4401 Todos los transistores

 

4401 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 4401
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6.1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.046 Ohm
   Paquete / Cubierta: SOP8

 Búsqueda de reemplazo de MOSFET 4401

 

4401 Datasheet (PDF)

 ..1. Size:416K  shenzhen
4401.pdf

4401
4401

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 44014401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4401 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), low gate charge and ID = -6.1 Aoperation with gate voltages as low as 2.5V. This RDS(ON)

 0.2. Size:303K  motorola
2n4400 2n4401.pdf

4401
4401

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4400/DGeneral Purpose Transistors2N4400NPN Silicon*2N4401*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage

 0.3. Size:301K  motorola
mmbt4401.pdf

4401
4401

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT4401LT1/DSwitching TransistorMMBT4401LT1NPN SiliconMotorola Preferred DeviceCOLLECTOR31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 6.

 0.4. Size:124K  philips
pmbt4401.pdf

4401
4401

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT4401NPN switching transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetNPN switching transistor PMBT4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Industrial

 0.5. Size:148K  philips
pxt4401.pdf

4401
4401

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PXT4401NPN switching transistorProduct data sheet 2004 Nov 22Supersedes data of 1999 Apr 14 NXP Semiconductors Product data sheetNPN switching transistor PXT4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 collectorAPPLICATIONS3 base Switch

 0.6. Size:52K  philips
pmst4401 3.pdf

4401
4401

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187PMST4401NPN switching transistor1999 Apr 22Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor PMST4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Gen

 0.7. Size:52K  philips
2n4401 3.pdf

4401
4401

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N4401NPN switching transistor1999 Apr 23Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor 2N4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 collector2 baseAPPLICATIONS3 emitter Industr

 0.8. Size:124K  philips
pmst4401.pdf

4401
4401

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D187PMST4401NPN switching transistorProduct data sheet 1999 Apr 22Supersedes data of 1997 May 07 NXP Semiconductors Product data sheetNPN switching transistor PMST4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector General p

 0.9. Size:123K  philips
pzt4401.pdf

4401
4401

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageM3D087PZT4401NPN switching transistorProduct data sheet 1999 May 10NXP Semiconductors Product data sheetNPN switching transistor PZT4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage.1 base2, 4 collectorAPPLICATIONS3 emitter Switching and linear amplification in industrial

 0.10. Size:52K  philips
pmbt4401 3.pdf

4401
4401

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT4401NPN switching transistor1999 Apr 15Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor PMBT4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Ind

 0.11. Size:53K  philips
pzt4401 1.pdf

4401
4401

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PZT4401NPN switching transistor1999 May 10Product specificationPhilips Semiconductors Product specificationNPN switching transistor PZT4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage.1 base2, 4 collectorAPPLICATIONS3 emitter Switching and linear amplificationin ind

 0.12. Size:51K  philips
pxt4401 3.pdf

4401
4401

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PXT4401NPN switching transistor1999 Apr 14Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor PXT4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 collectorAPPLICATIONS3 base

 0.13. Size:119K  sanyo
2sc4401.pdf

4401
4401

Ordering number:EN2754NPN Epitaxial Planar Silicon Transistor2SC4401VHF/UHF Mixer, Local Oscillator,Low-Voltage Amplifier ApplicationsApplications Package Dimensions VHF/UHF MIX/OSC, low-voltage high-frequencyunit:mmamplifiers.2059B[2SC4401]0.3Features0.15 Low-voltage operation3: fT=3.0GHz typ (VCE=3V)0~0.1: MAG=11dB typ (VCE=3V, IC=3mA): NF=3.0dB typ

 0.14. Size:28K  sanyo
ec4401c.pdf

4401
4401

Ordering number : ENN7015EC4401CN-Channel Silicon MOSFETEC4401CSmall Signal Switch and Interface ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2197 2.5V drive.[EC4401C]0.50.2 0.20.053 42 1(Bottom view)0.05 1 : Gate2 : Source3 : Drain4 : Drain0.8SANYO : E-CSP1008-4SpecificationsAbsolute Maxim

 0.15. Size:162K  fairchild semi
mmbt4401k.pdf

4401
4401

November 2006MMBT4401KtmNPN Epitaxial Silicon TransistorSwitching TransistorMarking32XK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Dissipation 3

 0.16. Size:55K  fairchild semi
kst4401.pdf

4401
4401

KST44013Switching Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Dissipation 350 mWTSTG Storage Temperature 150

 0.17. Size:92K  fairchild semi
2n4401 mmbt4401.pdf

4401
4401

2N4401 MMBT4401CEC TO-92BSOT-23BEMark: 2XNPN General Pupose AmplifierThis device is designed for use as a medium power amplifier andswitch requiring collector currents up to 500 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 6.0

 0.18. Size:331K  nxp
pmbt4401.pdf

4401
4401

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.19. Size:364K  nxp
pxt4401.pdf

4401
4401

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.20. Size:318K  nxp
pmcm4401vne.pdf

4401
4401

PMCM4401VNE12V, N-channel Trench MOSFET24 July 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc

 0.21. Size:331K  nxp
pmst4401.pdf

4401
4401

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.22. Size:327K  nxp
pzt4401.pdf

4401
4401

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 0.23. Size:317K  nxp
pmcm4401vpe.pdf

4401
4401

PMCM4401VPE12 V, P-channel Trench MOSFET29 July 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Dis

 0.24. Size:255K  nxp
pmbt4401ys.pdf

4401
4401

PMBT4401YS40 V, 600 mA, double NPN switching transistor2 July 2015 Product data sheet1. General descriptionDouble NPN switching transistor in a very small SOT363 (TSSOP6) Surface-MountedDevice (SMD) plastic package.Double PNP complement: PMBT4403YS2. Features and benefits Double general-purpose switching transistor High current (max. 600 mA) Voltage max. 40 V A

 0.25. Size:263K  nxp
pmcm4401une.pdf

4401
4401

PMCM4401UNE20 V, N-channel Trench MOSFET29 May 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discha

