4401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 4401
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 6.1 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm
Paquete / Cubierta: SOP8
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4401 Datasheet (PDF)
4401.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd 44014401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4401 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), low gate charge and ID = -6.1 Aoperation with gate voltages as low as 2.5V. This RDS(ON)
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Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
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si4401bdy.pdf
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si4401ddy.pdf
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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
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mmbt4401lt1.pdf
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Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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MMBT4401L, SMMBT4401LSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR AEC-Q101 Qualified and PPAP Capable3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements1BASEMAXIMUM RATINGS2Rating Symbol Value Uni
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UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401LHalogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 32N4401-T9
2n4401g.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401LHalogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 32N4401-T9
2n4401l.pdf
UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401LHalogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 32N4401-T9
mmbt4401.pdf
UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 31 DESCRIPTION 2The UTC MMBT4401 is designed for use as a medium power SOT-23amplifier and switch requiring collector currents up to 500mA. (JEDEC TO-236)312SOT-323 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT4401G-AE3-R SOT-
2n4401.pdf
2N4401NPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application CFeatures B Low Leakage current Low collector saturation voltage enabling Elow voltage operation Complementary pair with 2N4403 TO-92 Ordering Information Type NO. Marking Package Code 2N4401 2N4401 TO-92Absolute maximum ratings T
mmbt4401.pdf
MMBT4401NPN Silicon TransistorDescriptions PIN Connection PIN Connection General purpose application Switching application Features Low Leakage current Low collector saturation voltage enabling low voltage operation Complementary pair with MMBT4403 SOT-23 Ordering Information Type NO. Marking Package Code 4P MMBT4401 SOT-23
2n4401.pdf
2N4401NPN TransistorElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant ProductTO-92A suffix of "-C" specifies halogen & lead-free4.550.2 3.50.2FeaturesPower Dissipationo MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO 60VCollector-Emitter Voltage VCEO 40VEmitter-Base Voltage
pzt4401.pdf
PZT4401NPN Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223DescriptionThe PZT4401 is designed for general purpose switching and amplifier applications.Features*High Power Dissipation: 1500mW at 25 oC*High DC Current Gain: 100~300 at 150mAMillimeterMillimeter*Complementary to PZT4403 REF. REF. Min. Max. Min. Max. A 6.70
mmbt4401w.pdf
MMBT4401WNPN SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductASOT-323LCOLLECTOR Dim Min Max3A 1.800 2.200STop ViewBB 1.150 1.35031C 0.800 1.000BASEV GD 0.300 0.4001G 1.200 1.40022CH 0.000 0.100EMITTERH J 0.100 0.250JDKK 0.350 0.500L 0.590 0.720S 2.000 2.400MAXIMUM RATINGSV 0.280 0.420Rating Symbo
mmbt4401.pdf
MMBT4401NPN SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeACOLLECTORSOT-23L3Dim Min Max33A 2.800 3.040STop View1 B11 2 B 1.200 1.400BASE2C 0.890 1.110V GD 0.370 0.5002EMITTERG 1.780 2.040CH 0.013 0.100J 0.085 0.177HJDKK 0.450 0.600L 0.890 1.020MAXIM
mmdt4401.pdf
MMDT4401NPN Plastic-EncapsulateElektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363* Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REFPower Dissipation. (0.525)REFO PCM : 0.2 W (Temp.=25 C) .053(1.35).096(2.45).045(1.15).085(2.15)Collector Current.018(0.46).010(0.26)ICM : 0.6 A.014(0.35).006(0.15)C B E.006(0.
