4401 - описание и поиск аналогов

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4401 4401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AO4401 uses advanced trench technology to VDS (V) = -30V provide excellent RDS(ON), low gate charge and ID = -6.1 A operation with gate voltages as low as 2.5V. This RDS(ON)

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N4400/D General Purpose Transistors 2N4400 NPN Silicon * 2N4401 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04, STYLE 1 Rating Symbol Value Unit TO 92 (TO 226AA) Collector Emitter Voltage VCEO 40 Vdc Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT4401LT1/D Switching Transistor MMBT4401LT1 NPN Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VEBO 6.

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 PMBT4401 NPN switching transistor Product data sheet 2004 Jan 21 Supersedes data of 1999 Apr 15 NXP Semiconductors Product data sheet NPN switching transistor PMBT4401 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Industrial

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D109 PXT4401 NPN switching transistor Product data sheet 2004 Nov 22 Supersedes data of 1999 Apr 14 NXP Semiconductors Product data sheet NPN switching transistor PXT4401 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitter 2 collector APPLICATIONS 3 base Switch

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 PMST4401 NPN switching transistor 1999 Apr 22 Product specification Supersedes data of 1997 May 07 Philips Semiconductors Product specification NPN switching transistor PMST4401 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Gen

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N4401 NPN switching transistor 1999 Apr 23 Product specification Supersedes data of 1997 May 07 Philips Semiconductors Product specification NPN switching transistor 2N4401 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 collector 2 base APPLICATIONS 3 emitter Industr

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D187 PMST4401 NPN switching transistor Product data sheet 1999 Apr 22 Supersedes data of 1997 May 07 NXP Semiconductors Product data sheet NPN switching transistor PMST4401 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector General p

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT4401 NPN switching transistor Product data sheet 1999 May 10 NXP Semiconductors Product data sheet NPN switching transistor PZT4401 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage. 1 base 2, 4 collector APPLICATIONS 3 emitter Switching and linear amplification in industrial

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBT4401 NPN switching transistor 1999 Apr 15 Product specification Supersedes data of 1997 May 07 Philips Semiconductors Product specification NPN switching transistor PMBT4401 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 base 2 emitter APPLICATIONS 3 collector Ind

DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D087 PZT4401 NPN switching transistor 1999 May 10 Product specification Philips Semiconductors Product specification NPN switching transistor PZT4401 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage. 1 base 2, 4 collector APPLICATIONS 3 emitter Switching and linear amplification in ind

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PXT4401 NPN switching transistor 1999 Apr 14 Product specification Supersedes data of 1997 May 07 Philips Semiconductors Product specification NPN switching transistor PXT4401 FEATURES PINNING High current (max. 600 mA) PIN DESCRIPTION Low voltage (max. 40 V). 1 emitter 2 collector APPLICATIONS 3 base

Ordering number EN2754 NPN Epitaxial Planar Silicon Transistor 2SC4401 VHF/UHF Mixer, Local Oscillator, Low-Voltage Amplifier Applications Applications Package Dimensions VHF/UHF MIX/OSC, low-voltage high-frequency unit mm amplifiers. 2059B [2SC4401] 0.3 Features 0.15 Low-voltage operation 3 fT=3.0GHz typ (VCE=3V) 0 0.1 MAG=11dB typ (VCE=3V, IC=3mA) NF=3.0dB typ

Ordering number ENN7015 EC4401C N-Channel Silicon MOSFET EC4401C Small Signal Switch and Interface Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2197 2.5V drive. [EC4401C] 0.5 0.2 0.2 0.05 3 4 2 1 (Bottom view) 0.05 1 Gate 2 Source 3 Drain 4 Drain 0.8 SANYO E-CSP1008-4 Specifications Absolute Maxim

November 2006 MMBT4401K tm NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Dissipation 3

KST4401 3 Switching Transistor 2 SOT-23 1 1. Base 2. Emitter 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Dissipation 350 mW TSTG Storage Temperature 150

2N4401 MMBT4401 C E C TO-92 B SOT-23 B E Mark 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PMCM4401VNE 12V, N-channel Trench MOSFET 24 July 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PMCM4401VPE 12 V, P-channel Trench MOSFET 29 July 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Dis