 0.26. Size:715K  nxp
pmcm4401upe.pdf

4401
4401

PMCM4401UPE20 V, P-channel Trench MOSFET7 October 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic D

 0.27. Size:48K  samsung
2n4400-2n4401.pdf

4401
4401

2N4400/4401 NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 VCollector Current IC 600 mACollector Dissipation PC 6

 0.28. Size:91K  rohm
umt4401 sst4401 mmst4401 2n4401.pdf

4401
4401

UMT4401 / SST4401 / MMST4401 / 2N4401TransistorsNPN Medium Power Transistor(Switching)UMT4401 / SST4401 / MMST4401 / 2N4401 External dimensions (Units : mm) Features2.00.2UMT44011.30.1 0.90.11) BVCEO>40V (IC=1mA)0.65 0.65 0.2 0.70.1(1) (2)2) Complements the UMT4403 / SST4403 / MMST44030~0.1/ PN4403.(3)(1) Emitter(2) Base0.3+0.1 0.150.05ROHM : UM

 0.29. Size:1824K  rohm
sst4401 umt4401u3.pdf

4401
4401

SST4401 / UMT4401U3DatasheetNPN Medium Power Transistor(Switching)lOutlinelParameter Value SOT-23 SOT-323VCEO40VIC600mA SST4401 UMT4401U3(SST3) (UMT3)lFeaturesl1)BVCEO=40V(Min.) ; at IC=1mAlInner circuitl2)Complements the SST4403/UMT4403U3.lApplicationlAUDIO FREQUENCY SMALL SIGNAL AMPLIFIERlPackaging specificationslBasicPackag

 0.30. Size:89K  rohm
umt4401.pdf

4401
4401

UMT4401 / SST4401 / MMST4401 / 2N4401TransistorsNPN Medium Power Transistor(Switching)UMT4401 / SST4401 / MMST4401 / 2N4401 External dimensions (Units : mm) Features2.00.2UMT44011.30.1 0.90.11) BVCEO>40V (IC=1mA)0.65 0.65 0.2 0.70.1(1) (2)2) Complements the UMT4403 / SST4403 / MMST44030~0.1/ PN4403.(3)(1) Emitter(2) Base0.3+0.1 0.150.05ROHM : UM

 0.31. Size:98K  rohm
sst4401 mmst4401.pdf

4401
4401

SST4401 / MMST4401 Transistors NPN Medium Power Transistor (Switching) SST4401 / MMST4401 Features Dimensions (Unit : mm) 1) BVCEO>40V (IC=1mA) SST44012) Complements the SST4403 / MMST4403. Package, marking, and packaging specifications (1) Emitter(2) BasePart No. SST4401 MMST4401ROHM : SST3 (3) CollectorPackaging type SST3 SMT3Marking R2X R2XMMST4401Code T1

 0.32. Size:246K  vishay
si4401bd.pdf

4401
4401

Si4401BDYVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.014 at VGS = - 10 V - 10.5 TrenchFET Power MOSFET- 40 400.021 at VGS = - 4.5 V - 8.7 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8S1 8 D SS D2 7S3 6 DGG D4

 0.33. Size:248K  vishay
si4401bdy.pdf

4401
4401

Si4401BDYVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.014 at VGS = - 10 V - 10.5 TrenchFET Power MOSFET- 40 400.021 at VGS = - 4.5 V - 8.7 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8S1 8 D SS D2 7S3 6 DGG D4

 0.34. Size:251K  vishay
si4401ddy.pdf

4401
4401

Si4401DDYVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.015 at VGS = - 10 V - 16.1 TrenchFET Power MOSFET- 40 33 nC0.022 at VGS = - 4.5 V - 13.3 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

 0.35. Size:245K  vishay
si4401dy.pdf

4401
4401

Si4401DYVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0155 at VGS = - 10 V - 10.5 TrenchFET Power MOSFETs- 400.0225 at VGS = - 4.5 V - 8.7S SO-8 SD1 8 S D 2 7 G SD3 6 G D 4 5 Top View D Ordering Information: Si4401DY-T1-E3 (Lead (Pb

 0.36. Size:248K  vishay
si4401dd.pdf

4401
4401

Si4401DDYVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.015 at VGS = - 10 V - 16.1 TrenchFET Power MOSFET- 40 33 nC0.022 at VGS = - 4.5 V - 13.3 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

 0.37. Size:250K  vishay
sq4401ey.pdf

4401
4401

SQ4401EYwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.014 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.023 AEC-Q101 QualifiedID (A) - 17.3 100 % Rg and UIS TestedConfiguration Single Complia

 0.38. Size:250K  vishay
sq4401dy.pdf

4401
4401

SQ4401DYwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 150 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.014 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.023 AEC-Q101 QualifiedID (A) - 15.8 100 % Rg and UIS TestedConfiguration Single Complia

 0.39. Size:63K  central
2n4400 2n4401.pdf

4401

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 0.40. Size:343K  central
cmut4401.pdf

4401
4401

CMUT4401 NPNCMUT4403 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMUT4401 and SILICON TRANSISTORSCMUT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications.MARKIN

 0.41. Size:324K  central
cmpt4401 cmpt4403.pdf

4401
4401

CMPT4401 NPNCMPT4403 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMPT4401 and SILICON TRANSISTORSCMPT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications. MARKING CODES: CMP

 0.42. Size:134K  diodes
mmst4401.pdf

4401
4401

MMST4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Type Available (MMST4403) Dim Min Max C Ultra-Small Surface Mount Package A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B CB 1.15 1.35 "Green" Device (Note 3 and 4) C 2.00 2.20 B EMechanical Data GD 0.65 Nominal C

 0.43. Size:29K  diodes
fmmt4400 fmmt4401.pdf

4401
4401

SOT23 NPN SILICON PLANAR400 FMMT4400GENERAL PURPOSE TRANSISTORS401 FMMT4401ISSUE 4 FEBRUARY 1997 E T I D T I T C T VB ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) T T T I I IT DITI II i V V I I V I II V V I I V I