cmbt4401.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT4401SILICON PLANAR EPITAXIAL TRANSISTORNPN transistorMarkingPACKAGE OUTLINE DETAILSCMBT4401 = 2XALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectoremitter voltage VCEO max. 40 VC
2n4401.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Value Unit Parameter 1.EMILTTER Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 V2.BASE VEBO Emitter-Base Voltage 6 V 3. COLLECTOR Collect
mmst4401.pdf
JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsMMST4401 TRANSISTOR (NPN)SOT323 FEATURES Complementary to MMST4403 Small Surface Mount PackageMARKING: K3XMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit 2. EMITTERV Collector-Base Voltage 60 V CBO3. COLLECTORV Collector-Emitter Vo
mmbt4401.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR (NPN) SOT23 FEATURES Switching Transistor MARKING:2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emitter-Base Vol
mmdt4401.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT4401 DUAL TRANSISTOR (NPN+NPN) DUAL TRANSISTOR (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2X Maximum Ratings (Ta = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-B
2n4401sc.pdf
SEMICONDUCTOR 2N4401SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LFEATURES Complementary to the 2N4403SCDIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90J 0.10K 0.00 ~ 0.10L 0.55M 0.20 MINMAXIMUM RATING (Ta=25)N 1.00+0.20/-0.10CHARAC
kn4400s kn4401s.pdf
SEMICONDUCTOR KN4400S/4401STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LDIM MILLIMETERS_+A 2.93 0.20FEATURES B 1.30+0.20/-0.15C 1.30 MAXComplementary to the KN4402S/4403S 23 D 0.40+0.15/-0.05E 2.40+0.30/-0.20Suffix U : Qualified to AEC-Q101.1G 1.90ex) KN4401S-RTK/HU H 0.95J 0.13+0.10/-0.05K 0
kn4400 kn4401.pdf
SEMICONDUCTOR KN4400/4401TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B C Complementary to KN4402/4403.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25 )C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 60 VG 0.85H 0.45VCEO _Collector-Emitter Vol
mmbt4401gh.pdf
Zowie Technology CorporationSwitching TransistorNPN SiliconLead free productHalogen-free typeCOLLECTOR33BASE11MMBT4401GH22EMITTERSOT-23MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSCharacteri
mmst4401.pdf
MMST4401TRANSISTOR(NPN)SOT323 FEATURES Complementary to MMST4403 Small Surface Mount Package MARKING: K3X MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 60 V CBO3. COLLECTOR V Collector-Emitter Voltage 40 V CEOV Emitter-Base Voltage 6 V EBOI Collector Current 600 mA CPC
mmbt4401.pdf
MMBT4401TRANSISTOR(NPN)SOT-23 FEATURES Switching transistor 1. BASE MARKING: MMBT4401=2X 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 600 mAPC Collector Power dissipation
mmbt4401.pdf
Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM4401MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 40 Vdc-
2n4401.pdf
2N4401(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Value Units Parameter Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VVEBO Emitter-Base Voltage 6 V Collector Current -Continuous IC 600 mACollector Power dissipation PC 0.625
mmbt4401.pdf
MMBT4401 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Switching transistor MARKING: MMBT4401=2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 60 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 40 VEmitter-Base Voltage VEBO 6 V Collector Current -Continuou
mmdt4401.pdf
MMDT4401 SOT-363 Dual Transistor (NPN)SOT-363Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2X Maximum Ratings (TA = 25 unless otherwise specified) Symbol Parameter Value Units Dimensions in inches and (millimeters)VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V
2n4401.pdf
2N4401General Purpose TransistorsNPN SiliconTO-92 FEATURES 11. EMITTER 2 Power dissipation 32. BASE PCM : 0.625 W Tamb=25 3. COLLECTOR Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJTstg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specifie
w4401dw.pdf
W4401DW2 13Epitaxial Planer Transistor654PNP Silicon12345 6SOT-363(SC-88)PNP+PNPMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V -50 VdcCEOCollector-Base Voltage VCBO -60 VdcEmitter-Base Voltage VEBO -6.0 VdcCollector Current-Continuous IC-150 mAdcThermal CharacteristicsCharacteristics Symbol Max Unit(1)Total Device Dissipati
mmbt4401.pdf
MMBT4401COLLECTOR3Switching Transistor NPN Silicon311BASE22SOT-23EMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base VOltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation FR-5 Board (1)mW
mmbt4401lt1.pdf
FM120-M WILLASMMBT4401LT1THRUGeneral Purpose TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesBatch process design, excellent power dissipation offersWe declare that the material of product compliance with RoHS requirements. better reverse leakage current and thermal resistance.
mmbt4401wt1.pdf
FM120-M WILLASTHRUMMBT4401WT1General Purpose Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to We declare
hmbt4401.pdf
Spec. No. : HE6815HI-SINCERITYIssued Date : 1993.06.30Revised Date : 2004.09.08MICROELECTRONICS CORP.Page No. : 1/5HMBT4401NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT4401 is designed for general purpose switching and amplifierapplications.SOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature..................................................