PMBT4401YS 40 V, 600 mA, double NPN switching transistor 2 July 2015 Product data sheet 1. General description Double NPN switching transistor in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package. Double PNP complement PMBT4403YS 2. Features and benefits Double general-purpose switching transistor High current (max. 600 mA) Voltage max. 40 V A

PMCM4401UNE 20 V, N-channel Trench MOSFET 29 May 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discha

PMCM4401UPE 20 V, P-channel Trench MOSFET 7 October 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic D

2N4400/4401 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR TO-92 Collector-Emitter Voltage VCEO= 40V Collector Dissipation PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current IC 600 mA Collector Dissipation PC 6

UMT4401 / SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor (Switching) UMT4401 / SST4401 / MMST4401 / 2N4401 External dimensions (Units mm) Features 2.0 0.2 UMT4401 1.3 0.1 0.9 0.1 1) BVCEO>40V (IC=1mA) 0.65 0.65 0.2 0.7 0.1 (1) (2) 2) Complements the UMT4403 / SST4403 / MMST4403 0 0.1 / PN4403. (3) (1) Emitter (2) Base 0.3+0.1 0.15 0.05 ROHM UM

SST4401 / UMT4401U3 Datasheet NPN Medium Power Transistor (Switching) lOutline l Parameter Value SOT-23 SOT-323 VCEO 40V IC 600mA SST4401 UMT4401U3 (SST3) (UMT3) lFeatures l 1)BVCEO=40V(Min.) ; at IC=1mA lInner circuit l 2)Complements the SST4403/UMT4403U3. lApplication l AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER lPackaging specifications l Basic Packag

UMT4401 / SST4401 / MMST4401 / 2N4401 Transistors NPN Medium Power Transistor (Switching) UMT4401 / SST4401 / MMST4401 / 2N4401 External dimensions (Units mm) Features 2.0 0.2 UMT4401 1.3 0.1 0.9 0.1 1) BVCEO>40V (IC=1mA) 0.65 0.65 0.2 0.7 0.1 (1) (2) 2) Complements the UMT4403 / SST4403 / MMST4403 0 0.1 / PN4403. (3) (1) Emitter (2) Base 0.3+0.1 0.15 0.05 ROHM UM

SST4401 / MMST4401 Transistors NPN Medium Power Transistor (Switching) SST4401 / MMST4401 Features Dimensions (Unit mm) 1) BVCEO>40V (IC=1mA) SST4401 2) Complements the SST4403 / MMST4403. Package, marking, and packaging specifications (1) Emitter (2) Base Part No. SST4401 MMST4401 ROHM SST3 (3) Collector Packaging type SST3 SMT3 Marking R2X R2X MMST4401 Code T1

Si4401BDY Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.014 at VGS = - 10 V - 10.5 TrenchFET Power MOSFET - 40 40 0.021 at VGS = - 4.5 V - 8.7 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 S 1 8 D S S D 2 7 S 3 6 D G G D 4

Si4401BDY Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Qg (Typ.) Definition 0.014 at VGS = - 10 V - 10.5 TrenchFET Power MOSFET - 40 40 0.021 at VGS = - 4.5 V - 8.7 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 S 1 8 D S S D 2 7 S 3 6 D G G D 4

Si4401DDY Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.015 at VGS = - 10 V - 16.1 TrenchFET Power MOSFET - 40 33 nC 0.022 at VGS = - 4.5 V - 13.3 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS

Si4401DY Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.0155 at VGS = - 10 V - 10.5 TrenchFET Power MOSFETs - 40 0.0225 at VGS = - 4.5 V - 8.7 S SO-8 SD 1 8 S D 2 7 G SD 3 6 G D 4 5 Top View D Ordering Information Si4401DY-T1-E3 (Lead (Pb

Si4401DDY Vishay Siliconix P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.015 at VGS = - 10 V - 16.1 TrenchFET Power MOSFET - 40 33 nC 0.022 at VGS = - 4.5 V - 13.3 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS

SQ4401EY www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 40 Definition RDS(on) ( ) at VGS = - 10 V 0.014 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.023 AEC-Q101 Qualified ID (A) - 17.3 100 % Rg and UIS Tested Configuration Single Complia

SQ4401DY www.vishay.com Vishay Siliconix Automotive P-Channel 40 V (D-S) 150 C MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 40 Definition RDS(on) ( ) at VGS = - 10 V 0.014 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.023 AEC-Q101 Qualified ID (A) - 15.8 100 % Rg and UIS Tested Configuration Single Complia