 0.44. Size:257K  diodes
mmbt4401.pdf

4401
4401

MMBT4401 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case material: molded Plastic Green Compound UL Flammability Rating 94V-0 Complementary PNP Type: MMBT4403 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Moisture Sensiti

 0.45. Size:172K  diodes
mmdt4401.pdf

4401
4401

MMDT4401 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-363 Ideal for Low Power Amplification and Switching C2 B1 E1Dim Min Max Ultra-Small Surface Mount Package A 0.10 0.30 Qualified to AEC-Q101 Standards for High Reliability CBB 1.15 1.35 Lead Free/RoHS Compliant (Note 3) E2 B2 C1 C 2.00 2.20

 0.46. Size:176K  diodes
mmbt4401t.pdf

4401
4401

MMBT4401T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT4403T) CDim Min Max Typ Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A 0.15 0.30 0.22TOP VIEW B CB 0.75 0.85 0.80B EMechanical Data C 1.45 1.75 1.60G Case: SOT-523 D 0.50

 0.47. Size:212K  mcc
2n4401.pdf

4401
4401

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2N4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 600mWatts of Power DissipationPurpose Amplifier Through Hole Package Epoxy meet

 0.48. Size:186K  mcc
mmst4401.pdf

4401
4401

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMST4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Power dissipation: 200mW (Tamb=25 )NPN Small Signal Collector current: 0.6A Marking : K3X Transistors Operating and Storage junction temperature range -55 to + 150 Lead Free Finish/RoHS Co

 0.49. Size:349K  mcc
mmdt4401 sot-363.pdf

4401
4401

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Transistors

 0.50. Size:184K  mcc
mmbt4401.pdf

4401
4401

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Surface Mount SOT-23 Package Capable of 350mWatts of Power DissipationNPN General Operating and Storage Junction Temperatures: -55 to 150 Purpose Amplifier IC=600mA Marking:2X/M4A Lead Fre

 0.51. Size:859K  mcc
mmdt4401.pdf

4401
4401

MMDT4401Features Epitaxial Planar Die Construction Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Dual NPN Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Otherwise Spec

 0.52. Size:62K  onsemi
nvjd4401n.pdf

4401
4401

NTJD4401N, NVJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant

 0.53. Size:195K  onsemi
2n4401.pdf

4401
4401

2N4401General PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO 40 Vdc1Collector - Base Voltage VCBO 60 VdcEMITTEREmitter - Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 600 mAdcTotal Device Dissipation PD@ TA = 25C

 0.54. Size:111K  onsemi
mmbt4401m3.pdf

4401
4401

MMBT4401M3T5GNPN Switching TransistorThe MMBT4401M3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeswitching applications and is housed in the SOT-723 surface mountpackage. This device is ideal for low-power surface mountapplications where board space is at a premium.http://onsemi.comFeatures Reduces Board SpaceCOLLECTO

 0.55. Size:155K  onsemi
mmbt4401lt1.pdf

4401
4401

MMBT4401LT1GSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 Vdc2EMITTEREmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 6

 0.56. Size:195K  onsemi
2n4401-d.pdf

4401
4401

2N4401General PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO 40 Vdc1Collector - Base Voltage VCBO 60 VdcEMITTEREmitter - Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 600 mAdcTotal Device Dissipation PD@ TA = 25C

 0.57. Size:152K  onsemi
mmbt4401lt1g.pdf

4401
4401

MMBT4401L, SMMBT4401LSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR AEC-Q101 Qualified and PPAP Capable3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements1BASEMAXIMUM RATINGS2Rating Symbol Value Uni

 0.58. Size:67K  onsemi
ntjd4401n nvjd4401n.pdf

4401
4401

NTJD4401N, NVJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant

 0.59. Size:381K  onsemi
2n4401bu 2n4401tf 2n4401tfr 2n4401ta 2n4401tar mmbt4401.pdf

4401
4401

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.60. Size:74K  onsemi
nthd4401p-d.pdf

4401
4401

NTHD4401PPower MOSFET-20 V, -3.0 A, Dual P-Channel, ChipFETtFeatures Low RDS(on) and Fast Switching Speed in a ChipFET Packagehttp://onsemi.com Leadless ChipFET Package 40% Smaller Footprint than TSOP-6 ChipFET Package with Excellent Thermal Capabilities where HeatTransfer is RequiredV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available130 mW @ -4.5 V-20 V

 0.61. Size:147K  onsemi
mmbt4401wt1g.pdf

4401
4401

MMBT4401WT1GSwitching TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO

 0.62. Size:92K  onsemi
nttd4401f nttd4401fr2.pdf

4401
4401

NTTD4401FFETKYt Power MOSFETand Schottky Diode-20 V, -3.3 A P-Channel with 20 V,1.0 A Schottky Diode, Micro8t Packagehttp://onsemi.comThe FETKY product family incorporates low RDS(on), true logic levelMOSFET PRODUCT SUMMARYMOSFETs packaged with industry leading, low forward drop, lowleakage Schottky Barrier Diodes to offer high efficiency components in V(BR)DSS RDS(on) TypID

 0.63. Size:101K  onsemi
ntjd4401n.pdf

4401
4401

NTJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)http://onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available0.29 W @ 4.5 VApplications 20 V 0.63 A0.36 W @ 2.5 V Load Power Switching Li-Ion

 0.64. Size:147K  onsemi
mmbt4401l smmbt4401l.pdf

4401
4401

MMBT4401L, SMMBT4401LSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR AEC-Q101 Qualified and PPAP Capable3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements1BASEMAXIMUM RATINGS2Rating Symbol Value Uni

 0.65. Size:180K  onsemi
mmbt4401wt1.pdf

4401
4401

MMBT4401WT1GSwitching TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector -- Emitter Voltage VCEO 40 VdcCollector -- Base Volta

 0.66. Size:207K  utc
2n4401.pdf

4401
4401

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401LHalogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 32N4401-T9

 0.67. Size:207K  utc
2n4401g.pdf

4401
4401

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401LHalogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 32N4401-T9

 0.68. Size:207K  utc
2n4401l.pdf

4401
4401

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401LHalogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 32N4401-T9