h2n4401.pdf
Spec. No. : HE6215HI-SINCERITYIssued Date : 1992.09.22Revised Date : 2002.02.22MICROELECTRONICS CORP.Page No. : 1/5H2N4401NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N4401 is designed for general purpose switching and amplifier applications.FeaturesTO-92 Complementary to H2N4403 High Power Dissipation: 625 mW at 25C High DC Current Gain: 100-300 at 150
am4401p.pdf
Analog Power AM4401PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = -10V -3.6 Low thermal impedance -150170 @ VGS = -5.5V -3.5 Fast switching speed Typical Applications: SOIC-8 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS
aft4401.pdf
AFT4401 Alfa-MOS Technology NPN General Purpose Amplifier Features This device is designed as a general purpose amplifier and switch. Pin Description ( SOT-23 ) Ordering Information Part Ordering No. Part Marking Package Unit Quantity AFT4401T1S23RG 2X SOT-23 Tape & Reel 3000 EA Absolute Maximum Ratings (TA=25 Unless otherwise noted) Symbol Parameter Value Unit VCEO Co
btc4401a3.pdf
Spec. No. : C203A3 Issued Date : 2007.10.16 CYStech Electronics Corp.Revised Date :2012.03.12 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC4401A3Description The BTC4401A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 0.2V(typ.) at I /I = 500mA/50mA
2n4401a3.pdf
Spec. No. : C203A3 Issued Date : 2003.06.06 CYStech Electronics Corp.Revised Date : 2011.12.28 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor 2N4401A3Description The 2N4401A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 0.2V(typ.) at I /I = 500mA/50mA C
sp4401.pdf
GreenProductSP4401aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12.5 @ VGS=-10VSuface Mount Package.-30V -8A18 @ VGS=-4.5V ESD Protected.D 5 4 G6 3D S7 2D SPin 1D 8 1STSON 3.3 x 3.3ABSOLUTE
mmbt4401.pdf
SOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsFEATURESFEATURESFEATURESFEATURESSwitching transistorSOT-23MARKING: MMBT4401=2XMARKING: MMBT4401=2XMARKING: MMBT4401=2XMARKING: MMBT4401=2XMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise no
2n4401.pdf
2N4401 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High current, Low voltage. / Applications I 500mA CMedium power amplifier and switch requiring collector currents up t
mmbt4401.pdf
MMBT4401 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 1ESD 4kV, 400VMoisture Sensitivity Level: 1, ESD Rating: Human Body Model; 4 kV, Machine Model; 400 V. / Applications I 500mA
2n4400 2n4401.pdf
2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit60 VCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO Emitter Base Vol
mmbt4401.pdf
MMBT4401 NPN Silicon General Purpose Transistor TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current Continuous IC 600 mATotal Device Dissipation FR-5 Board 1) Ptot 300 mWOThermal Resistance Junction to Ambient RJA 417 C/W
lmbt4401wt1g lmbt4401wt3g.pdf
LMBT4401WT1GS-LMBT4401WT1GGeneral Purpose Transistors NPN SiliconSC70(SOT-323)1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring3 Collector unique site and control change requirements; AEC-Q101 qualified and PPAP capable.1 Base2. DEVICE MARKING AND ORDERING
lmbt4401dw1t1g.pdf
LESHAN RADIO COMPANY, LTD.DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT4401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LMBT4401DW1T1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION654Device Marking ShippingLMBT4401
lmbt4401lt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLMBT4401LT1GS-LMBT4401LT1GFEATURES1) We declare that the material of product compliant with3 RoHS requirements and Halogen Free.2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1011 Qualified and PPAP Capable.2SOT-23DEVICE MARKING AND
lmbt4401wt1g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose Transistor We declare that the material of product compliance with RoHS requirements.LMBT4401WT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT4401WT1GORDERING INFORMATIONDevice Marking Shipping3LMBT4401WT1G2X 3000/Tape & Reel
lmbt4401lt1g lmbt4401lt3g.pdf
LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLMBT4401LT1GS-LMBT4401LT1GFEATURES1) We declare that the material of product compliant with3 RoHS requirements and Halogen Free.2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1011 Qualified and PPAP Capable.2SOT-23DEVICE MARKING AND