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CMUT4401 NPN CMUT4403 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMUT4401 and SILICON TRANSISTORS CMUT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications. MARKIN

CMPT4401 NPN CMPT4403 PNP www.centralsemi.com SURFACE MOUNT DESCRIPTION COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT4401 and SILICON TRANSISTORS CMPT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications. MARKING CODES CMP

MMST4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Type Available (MMST4403) Dim Min Max C Ultra-Small Surface Mount Package A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B C B 1.15 1.35 "Green" Device (Note 3 and 4) C 2.00 2.20 B E Mechanical Data G D 0.65 Nominal C

SOT23 NPN SILICON PLANAR 400 FMMT4400 GENERAL PURPOSE TRANSISTORS 401 FMMT4401 ISSUE 4 FEBRUARY 1997 E T I D T I T C T V B ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25 C unless otherwise stated) T T T I I IT DITI II i V V I I V I II V V I I V I

MMBT4401 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Ideal for Medium Power Amplification and Switching Case material molded Plastic Green Compound UL Flammability Rating 94V-0 Complementary PNP Type MMBT4403 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Moisture Sensiti

MMDT4401 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-363 Ideal for Low Power Amplification and Switching C2 B1 E1 Dim Min Max Ultra-Small Surface Mount Package A 0.10 0.30 Qualified to AEC-Q101 Standards for High Reliability C B B 1.15 1.35 Lead Free/RoHS Compliant (Note 3) E2 B2 C1 C 2.00 2.20

MMBT4401T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT4403T) C Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A 0.15 0.30 0.22 TOP VIEW B C B 0.75 0.85 0.80 B E Mechanical Data C 1.45 1.75 1.60 G Case SOT-523 D 0.50

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth 2N4401 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 600mWatts of Power Dissipation Purpose Amplifier Through Hole Package Epoxy meet

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMST4401 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Power dissipation 200mW (Tamb=25 ) NPN Small Signal Collector current 0.6A Marking K3X Transistors Operating and Storage junction temperature range -55 to + 150 Lead Free Finish/RoHS Co

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMDT4401 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Transistors

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT4401 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Operating and Storage Junction Temperatures -55 to 150 Purpose Amplifier IC=600mA Marking 2X/M4A Lead Fre

MMDT4401 Features Epitaxial Planar Die Construction Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Dual NPN Epoxy Meets UL 94 V-0 Flammability Rating Plastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Transistors Maximum Ratings @ 25 C Unless Otherwise Spec

NTJD4401N, NVJD4401N Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection Features Small Footprint (2 x 2 mm) www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads) V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N 0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant

2N4401 General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO 40 Vdc 1 Collector - Base Voltage VCBO 60 Vdc EMITTER Emitter - Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation PD @ TA = 25 C

MMBT4401M3T5G NPN Switching Transistor The MMBT4401M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose switching applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http //onsemi.com Features Reduces Board Space COLLECTO

MMBT4401LT1G Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc 2 EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 6

2N4401 General Purpose Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS 2 Rating Symbol Value Unit BASE Collector - Emitter Voltage VCEO 40 Vdc 1 Collector - Base Voltage VCBO 60 Vdc EMITTER Emitter - Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 600 mAdc Total Device Dissipation PD @ TA = 25 C

MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com http //onsemi.com Compliant COLLECTOR AEC-Q101 Qualified and PPAP Capable 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Uni

NTJD4401N, NVJD4401N Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection Features Small Footprint (2 x 2 mm) www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads) V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N 0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NTHD4401P Power MOSFET -20 V, -3.0 A, Dual P-Channel, ChipFETt Features Low RDS(on) and Fast Switching Speed in a ChipFET Package http //onsemi.com Leadless ChipFET Package 40% Smaller Footprint than TSOP-6 ChipFET Package with Excellent Thermal Capabilities where Heat Transfer is Required V(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available 130 mW @ -4.5 V -20 V

MMBT4401WT1G Switching Transistor NPN Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model; 4 kV, Machine Model; 400 V COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO

NTTD4401F FETKYt Power MOSFET and Schottky Diode -20 V, -3.3 A P-Channel with 20 V, 1.0 A Schottky Diode, Micro8t Package http //onsemi.com The FETKY product family incorporates low RDS(on), true logic level MOSFET PRODUCT SUMMARY MOSFETs packaged with industry leading, low forward drop, low leakage Schottky Barrier Diodes to offer high efficiency components in V(BR)DSS RDS(on) Typ ID