 0.69. Size:267K  utc
mmbt4401.pdf

4401
4401

UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 31 DESCRIPTION 2The UTC MMBT4401 is designed for use as a medium power SOT-23amplifier and switch requiring collector currents up to 500mA. (JEDEC TO-236)312SOT-323 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT4401G-AE3-R SOT-

 0.70. Size:274K  auk
2n4401.pdf

4401
4401

2N4401NPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application CFeatures B Low Leakage current Low collector saturation voltage enabling Elow voltage operation Complementary pair with 2N4403 TO-92 Ordering Information Type NO. Marking Package Code 2N4401 2N4401 TO-92Absolute maximum ratings T

 0.71. Size:270K  auk
mmbt4401.pdf

4401
4401

MMBT4401NPN Silicon TransistorDescriptions PIN Connection PIN Connection General purpose application Switching application Features Low Leakage current Low collector saturation voltage enabling low voltage operation Complementary pair with MMBT4403 SOT-23 Ordering Information Type NO. Marking Package Code 4P MMBT4401 SOT-23

 0.72. Size:320K  secos
2n4401.pdf

4401
4401

2N4401NPN TransistorElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant ProductTO-92A suffix of "-C" specifies halogen & lead-free4.550.2 3.50.2FeaturesPower Dissipationo MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO 60VCollector-Emitter Voltage VCEO 40VEmitter-Base Voltage

 0.73. Size:1135K  secos
pzt4401.pdf

4401
4401

PZT4401NPN Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223DescriptionThe PZT4401 is designed for general purpose switching and amplifier applications.Features*High Power Dissipation: 1500mW at 25 oC*High DC Current Gain: 100~300 at 150mAMillimeterMillimeter*Complementary to PZT4403 REF. REF. Min. Max. Min. Max. A 6.70

 0.74. Size:298K  secos
mmbt4401w.pdf

4401
4401

MMBT4401WNPN SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductASOT-323LCOLLECTOR Dim Min Max3A 1.800 2.200STop ViewBB 1.150 1.35031C 0.800 1.000BASEV GD 0.300 0.4001G 1.200 1.40022CH 0.000 0.100EMITTERH J 0.100 0.250JDKK 0.350 0.500L 0.590 0.720S 2.000 2.400MAXIMUM RATINGSV 0.280 0.420Rating Symbo

 0.75. Size:951K  secos
mmbt4401.pdf

4401
4401

MMBT4401NPN SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeACOLLECTORSOT-23L3Dim Min Max33A 2.800 3.040STop View1 B11 2 B 1.200 1.400BASE2C 0.890 1.110V GD 0.370 0.5002EMITTERG 1.780 2.040CH 0.013 0.100J 0.085 0.177HJDKK 0.450 0.600L 0.890 1.020MAXIM

 0.76. Size:489K  secos
mmdt4401.pdf

4401
4401

MMDT4401NPN Plastic-EncapsulateElektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363* Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REFPower Dissipation. (0.525)REFO PCM : 0.2 W (Temp.=25 C) .053(1.35).096(2.45).045(1.15).085(2.15)Collector Current.018(0.46).010(0.26)ICM : 0.6 A.014(0.35).006(0.15)C B E.006(0.

 0.77. Size:168K  cdil
cmbt4401.pdf

4401
4401

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT4401SILICON PLANAR EPITAXIAL TRANSISTORNPN transistorMarkingPACKAGE OUTLINE DETAILSCMBT4401 = 2XALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectoremitter voltage VCEO max. 40 VC

 0.78. Size:633K  jiangsu
2n4401.pdf

4401
4401

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Value Unit Parameter 1.EMILTTER Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 V2.BASE VEBO Emitter-Base Voltage 6 V 3. COLLECTOR Collect

 0.79. Size:762K  jiangsu
mmst4401.pdf

4401
4401

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsMMST4401 TRANSISTOR (NPN)SOT323 FEATURES Complementary to MMST4403 Small Surface Mount PackageMARKING: K3XMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit 2. EMITTERV Collector-Base Voltage 60 V CBO3. COLLECTORV Collector-Emitter Vo

 0.80. Size:686K  jiangsu
mmbt4401.pdf

4401
4401

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR (NPN) SOT23 FEATURES Switching Transistor MARKING:2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emitter-Base Vol

 0.81. Size:1338K  jiangsu
mmdt4401.pdf

4401
4401

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT4401 DUAL TRANSISTOR (NPN+NPN) DUAL TRANSISTOR (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2X Maximum Ratings (Ta = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-B

 0.82. Size:520K  kec
2n4401sc.pdf

4401
4401

SEMICONDUCTOR 2N4401SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LFEATURES Complementary to the 2N4403SCDIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90J 0.10K 0.00 ~ 0.10L 0.55M 0.20 MINMAXIMUM RATING (Ta=25)N 1.00+0.20/-0.10CHARAC

 0.83. Size:39K  kec
kn4400s kn4401s.pdf

4401
4401

SEMICONDUCTOR KN4400S/4401STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LDIM MILLIMETERS_+A 2.93 0.20FEATURES B 1.30+0.20/-0.15C 1.30 MAXComplementary to the KN4402S/4403S 23 D 0.40+0.15/-0.05E 2.40+0.30/-0.20Suffix U : Qualified to AEC-Q101.1G 1.90ex) KN4401S-RTK/HU H 0.95J 0.13+0.10/-0.05K 0

 0.84. Size:68K  kec
kn4400 kn4401.pdf

4401
4401

SEMICONDUCTOR KN4400/4401TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B C Complementary to KN4402/4403.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25 )C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 60 VG 0.85H 0.45VCEO _Collector-Emitter Vol

 0.85. Size:109K  zovie
mmbt4401gh.pdf

4401
4401

Zowie Technology CorporationSwitching TransistorNPN SiliconLead free productHalogen-free typeCOLLECTOR33BASE11MMBT4401GH22EMITTERSOT-23MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSCharacteri

