Shenzhen Tuofeng Semiconductor Technology Co., Ltd2021N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) ( )0.310@ VGS=4.5V20 0.360@ VGS=2.5V0.460@ VGS=1.8VSOT-323 DescriptionsDThe 2021 is N-Channel enhancement MOS 3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable fo

PSSI2021SAYConstant current source in SOT353 packageRev. 03 27 August 2009 Product data sheet1. Product profile1.1 General descriptionResistor-equipped PNP transistor with two diodes on one chip in a SOT353 (SC-88A)plastic package. Stabilized output current of between 15 A and 50 mA by connection ofan external resistor between pins 4 and 5.1.2 Features One chip integrate

PBLS2021D20 V, 1.8 A PNP BISS loadswitchRev. 02 6 September 2009 Product data sheet1. Product profile1.1 General descriptionPNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)plastic package.1.2 Features Low VCEsat (BISS) and resistor-equipped transistor in one packa

INTEGRATED CIRCUITSDATA SHEETCGY2021GDCS/PCS 2 W power amplifier1997 Apr 03Preliminary specificationSupersedes data of 1996 Oct 15File under Integrated Circuits, IC17Philips Semiconductors Preliminary specificationDCS/PCS 2 W power amplifier CGY2021GFEATURES GENERAL DESCRIPTION Power Amplifier (PA) overall efficiency 50% (DCS) The CGY2021G is a DCS/PCS class 1 GaAs Mon

NPN SILICON GERMANIUM RF TRANSISTORNESG2021M16NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG) FEATURES The device is an ideal choice for low noise, high-gain at low current amplifications NF = 0.9 dB TYP., Ga = 18.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 3 mA, f

DATA SHEETNEC's NPN SiGe NESG2021M05HIGH FREQUENCY TRANSISTOR FEATURES HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz LOW PROFILE M05 PACKAGE: M05 SOT-343 footprint, with a height of only 0.59 mm Flat lead style for b

I I I I 8 SOICFEATURES8S1 1 D1G1 2 7 D13 6S2 D2 Lower RDS(ON)5G2 4 D2 Improved Inductive Ruggedness Top View Fast Swtching TimesD1 D1 Low Input Capacitance Extended Safe Operating Area Improved High Temperature ReliabilityG1Product SummaryPart Number BVdss Rds(on) IDS1SSD2021 30V 0.05 5.0AN -Channel MOSFETAbsolute Maximum

DMP2021UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.6mm Profile Ideal for Low Profile Applications ID maxV(BR)DSS RDS(ON) max PCB Footprint of 4mm2 TA = +25C 16m @ VGS = -4.5V -9.0A Low Gate Threshold Voltage -20V -7.7A 22m @ VGS = -2.5V Low On-Resistance ESD protected Gate Totally Lead-Free & Full

Transistors2SA2021Silicon PNP epitaxial planer typeUnit: mmFor general amplification0.33+0.05 0.10+0.050.02 0.02Complementary to 2SC56093 Features High foward current transfer ratio hFE 0.23+0.05 1 20.02(0.40) (0.40) SSS-mini type package, allowing downsizing and thinning of the0.800.05equipment and automatic insertion through the tape packing1.2

N-channel MOS-FET2SK2021-01FAP-IIA Series 500V 1,6 5A 60W> Features > Outline Drawing- High Speed Switching- Low On-Resistance- No Secondary Breakdown- Low Driving Power- High Voltage- VGS = 30V Guarantee- Avalanche Proof> Applications- Switching Regulators- UPS- DC-DC converters- General Purpose Power Amplifier> Maximum Ratings and Characteristics > Equiva

Product DatasheetAugust 7, 2007DC - 12 GHz Discrete power pHEMT TGF2021-04Key Features and Performance Frequency Range: DC - 12 GHz > 36 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 4mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 300-500mA (Under RF Drive, Id rises from 300mA to 960mA)

Product DatasheetAugust 7, 2007DC - 12 GHz Discrete power pHEMT TGF2021-08Key Features and Performance Frequency Range: DC - 12 GHz > 39 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 8mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 600-1000mA (Under RF Drive, Id rises from 600mA to 1920mA)

Product DatasheetAugust 7, 2007DC - 12 GHz Discrete power pHEMT TGF2021-02Key Features and Performance Frequency Range: DC - 12 GHz > 33 dBm Nominal Psat 59% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 2mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 150-250mA (Under RF Drive, Id rises from 150mA to 480mA)

Product DatasheetAugust 7, 2007DC - 12 GHz Discrete power pHEMT TGF2021-12Key Features and Performance Frequency Range: DC - 12 GHz > 42 dBm Nominal Psat 58% Maximum PAE 11 dB Nominal Power Gain Suitable for high reliability applications 12mm x 0.35m Power pHEMT Nominal Bias Vd = 8-12V, Idq = 900-1500mA (Under RF Drive, Id rises from 900mA to 2560mA

WNM2021WNM2021Http://www.sh-willsemi.com N-Channel, 20V, 0.89A, Small Signal MOSFET VDS (V) Rds(on) ( ) 0.220@ VGS=4.5VD20 0.260@ VGS=2.5VS0.320@ VGS=1.8VGSOT-323 DescriptionsDThe WNM2021 is N-Channel enhancement MOS 3Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

RU2021HN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 20V/20A,RDS (ON) =4m (Typ.) @ VGS=10VRDS (ON) =5m (Typ.) @ VGS=4.5V Super High Dense Cell Design Low RDS(ON) Reliable and RuggedSOP-8 Lead Free and Green AvailableApplications DC/DC ConverterN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Rat

SHD220212 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4067, REV B HERMETIC POWER MOSFET N-CHANNEL FEATURES: 30 Volt, 0.019 Ohm MOSFET Hermetically Sealed Add a C after the SHD for ceramic seals (SHDC220212) Surface Mount Package MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GA

SHD220213SENSITRON SEMICONDUCTORTECHNICAL DATADATA SHEET 4139, REV -HERMETIC POWER MOSFETN-CHANNEL LOGIC LEVELFEATURES: 55 Volt, 0.06 Ohm MOSFET Hermetically Sealed Add a C to the part number for ceramic seals (SHDC220213) Surface Mount PackageMAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.RATING SYMBOL MIN. TYP. MAX. UNITSGAT

WNM2021SOT-323 Plastic-Encapsulate MOSFETSW NM2021 N-Channel MOSFET IDV(BR)DSS RDS(on)MAX SOT-323 58m@4.5V20 V 2.3A@2.5V86m1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter Equivalent Circuit MARKING Maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value

WNM2021www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.036 at VGS = 10 V 4 TrenchFET Power MOSFET20 0.040 at VGS = 4.5 V 3.8 4 nC Typical ESD Protection 2000 V HBM0.048 at VGS = 2.5 V 3.6 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECA

isc Silicon NPN Power Transistor MJ12021DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 450V(Min)CEO(SUS)Fast Turn-Off TimeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high resolution video systems, such as : highdensity graphic displays, data terminals, video scanners.ABSOLUTE MAXIMUM RATINGS(T =25

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2021DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = 150V (Min)(BR)CEOWide Area of Safe OperationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifier TV verticaldeflection output applicationsABSOLUTE MAXIMUM RATINGS

isc N-Channel MOSFET Transistor 2SK2021-01DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsUPSDC-DC convertersGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aS