NTJD4401N Small Signal MOSFET 20 V, Dual N-Channel, SC-88 ESD Protection Features Small Footprint (2 x 2 mm) http //onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads) V(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available 0.29 W @ 4.5 V Applications 20 V 0.63 A 0.36 W @ 2.5 V Load Power Switching Li-Ion

MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com http //onsemi.com Compliant COLLECTOR AEC-Q101 Qualified and PPAP Capable 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Uni

MMBT4401WT1G Switching Transistor NPN Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model; 4 kV, Machine Model; 400 V COLLECTOR These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector -- Emitter Voltage VCEO 40 Vdc Collector -- Base Volta

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free 2N4401L Halogen-free 2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 2N4401-T9

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free 2N4401L Halogen-free 2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 2N4401-T9

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free 2N4401L Halogen-free 2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 3 2N4401-T9

UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 1 DESCRIPTION 2 The UTC MMBT4401 is designed for use as a medium power SOT-23 amplifier and switch requiring collector currents up to 500mA. (JEDEC TO-236) 3 1 2 SOT-323 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT4401G-AE3-R SOT-

2N4401 NPN Silicon Transistor Descriptions PIN Connection General purpose application Switching application C Features B Low Leakage current Low collector saturation voltage enabling E low voltage operation Complementary pair with 2N4403 TO-92 Ordering Information Type NO. Marking Package Code 2N4401 2N4401 TO-92 Absolute maximum ratings T

2N4401 NPN Transistor Elektronische Bauelemente Plastic-Encapsulate Transistors RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55 0.2 3.5 0.2 Features Power Dissipation o MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage

PZT4401 NPN Transistor Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-223 Description The PZT4401 is designed for general purpose switching and amplifier applications. Features *High Power Dissipation 1500mW at 25 oC *High DC Current Gain 100 300 at 150mA Millimeter Millimeter *Complementary to PZT4403 REF. REF. Min. Max. Min. Max. A 6.70

MMBT4401W NPN Silicon Elektronische Bauelemente Switching Transistor RoHS Compliant Product A SOT-323 L COLLECTOR Dim Min Max 3 A 1.800 2.200 S Top View B B 1.150 1.350 3 1 C 0.800 1.000 BASE V G D 0.300 0.400 1 G 1.200 1.400 2 2 C H 0.000 0.100 EMITTER H J 0.100 0.250 J D K K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 MAXIMUM RATINGS V 0.280 0.420 Rating Symbo

MMBT4401 NPN Silicon Elektronische Bauelemente Switching Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A COLLECTOR SOT-23 L 3 Dim Min Max 3 3 A 2.800 3.040 S Top View 1 B 1 1 2 B 1.200 1.400 BASE 2 C 0.890 1.110 V G D 0.370 0.500 2 EMITTER G 1.780 2.040 C H 0.013 0.100 J 0.085 0.177 H J D K K 0.450 0.600 L 0.890 1.020 MAXIM

MMDT4401 NPN Plastic-Encapsulate Elektronische Bauelemente Multi-Chip Transistor RoHS Compliant Product SOT-363 * Features o .055(1.40) 8 .047(1.20) 0o .026TYP (0.65TYP) .021REF Power Dissipation. (0.525)REF O PCM 0.2 W (Temp.=25 C) .053(1.35) .096(2.45) .045(1.15) .085(2.15) Collector Current .018(0.46) .010(0.26) ICM 0.6 A .014(0.35) .006(0.15) C B E .006(0.

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBT4401 SILICON PLANAR EPITAXIAL TRANSISTOR N P N transistor Marking PACKAGE OUTLINE DETAILS CMBT4401 = 2X ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector emitter voltage VCEO max. 40 V C

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Value Unit Parameter 1.EMILTTER Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V 2.BASE VEBO Emitter-Base Voltage 6 V 3. COLLECTOR Collect

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors MMST4401 TRANSISTOR (NPN) SOT 323 FEATURES Complementary to MMST4403 Small Surface Mount Package MARKING K3X MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 60 V CBO 3. COLLECTOR V Collector-Emitter Vo

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR (NPN) SOT 23 FEATURES Switching Transistor MARKING 2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emitter-Base Vol