 0.86. Size:360K  htsemi
mmst4401.pdf

4401

MMST4401TRANSISTOR(NPN)SOT323 FEATURES Complementary to MMST4403 Small Surface Mount Package MARKING: K3X MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 60 V CBO3. COLLECTOR V Collector-Emitter Voltage 40 V CEOV Emitter-Base Voltage 6 V EBOI Collector Current 600 mA CPC

 0.87. Size:1474K  htsemi
mmbt4401.pdf

4401
4401

MMBT4401TRANSISTOR(NPN)SOT-23 FEATURES Switching transistor 1. BASE MARKING: MMBT4401=2X 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 600 mAPC Collector Power dissipation

 0.88. Size:316K  gsme
mmbt4401.pdf

4401
4401

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM4401MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 40 Vdc-

 0.89. Size:398K  lge
2n4401.pdf

4401
4401

2N4401(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Value Units Parameter Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VVEBO Emitter-Base Voltage 6 V Collector Current -Continuous IC 600 mACollector Power dissipation PC 0.625

 0.90. Size:195K  lge
mmbt4401.pdf

4401
4401

MMBT4401 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Switching transistor MARKING: MMBT4401=2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 60 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 40 VEmitter-Base Voltage VEBO 6 V Collector Current -Continuou

 0.91. Size:234K  lge
mmdt4401.pdf

4401
4401

MMDT4401 SOT-363 Dual Transistor (NPN)SOT-363Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2X Maximum Ratings (TA = 25 unless otherwise specified) Symbol Parameter Value Units Dimensions in inches and (millimeters)VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V

 0.92. Size:1006K  wietron
2n4401.pdf

4401
4401

2N4401General Purpose TransistorsNPN SiliconTO-92 FEATURES 11. EMITTER 2 Power dissipation 32. BASE PCM : 0.625 W Tamb=25 3. COLLECTOR Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJTstg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specifie

 0.93. Size:224K  wietron
w4401dw.pdf

4401
4401

W4401DW2 13Epitaxial Planer Transistor654PNP Silicon12345 6SOT-363(SC-88)PNP+PNPMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V -50 VdcCEOCollector-Base Voltage VCBO -60 VdcEmitter-Base Voltage VEBO -6.0 VdcCollector Current-Continuous IC-150 mAdcThermal CharacteristicsCharacteristics Symbol Max Unit(1)Total Device Dissipati

 0.94. Size:520K  wietron
mmbt4401.pdf

4401
4401

MMBT4401COLLECTOR3Switching Transistor NPN Silicon311BASE22SOT-23EMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base VOltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation FR-5 Board (1)mW

 0.95. Size:422K  willas
mmbt4401lt1.pdf

4401
4401

FM120-M WILLASMMBT4401LT1THRUGeneral Purpose TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesBatch process design, excellent power dissipation offersWe declare that the material of product compliance with RoHS requirements. better reverse leakage current and thermal resistance.

 0.96. Size:528K  willas
mmbt4401wt1.pdf

4401
4401

FM120-M WILLASTHRUMMBT4401WT1General Purpose Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to We declare

 0.97. Size:43K  hsmc
hmbt4401.pdf

4401
4401

Spec. No. : HE6815HI-SINCERITYIssued Date : 1993.06.30Revised Date : 2004.09.08MICROELECTRONICS CORP.Page No. : 1/5HMBT4401NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT4401 is designed for general purpose switching and amplifierapplications.SOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature..................................................

 0.98. Size:53K  hsmc
h2n4401.pdf

4401
4401

Spec. No. : HE6215HI-SINCERITYIssued Date : 1992.09.22Revised Date : 2002.02.22MICROELECTRONICS CORP.Page No. : 1/5H2N4401NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N4401 is designed for general purpose switching and amplifier applications.FeaturesTO-92 Complementary to H2N4403 High Power Dissipation: 625 mW at 25C High DC Current Gain: 100-300 at 150

 0.99. Size:320K  analog power
am4401p.pdf

4401
4401

Analog Power AM4401PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = -10V -3.6 Low thermal impedance -150170 @ VGS = -5.5V -3.5 Fast switching speed Typical Applications: SOIC-8 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS

 0.100. Size:1272K  alfa-mos
aft4401.pdf

4401
4401

AFT4401 Alfa-MOS Technology NPN General Purpose Amplifier Features This device is designed as a general purpose amplifier and switch. Pin Description ( SOT-23 ) Ordering Information Part Ordering No. Part Marking Package Unit Quantity AFT4401T1S23RG 2X SOT-23 Tape & Reel 3000 EA Absolute Maximum Ratings (TA=25 Unless otherwise noted) Symbol Parameter Value Unit VCEO Co

 0.101. Size:261K  cystek
btc4401a3.pdf

4401
4401

Spec. No. : C203A3 Issued Date : 2007.10.16 CYStech Electronics Corp.Revised Date :2012.03.12 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC4401A3Description The BTC4401A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 0.2V(typ.) at I /I = 500mA/50mA

 0.102. Size:263K  cystek
2n4401a3.pdf

4401
4401

Spec. No. : C203A3 Issued Date : 2003.06.06 CYStech Electronics Corp.Revised Date : 2011.12.28 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor 2N4401A3Description The 2N4401A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 0.2V(typ.) at I /I = 500mA/50mA C

 0.103. Size:123K  samhop
sp4401.pdf

4401
4401

GreenProductSP4401aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12.5 @ VGS=-10VSuface Mount Package.-30V -8A18 @ VGS=-4.5V ESD Protected.D 5 4 G6 3D S7 2D SPin 1D 8 1STSON 3.3 x 3.3ABSOLUTE

 0.104. Size:285K  can-sheng
mmbt4401.pdf

4401
4401

SOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsFEATURESFEATURESFEATURESFEATURESSwitching transistorSOT-23MARKING: MMBT4401=2XMARKING: MMBT4401=2XMARKING: MMBT4401=2XMARKING: MMBT4401=2XMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise no

 0.105. Size:928K  blue-rocket-elect
2n4401.pdf

4401
4401

2N4401 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High current, Low voltage. / Applications I 500mA CMedium power amplifier and switch requiring collector currents up t