sm4401pskp.pdf
SM4401PSKPP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-55A,DDD RDS(ON)= 8m (max.) @ VGS=-20VD RDS(ON)= 9.4m (max.) @ VGS=-10V RDS(ON)= 15m (max.) @ VGS=-4.5VGPin 1SS HBM ESD capability level of 8KV typicalSDFN5x6A-8_EP 100% UIS + Rg Tested Reliable and Rugged( 5,6,7,8 )DDDD Lead Free and Green Devices Available (RoHSCompliant)
sm4401psk.pdf
SM4401PSK P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD -40V/-16.7A,RDS(ON)= 8.5m (max.) @ VGS=-20VSRDS(ON)= 10m (max.) @ VGS=-10VSSRDS(ON)= 16m (max.) @ VGS=-4.5VGTop View of SOP-8 Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)DDDD HBM ESD protection level pass 8KVNote : The diode connected betw
2n4401.pdf
SEMICONDUCTOR2N4401TECHNICAL DATAGeneral Purpose TransistorORDERING INFORMATIONDevice Marking Shipping32N4401 2X 3000/Tape & Reel21MAXIMUM RATINGSSOT23Rating Symbol Value UnitCollectorEmitter Voltage V 40 VdcCEOCollectorBase Voltage V 60 VdcCBOEmitterBase Voltage V 6.0 VdcEBO3COLLECTORCollector Current Continuous I 600 mAdcC1BASE
kmbt4401.pdf
SMD Type TransistorsNPN Transistors MMBT4401 (KMBT4401)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Ideal for Medium Power Amplification and Switching Complementary PNP Type Available (MMBT4403)1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitColle
kzt4401.pdf
SMD Type TransistorsNPN TransistorsPZT4401 (KZT4401)Unit:mmSOT-2236.500.23.000.14 Features Low Voltage and Low Current Linear Amplifier and Switch Applications 1 2 3 Complementary to PZT44030.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rati
2n4401.pdf
SMD Type TransistorsNPN Transistors2N4401TO-92Unit: mm+0.254.58 0.15 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=40V0.46 0.10+0.101.27TYP 1.27TYP 0.38 0.051 2 3[1.27 0.20] [1.27 0.20]3.60 0.201. Emitter2. Base(R2.29)3. Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector
mmst4401.pdf
SMD Type TransistorsNPN TransistorsMMST4401 (KMST4401) Features Small Surface Mount Package Complementary to MMST44031.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Col
pzt4401.pdf
SMD Type TransistorsNPN TransistorsPZT4401 (KZT4401)Unit:mmSOT-2236.500.23.000.14 Features Low Voltage and Low Current Linear Amplifier and Switch Applications 1 2 3 Complementary to PZT44030.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rati
mmbt4401.pdf
SMD Type TransistorsNPN Transistors MMBT4401 (KMBT4401)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Ideal for Medium Power Amplification and Switching Complementary PNP Type Available (MMBT4403)1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitColle
kmst4401.pdf
SMD Type TransistorsNPN TransistorsMMST4401 (KMST4401) Features Small Surface Mount Package Complementary to MMST44031.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Col
mmbt4401.pdf
MMBT4401NPN GENERAL PURPOSE SWITCHING TRANSISTORPOWER40 Volt 225 mWattVOLTAGEFEATURES0.120(3.04) NPN epitaxial silicon, planar design0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive0.056(1.40) Green molding compound as per IEC61249 Std. . 0.047(1.20) (Halogen Free)0
mmdt4401.pdf
MMDT4401DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTORPOWER 225 mWattVOLTAGE 40 VoltFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE =40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-363, Plastic Te
cht4401wgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT4401WGPSURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* Low current (Max.=600mA). * Suitable for high packing density.* Low voltage (Max.=40V) .* High sa
cht4401gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT4401GPSURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURESOT-23* Small flat package. ( SOT-23 )* Low current (Max.=600mA). * Suitable for high packing density.* Low voltage (Max.=40V) .* High saturation current capab
cht4401tgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT4401TGPSURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURE SC-75/SOT-416* Small surface mounting type. (SC-75/SOT-416)* Low current (Max.=600mA). * Suitable for high packing density.0.10.20.05* Low voltage (Max.=40
cht4401sgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHT4401SGPSURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* Low current (Max.=600mA). * Suitable for high packing density.(1) (6)* Low voltage (Max.=40V) .
