philips2

2021
2021

PSSI2021SAY Constant current source in SOT353 package Rev. 03 27 August 2009 Product data sheet 1. Product profile 1.1 General description Resistor-equipped PNP transistor with two diodes on one chip in a SOT353 (SC-88A) plastic package. Stabilized output current of between 15 A and 50 mA by connection of an external resistor between pins 4 and 5. 1.2 Features One chip integrated cons

1.6. nesg2021m05.pdf Size:729K _nec

2021
2021

DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: M05 SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF pe

1.7. nesg2021m16.pdf Size:225K _nec

2021
2021

NPN SILICON GERMANIUM RF TRANSISTOR NESG2021M16 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 5.2

1.8. ssd2021.pdf Size:371K _samsung

2021
2021

I I I I 8 SOIC FEATURES 8 S1 1 D1 G1 2 7 D1 3 6 S2 D2 Lower RDS(ON) 5 G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching Times D1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature Reliability G1 Product Summary Part Number BVdss Rds(on) ID S1 SSD2021 30V 0.05 5.0A N -Channel MOSFET Absolute Maximum Rat

1.9. 2sc2021.pdf Size:309K _rohm

2021
2021

1.10. 2sa2021.pdf Size:45K _panasonic

2021

Transistors 2SA2021 Silicon PNP epitaxial planer type Unit: mm For general amplification 0.33+0.05 0.10+0.05 0.02 0.02 Complementary to 2SC5609 3 Features High foward current transfer ratio hFE 0.23+0.05 1 2 0.02 (0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the 0.800.05 equipment and automatic insertion through the tape packing 1.200.05 5? A

1.11. tgf2021-02.pdf Size:146K _triquint

2021
2021

Product Datasheet August 7, 2007 DC - 12 GHz Discrete power pHEMT TGF2021-02 Key Features and Performance Frequency Range: DC - 12 GHz > 33 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 2mm x 0.35?m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 150-250mA (Under RF Drive, Id rises from 150mA to 480mA) Chip Dimensions:

1.12. tgf2021-12.pdf Size:153K _triquint

2021
2021

Product Datasheet August 7, 2007 DC - 12 GHz Discrete power pHEMT TGF2021-12 Key Features and Performance Frequency Range: DC - 12 GHz > 42 dBm Nominal Psat 58% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 12mm x 0.35?m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 900-1500mA (Under RF Drive, Id rises from 900mA to 2560mA) Chip Dimensio

1.13. tgf2021-04.pdf Size:148K _triquint

2021
2021

Product Datasheet August 7, 2007 DC - 12 GHz Discrete power pHEMT TGF2021-04 Key Features and Performance Frequency Range: DC - 12 GHz > 36 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 4mm x 0.35?m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 300-500mA (Under RF Drive, Id rises from 300mA to 960mA) Chip Dimensions:

1.14. tgf2021-08.pdf Size:145K _triquint

2021
2021

Product Datasheet August 7, 2007 DC - 12 GHz Discrete power pHEMT TGF2021-08 Key Features and Performance Frequency Range: DC - 12 GHz > 39 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 8mm x 0.35?m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 600-1000mA (Under RF Drive, Id rises from 600mA to 1920mA) Chip Dimension

1.15. mj12021.pdf Size:109K _inchange_semiconductor

2021
2021

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJ12021 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 450V(Min) ·Fast Turn-Off Time APPLICATIONS ·Designed for high resolution video systems, such as : high density graphic displays, data terminals, video scanners. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT

1.16. wnm2021.pdf Size:502K _willsemi

2021
2021

WNM2021 WNM2021 Http://www.sh-willsemi.com N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5V D 20 0.260@ VGS=2.5V S 0.320@ VGS=1.8V G SOT-323 Descriptions D The WNM2021 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

1.17. 2021.pdf Size:473K _shenzhen-tuofeng-semi

2021
2021

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2021 N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.310@ VGS=4.5V 20 0.360@ VGS=2.5V 0.460@ VGS=1.8V SOT-323 Descriptions D The 2021 is N-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable fo

1.18. ru2021h.pdf Size:269K _ruichips

2021
2021

RU2021H N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 20V/20A, RDS (ON) =4mΩ (Typ.) @ VGS=10V RDS (ON) =5mΩ (Typ.) @ VGS=4.5V • Super High Dense Cell Design • Low RDS(ON) • Reliable and Rugged SOP-8 • Lead Free and Green Available Applications • DC/DC Converter N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Rat

Datasheet: APM9984CCG , APM9986CO , APM9988CO , APM9988QA , SIR164DP , 1481 , 2015 , 2016 , IRF510 , 2026 , 2341 , 4401 , 4402 , 4407 , 4409 , 4410 , 4435 .

 
Back to Top

 


2021
  2021
  2021
 

social 

LIST

Last Update

MOSFET: CS5210PBF | CS5210 | CS520 | CS5103 | CS50N80 | CS50N06D | CS50N06 | CS4N70FA9D | CS4N70ARHD | CS4N65F | CS4N65A8HD | CS4N65A4TDY | CS4N65A4HDY | CS4N65A3TDY | CS4N65A3HDY |

 

 

 
Back to Top