 0.106. Size:862K  blue-rocket-elect
mmbt4401.pdf

4401
4401

MMBT4401 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 1ESD 4kV, 400VMoisture Sensitivity Level: 1, ESD Rating: Human Body Model; 4 kV, Machine Model; 400 V. / Applications I 500mA

 0.107. Size:210K  semtech
2n4400 2n4401.pdf

4401
4401

2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit60 VCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO Emitter Base Vol

 0.108. Size:198K  semtech
mmbt4401.pdf

4401
4401

MMBT4401 NPN Silicon General Purpose Transistor TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current Continuous IC 600 mATotal Device Dissipation FR-5 Board 1) Ptot 300 mWOThermal Resistance Junction to Ambient RJA 417 C/W

 0.109. Size:348K  lrc
lmbt4401wt1g lmbt4401wt3g.pdf

4401
4401

LMBT4401WT1GS-LMBT4401WT1GGeneral Purpose Transistors NPN SiliconSC70(SOT-323)1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring3 Collector unique site and control change requirements; AEC-Q101 qualified and PPAP capable.1 Base2. DEVICE MARKING AND ORDERING

 0.110. Size:402K  lrc
lmbt4401dw1t1g.pdf

4401
4401

LESHAN RADIO COMPANY, LTD.DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT4401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LMBT4401DW1T1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION654Device Marking ShippingLMBT4401

 0.111. Size:586K  lrc
lmbt4401lt1g.pdf

4401
4401

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLMBT4401LT1GS-LMBT4401LT1GFEATURES1) We declare that the material of product compliant with3 RoHS requirements and Halogen Free.2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1011 Qualified and PPAP Capable.2SOT-23DEVICE MARKING AND

 0.112. Size:405K  lrc
lmbt4401wt1g.pdf

4401
4401

LESHAN RADIO COMPANY, LTD.General Purpose Transistor We declare that the material of product compliance with RoHS requirements.LMBT4401WT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT4401WT1GORDERING INFORMATIONDevice Marking Shipping3LMBT4401WT1G2X 3000/Tape & Reel

 0.113. Size:586K  lrc
lmbt4401lt1g lmbt4401lt3g.pdf

4401
4401

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLMBT4401LT1GS-LMBT4401LT1GFEATURES1) We declare that the material of product compliant with3 RoHS requirements and Halogen Free.2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1011 Qualified and PPAP Capable.2SOT-23DEVICE MARKING AND

 0.114. Size:261K  sino
sm4401pskp.pdf

4401
4401

SM4401PSKPP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-55A,DDD RDS(ON)= 8m (max.) @ VGS=-20VD RDS(ON)= 9.4m (max.) @ VGS=-10V RDS(ON)= 15m (max.) @ VGS=-4.5VGPin 1SS HBM ESD capability level of 8KV typicalSDFN5x6A-8_EP 100% UIS + Rg Tested Reliable and Rugged( 5,6,7,8 )DDDD Lead Free and Green Devices Available (RoHSCompliant)

 0.115. Size:263K  sino
sm4401psk.pdf

4401
4401

SM4401PSK P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD -40V/-16.7A,RDS(ON)= 8.5m (max.) @ VGS=-20VSRDS(ON)= 10m (max.) @ VGS=-10VSSRDS(ON)= 16m (max.) @ VGS=-4.5VGTop View of SOP-8 Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)DDDD HBM ESD protection level pass 8KVNote : The diode connected betw

 0.116. Size:317K  first silicon
2n4401.pdf

4401
4401

SEMICONDUCTOR2N4401TECHNICAL DATAGeneral Purpose TransistorORDERING INFORMATIONDevice Marking Shipping32N4401 2X 3000/Tape & Reel21MAXIMUM RATINGSSOT23Rating Symbol Value UnitCollectorEmitter Voltage V 40 VdcCEOCollectorBase Voltage V 60 VdcCBOEmitterBase Voltage V 6.0 VdcEBO3COLLECTORCollector Current Continuous I 600 mAdcC1BASE

 0.117. Size:827K  kexin
kmbt4401.pdf

4401
4401

SMD Type TransistorsNPN Transistors MMBT4401 (KMBT4401)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Ideal for Medium Power Amplification and Switching Complementary PNP Type Available (MMBT4403)1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitColle

 0.118. Size:766K  kexin
kzt4401.pdf

4401
4401

SMD Type TransistorsNPN TransistorsPZT4401 (KZT4401)Unit:mmSOT-2236.500.23.000.14 Features Low Voltage and Low Current Linear Amplifier and Switch Applications 1 2 3 Complementary to PZT44030.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rati

 0.119. Size:1500K  kexin
2n4401.pdf

4401
4401

SMD Type TransistorsNPN Transistors2N4401TO-92Unit: mm+0.254.58 0.15 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=40V0.46 0.10+0.101.27TYP 1.27TYP 0.38 0.051 2 3[1.27 0.20] [1.27 0.20]3.60 0.201. Emitter2. Base(R2.29)3. Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

 0.120. Size:396K  kexin
mmst4401.pdf

4401

SMD Type TransistorsNPN TransistorsMMST4401 (KMST4401) Features Small Surface Mount Package Complementary to MMST44031.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Col

 0.121. Size:910K  kexin
pzt4401.pdf

4401
4401

SMD Type TransistorsNPN TransistorsPZT4401 (KZT4401)Unit:mmSOT-2236.500.23.000.14 Features Low Voltage and Low Current Linear Amplifier and Switch Applications 1 2 3 Complementary to PZT44030.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rati

 0.122. Size:1817K  kexin
mmbt4401.pdf

4401
4401

SMD Type TransistorsNPN Transistors MMBT4401 (KMBT4401)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Ideal for Medium Power Amplification and Switching Complementary PNP Type Available (MMBT4403)1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitColle

 0.123. Size:279K  kexin
kmst4401.pdf

4401

SMD Type TransistorsNPN TransistorsMMST4401 (KMST4401) Features Small Surface Mount Package Complementary to MMST44031.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Col