mmbt4401-g.pdf
General Purpose TransistorMMBT4401-G (NPN)RoHS DeviceFeaturesSOT-23 -Switching Transistor0.118(3.00)0.110(2.80)30.055(1.40)Circuit Diagram 0.047(1.20)1 20.079(2.00)0.071(1.80)Collector30.006(0.15)0.003(0.08)0.041(1.05)0.100(2.55)10.035(0.90)Base 0.089(2.25)20.004(0.10) maxEmitter0.020(0.50)0.020(0.50) 0.012(0.30)0.012(0.30) Dimension
dmbt4401.pdf
DC COMPONENTS CO., LTD.DMBT4401DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose switching and amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85)
elm34401aa.pdf
Single P-channel MOSFETELM34401AA-NGeneral description Features ELM34401AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)
gsm4401s.pdf
GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited
3dg4401.pdf
2N4401(3DG4401) NPN /SILICON NPN TRANSISTOR : I 500mA CPurpose: Medium power amplifier and switch requiring collector currents up to 500 mA. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625
shd724401.pdf
SENSITRONSHD724401 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1006, REV. - Formerly part number SHSMG1009 600 VOLT, 40 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage BVCES 600 - - VIC
mmbt4401.pdf
RUMW UMW MMBT4401SOT-23 Plastic-Encapsulate TransistorsMMBT4401 TRANSISTOR (NPN) SOT-23 FEATURES Switching Transistor MARKING:2X 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 60
mmbt4401.pdf
SOT-23 Plastic-Encapsulate TransistorsFormosa MSMMBT4401 TRANSISTOR (NPN) FEATURES Switching Transistor SOT23 MARKING:2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 1. BASE VEBO Emitter-Base Voltage 6 V 2. EMITTER IC Collector Current 600 mA 3. COLLECTOR PC
mmbt4401.pdf
MMBT4401 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )SOT- 23Features Switching Transistor Marking: 2XSymbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 40 V CEOCV Emitter-Base Voltage 6 V EBOI Collector Current 600 mA CP Collector Power Dissipation 300 mW CRJA Thermal Resistance From Junction T
tmpt2221a tmpt2222 tmpt2222a tmpt2484 tmpt3903 tmpt3904 tmpt4124 tmpt4401 tmpt5088 tmpt5089 tmpt5550.pdf
2n4265 2n4400 2n4401 2n4402 2n4403 2n4409 2n4410 2n4424 2n4425 2n4951 2n4952 2n4953 2n4954 2n5087 2n5088 2n5089.pdf
mmbt4401.pdf
MMBT4401NPN Silicon Epitaxial Planar Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available: MMBT4403. Ideal for medium power amplification and switching. APPLICATIONS General purpose application, switching application. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage V
mmbt4401.pdf
MMBT4401TRANSISTOR (NPN) FEATURES SOT-23 Switching transistor MARKING MMBT4401=2X 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units3. COLLECTOR VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0
mmbt4401.pdf
www.msksemi.comMMBT4401Semiconductor CompianceSemiconductor CompianceFEATURES Switching TransistorMARKING:2X SOT23 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collect
mmbt4401.pdf
MMBT4401 NPN Transistor Features For Switching and AF Amplifer Applications. Silicon Epitaxial Chip.SOT-23 (TO-236) 1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings (T = 25) AParameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current I 600 mA CPower Dissipation 1
mmbt4401.pdf
Jingdao Microelectronics co.LTD MMBT4401MMBT4401SOT-23NPN TRANSISTOR3FEATURES Switching Transistor 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 60 V2.EMITTERCollectorEmitter Voltage VCEO 40 V3.COLLECTOREmitterBase Voltage VEBO 6 V
mmdt4401.pdf
MMDT4401SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) DUAL TRANSISTOR (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and SwitchingMRKING:K2X Maximum Ratings (Ta = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitt
mmbt4401.pdf
MMBT4401 SOT-23 NPN Transistors3 Features Ideal for Medium Power Amplification and Switching2 1.Base Complementary PNP Type Available (MMBT4403)2.Emitter1 3.Collector Simplified outline(SOT-23) MarkingMarking 2X Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-base voltage VCBO 60 VCollector-emitter voltage VCEO