 0.124. Size:148K  panjit
mmbt4401.pdf

4401
4401

MMBT4401NPN GENERAL PURPOSE SWITCHING TRANSISTORPOWER40 Volt 225 mWattVOLTAGEFEATURES0.120(3.04) NPN epitaxial silicon, planar design0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive0.056(1.40) Green molding compound as per IEC61249 Std. . 0.047(1.20) (Halogen Free)0

 0.125. Size:92K  panjit
mmdt4401.pdf

4401
4401

MMDT4401DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTORPOWER 225 mWattVOLTAGE 40 VoltFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE =40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-363, Plastic Te

 0.126. Size:200K  chenmko
cht4401wgp.pdf

4401
4401

CHENMKO ENTERPRISE CO.,LTDCHT4401WGPSURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* Low current (Max.=600mA). * Suitable for high packing density.* Low voltage (Max.=40V) .* High sa

 0.127. Size:132K  chenmko
cht4401gp.pdf

4401
4401

CHENMKO ENTERPRISE CO.,LTDCHT4401GPSURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURESOT-23* Small flat package. ( SOT-23 )* Low current (Max.=600mA). * Suitable for high packing density.* Low voltage (Max.=40V) .* High saturation current capab

 0.128. Size:133K  chenmko
cht4401tgp.pdf

4401
4401

CHENMKO ENTERPRISE CO.,LTDCHT4401TGPSURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURE SC-75/SOT-416* Small surface mounting type. (SC-75/SOT-416)* Low current (Max.=600mA). * Suitable for high packing density.0.10.20.05* Low voltage (Max.=40

 0.129. Size:164K  chenmko
cht4401sgp.pdf

4401
4401

CHENMKO ENTERPRISE CO.,LTDCHT4401SGPSURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* Low current (Max.=600mA). * Suitable for high packing density.(1) (6)* Low voltage (Max.=40V) .

 0.130. Size:139K  comchip
mmbt4401-g.pdf

4401
4401

General Purpose TransistorMMBT4401-G (NPN)RoHS DeviceFeaturesSOT-23 -Switching Transistor0.118(3.00)0.110(2.80)30.055(1.40)Circuit Diagram 0.047(1.20)1 20.079(2.00)0.071(1.80)Collector30.006(0.15)0.003(0.08)0.041(1.05)0.100(2.55)10.035(0.90)Base 0.089(2.25)20.004(0.10) maxEmitter0.020(0.50)0.020(0.50) 0.012(0.30)0.012(0.30) Dimension

 0.131. Size:156K  dc components
dmbt4401.pdf

4401
4401

DC COMPONENTS CO., LTD.DMBT4401DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose switching and amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85)

 0.132. Size:423K  elm
elm34401aa.pdf

4401
4401

Single P-channel MOSFETELM34401AA-NGeneral description Features ELM34401AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

 0.133. Size:1032K  globaltech semi
gsm4401s.pdf

4401
4401

GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

 0.134. Size:197K  lzg
3dg4401.pdf

4401
4401

2N4401(3DG4401) NPN /SILICON NPN TRANSISTOR : I 500mA CPurpose: Medium power amplifier and switch requiring collector currents up to 500 mA. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625

 0.135. Size:61K  sensitron
shd724401.pdf

4401
4401

SENSITRONSHD724401 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1006, REV. - Formerly part number SHSMG1009 600 VOLT, 40 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage BVCES 600 - - VIC

 0.136. Size:666K  umw-ic
mmbt4401.pdf

4401
4401

RUMW UMW MMBT4401SOT-23 Plastic-Encapsulate TransistorsMMBT4401 TRANSISTOR (NPN) SOT-23 FEATURES Switching Transistor MARKING:2X 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 60

 0.137. Size:1620K  born
mmbt4401.pdf

4401

 0.138. Size:548K  fuxinsemi
mmbt4401.pdf

4401
4401

 0.139. Size:892K  fms
mmbt4401.pdf

4401
4401

SOT-23 Plastic-Encapsulate TransistorsFormosa MSMMBT4401 TRANSISTOR (NPN) FEATURES Switching Transistor SOT23 MARKING:2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 1. BASE VEBO Emitter-Base Voltage 6 V 2. EMITTER IC Collector Current 600 mA 3. COLLECTOR PC

 0.140. Size:2354K  high diode
mmbt4401.pdf

4401
4401

MMBT4401 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )SOT- 23Features Switching Transistor Marking: 2XSymbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 40 V CEOCV Emitter-Base Voltage 6 V EBOI Collector Current 600 mA CP Collector Power Dissipation 300 mW CRJA Thermal Resistance From Junction T

 0.143. Size:745K  jsmsemi
mmbt4401.pdf

4401
4401

MMBT4401NPN Silicon Epitaxial Planar Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available: MMBT4403. Ideal for medium power amplification and switching. APPLICATIONS General purpose application, switching application. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage V

 0.144. Size:1619K  mdd
mmbt4401.pdf

4401
4401

MMBT4401TRANSISTOR (NPN) FEATURES SOT-23 Switching transistor MARKING MMBT4401=2X 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units3. COLLECTOR VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0

 0.145. Size:6088K  msksemi
mmbt4401.pdf

4401
4401

www.msksemi.comMMBT4401Semiconductor CompianceSemiconductor CompianceFEATURES Switching TransistorMARKING:2X SOT23 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collect

 0.146. Size:1009K  pjsemi
mmbt4401.pdf

4401
4401

MMBT4401 NPN Transistor Features For Switching and AF Amplifer Applications. Silicon Epitaxial Chip.SOT-23 (TO-236) 1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings (T = 25) AParameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current I 600 mA CPower Dissipation 1

 0.147. Size:939K  cn salltech
mmbt4401.pdf

4401
4401

 0.148. Size:786K  cn shandong jingdao microelectronics
mmbt4401.pdf

4401
4401

Jingdao Microelectronics co.LTD MMBT4401MMBT4401SOT-23NPN TRANSISTOR3FEATURES Switching Transistor 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 60 V2.EMITTERCollectorEmitter Voltage VCEO 40 V3.COLLECTOREmitterBase Voltage VEBO 6 V

 0.149. Size:1872K  cn shikues
mmbt4401.pdf

4401
4401

 0.150. Size:2438K  cn shikues
mmdt4401.pdf

4401
4401

MMDT4401SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) DUAL TRANSISTOR (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and SwitchingMRKING:K2X Maximum Ratings (Ta = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitt

 0.151. Size:581K  cn yfw
mmbt4401.pdf

4401
4401

MMBT4401 SOT-23 NPN Transistors3 Features Ideal for Medium Power Amplification and Switching2 1.Base Complementary PNP Type Available (MMBT4403)2.Emitter1 3.Collector Simplified outline(SOT-23) MarkingMarking 2X Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-base voltage VCBO 60 VCollector-emitter voltage VCEO

 0.152. Size:1544K  cn yongyutai
mmbt4401l mmbt4401h.pdf

4401
4401

MMBT4401 TRANSI STOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBT4403 Collector Current: Ic=0.6A Switching TransistorMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBO 60 VCollector-Base VoltageVCEO 40 VCollector-Emitter VoltageVEBO 6 VEmitter-Base VoltageIC 600 mAC

 0.153. Size:1871K  cn twgmc
mmbt4401.pdf

4401
4401

MMBT3904MMBT4401AO3400SI2305MMBT4401 TRANSISTOR ( NPN) FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403) Ideal for Medium Power Amplification and SwitchingSOT-23 1BASE 2EMITTER 3COLLECTOR MARKING: 2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base VoltageVCBO 60

 0.154. Size:874K  cn vbsemi
si4401bdy-t1.pdf

4401
4401

SI4401BDY-T1www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

 0.155. Size:827K  cn vbsemi
si4401ddy-t1-ge3.pdf

4401
4401

SI4401DDY-T1-GE3www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8G

 0.156. Size:300K  cn yangzhou yangjie elec
mmst4401.pdf

4401
4401

RoHS RoHSCOMPLIANT COMPLIANTMMST4401 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking: K3X Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 60 Collector-Emitter Voltage VCEO V 40 Emitter-Base Voltage VEBO V 6 Collec

 0.157. Size:353K  cn yangzhou yangjie elec
mmbt4401q.pdf

4401
4401

RoHS RoHSCOMPLIANT COMPLIANTMMBT4401Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case: SOT-23 Terminals: Tin plated leads,

 0.158. Size:314K  cn yangzhou yangjie elec
mmbt4401.pdf

4401
4401

RoHS RoHSCOMPLIANT COMPLIANTMMBT4401 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: 2X Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 60 Collector

 0.159. Size:369K  cn yangzhou yangjie elec
mmdt4401.pdf

4401
4401

RoHS COMPLIANT MMDT4401Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K2X Equivalent circuit 1 / 5 S-S3078 Yangzhou

 0.160. Size:495K  cn doeshare
mmbt4401.pdf

4401
4401

MMBT4401 MMBT4401 SOT-23 Plastic-Encapsulate Switching Transistors (NPN) General description SOT-23 Plastic-Encapsulate Switching Transistors (NPN) FEATURES Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT4401 2X Maximum Ratings & The

 0.161. Size:331K  cn fosan
mmbt4401.pdf

4401
4401

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT4401 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 40 Vdc-Collector-Base VoltageVCBO 60 Vdc-Emitter-Base VoltageVEBO6.0 Vdc-

 0.162. Size:2012K  cn goodwork
mmbt4401.pdf

4401
4401

MMBT4401NPN GENERAL PURPOSE SWITCHING TRANSISTOR60Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V.Collector current IC=0.6A.ansition frequency fT>250MHz @ TrIC=20mAdc, VCE=20Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: So

 0.163. Size:696K  cn hottech
mmbt4401.pdf

4401
4401

MMBT4401BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBT4403 Switching Transistor Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base V

 0.164. Size:891K  cn vgsemi
vs4401ath.pdf

4401
4401

VS4401ATH40V/130A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.4 m Enhancement modeI D(Silicon Limited) 400 A Very low on-resistanceI D(Package Limited) 130 A Fast Switching and High efficiencyTO-220AB 100% Avalanche testPart ID Package Type Marking PackingVS4401ATH TO-220AB 4401ATH 50pcs/TubeMaximum ratings, at TA =25C, u

 0.165. Size:914K  cn vgsemi
vs4401amh.pdf

4401
4401

VS4401AMH40V/130A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.4 m Enhancement modeI D(Wire bond Limited) 130 A Very low on-resistance Fast Switching and High efficiencyTO-263 100% Avalanche testPart ID Package Type Marking PackingVS4401AMH TO-263 4401AMH 800pcs/ReelMaximum ratings, at TA =25C, unless otherwise specifiedSy

 0.166. Size:1072K  cn vgsemi
vs4401akh.pdf

4401
4401

VS4401AKH40V/260A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 0.85 m Enhancement modeI D(Wire bond Limited) 260 A Ultra low RDS(on) to minimize conduction losses VitoMOS TechnologyTOLL 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking PackingVS4401AKH TOLL 4401AKH 2000PCS/ReelMaximum ratings, at TA =25C,

 0.167. Size:502K  cn xch
mmbt4401.pdf

4401
4401

Features ASOT-23 CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.8

 0.168. Size:258K  cn haohai electr
hmbt4401.pdf

4401
4401

HMBT4401NPN-TRANSISTORNPN, 600mA, 40V NPN NPN Switching Transistor SMDHMBT4401HMBT4401LT1NPN, BECExcellent hFE linearityGeneral Purpose TransistorsLow noiseComplementary to HMBT4403Transistor Polarity: NPNMMBT4401Transistor pinout: BEC

 0.169. Size:188K  inchange semiconductor
2n4401.pdf

4401
4401

isc Silicon NPN Power Transistor 2N4401DESCRIPTIONWith TO-92 packagingVery high DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emi

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top

 


4401
  4401
  4401
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F

 

 

 
Back to Top