mmbt4401l mmbt4401h.pdf
MMBT4401 TRANSI STOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBT4403 Collector Current: Ic=0.6A Switching TransistorMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBO 60 VCollector-Base VoltageVCEO 40 VCollector-Emitter VoltageVEBO 6 VEmitter-Base VoltageIC 600 mAC
mmbt4401.pdf
MMBT3904MMBT4401AO3400SI2305MMBT4401 TRANSISTOR ( NPN) FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403) Ideal for Medium Power Amplification and SwitchingSOT-23 1BASE 2EMITTER 3COLLECTOR MARKING: 2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base VoltageVCBO 60
si4401bdy-t1.pdf
SI4401BDY-T1www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD
si4401ddy-t1-ge3.pdf
SI4401DDY-T1-GE3www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8G
mmst4401.pdf
RoHS RoHSCOMPLIANT COMPLIANTMMST4401 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking: K3X Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 60 Collector-Emitter Voltage VCEO V 40 Emitter-Base Voltage VEBO V 6 Collec
mmbt4401q.pdf
RoHS RoHSCOMPLIANT COMPLIANTMMBT4401Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case: SOT-23 Terminals: Tin plated leads,
mmbt4401.pdf
RoHS RoHSCOMPLIANT COMPLIANTMMBT4401 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: 2X Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 60 Collector
mmdt4401.pdf
RoHS COMPLIANT MMDT4401Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K2X Equivalent circuit 1 / 5 S-S3078 Yangzhou
mmbt4401.pdf
MMBT4401 MMBT4401 SOT-23 Plastic-Encapsulate Switching Transistors (NPN) General description SOT-23 Plastic-Encapsulate Switching Transistors (NPN) FEATURES Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT4401 2X Maximum Ratings & The
mmbt4401.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT4401 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 40 Vdc-Collector-Base VoltageVCBO 60 Vdc-Emitter-Base VoltageVEBO6.0 Vdc-
mmbt4401.pdf
MMBT4401NPN GENERAL PURPOSE SWITCHING TRANSISTOR60Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V.Collector current IC=0.6A.ansition frequency fT>250MHz @ TrIC=20mAdc, VCE=20Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: So
mmbt4401.pdf
MMBT4401BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBT4403 Switching Transistor Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base V
vs4401ath.pdf
VS4401ATH40V/130A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.4 m Enhancement modeI D(Silicon Limited) 400 A Very low on-resistanceI D(Package Limited) 130 A Fast Switching and High efficiencyTO-220AB 100% Avalanche testPart ID Package Type Marking PackingVS4401ATH TO-220AB 4401ATH 50pcs/TubeMaximum ratings, at TA =25C, u
vs4401amh.pdf
VS4401AMH40V/130A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.4 m Enhancement modeI D(Wire bond Limited) 130 A Very low on-resistance Fast Switching and High efficiencyTO-263 100% Avalanche testPart ID Package Type Marking PackingVS4401AMH TO-263 4401AMH 800pcs/ReelMaximum ratings, at TA =25C, unless otherwise specifiedSy
vs4401akh.pdf
VS4401AKH40V/260A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 0.85 m Enhancement modeI D(Wire bond Limited) 260 A Ultra low RDS(on) to minimize conduction losses VitoMOS TechnologyTOLL 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking PackingVS4401AKH TOLL 4401AKH 2000PCS/ReelMaximum ratings, at TA =25C,
mmbt4401.pdf
Features ASOT-23 CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.8
hmbt4401.pdf
HMBT4401NPN-TRANSISTORNPN, 600mA, 40V NPN NPN Switching Transistor SMDHMBT4401HMBT4401LT1NPN, BECExcellent hFE linearityGeneral Purpose TransistorsLow noiseComplementary to HMBT4403Transistor Polarity: NPNMMBT4401Transistor pinout: BEC
2n4401.pdf
isc Silicon NPN Power Transistor 2N4401DESCRIPTIONWith TO-92 packagingVery high DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emi
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F