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT4401 DUAL TRANSISTOR (NPN+NPN) DUAL TRANSISTOR (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING K2X Maximum Ratings (Ta = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-B

SEMICONDUCTOR 2N4401SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L FEATURES Complementary to the 2N4403SC DIM MILLIMETERS _ + A 2.90 0.1 2 3 B 1.30+0.20/-0.15 C 1.30 MAX 1 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 0.10 L 0.55 M 0.20 MIN MAXIMUM RATING (Ta=25 ) N 1.00+0.20/-0.10 CHARAC

SEMICONDUCTOR KN4400S/4401S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E L B L DIM MILLIMETERS _ + A 2.93 0.20 FEATURES B 1.30+0.20/-0.15 C 1.30 MAX Complementary to the KN4402S/4403S 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 Suffix U Qualified to AEC-Q101. 1 G 1.90 ex) KN4401S-RTK/HU H 0.95 J 0.13+0.10/-0.05 K 0

SEMICONDUCTOR KN4400/4401 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. B C Complementary to KN4402/4403. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX G MAXIMUM RATING (Ta=25 ) C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage 60 V G 0.85 H 0.45 VCEO _ Collector-Emitter Vol

Zowie Technology Corporation Switching Transistor NPN Silicon Lead free product Halogen-free type COLLECTOR 3 3 BASE 1 1 MMBT4401GH 2 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteri

MMST4401 TRANSISTOR(NPN) SOT 323 FEATURES Complementary to MMST4403 Small Surface Mount Package MARKING K3X MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 60 V CBO 3. COLLECTOR V Collector-Emitter Voltage 40 V CEO V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C PC

MMBT4401 TRANSISTOR(NPN) SOT-23 FEATURES Switching transistor 1. BASE MARKING MMBT4401=2X 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 600 mA PC Collector Power dissipation

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM4401 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 40 Vdc -

2N4401(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Value Units Parameter Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V VEBO Emitter-Base Voltage 6 V Collector Current -Continuous IC 600 mA Collector Power dissipation PC 0.625

MMBT4401 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Switching transistor MARKING MMBT4401=2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 40 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuou

MMDT4401 SOT-363 Dual Transistor (NPN) SOT-363 Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING K2X Maximum Ratings (TA = 25 unless otherwise specified) Symbol Parameter Value Units Dimensions in inches and (millimeters) VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V

2N4401 General Purpose Transistors NPN Silicon TO-92 FEATURES 1 1. EMITTER 2 Power dissipation 3 2. BASE PCM 0.625 W Tamb=25 3. COLLECTOR Collector current ICM 0.6 A Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range TJ Tstg -55 to +150 ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specifie

W4401DW 2 1 3 Epitaxial Planer Transistor 6 5 4 PNP Silicon 1 2 3 4 5 6 SOT-363(SC-88) PNP+PNP Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V -50 Vdc CEO Collector-Base Voltage VCBO -60 Vdc Emitter-Base Voltage VEBO -6.0 Vdc Collector Current-Continuous IC -150 mAdc Thermal Characteristics Characteristics Symbol Max Unit (1) Total Device Dissipati

MMBT4401 COLLECTOR 3 Switching Transistor NPN Silicon 3 1 1 BASE 2 2 SOT-23 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (1) mW

FM120-M WILLAS MMBT4401LT1 THRU General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers We declare that the material of product compliance with RoHS requirements. better reverse leakage current and thermal resistance.

FM120-M WILLAS THRU MMBT4401WT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to We declare

Spec. No. HE6815 HI-SINCERITY Issued Date 1993.06.30 Revised Date 2004.09.08 MICROELECTRONICS CORP. Page No. 1/5 HMBT4401 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT4401 is designed for general purpose switching and amplifier applications. SOT-23 Absolute Maximum Ratings Maximum Temperatures Storage Temperature..................................................

Spec. No. HE6215 HI-SINCERITY Issued Date 1992.09.22 Revised Date 2002.02.22 MICROELECTRONICS CORP. Page No. 1/5 H2N4401 NPN EPITAXIAL PLANAR TRANSISTOR Description The H2N4401 is designed for general purpose switching and amplifier applications. Features TO-92 Complementary to H2N4403 High Power Dissipation 625 mW at 25 C High DC Current Gain 100-300 at 150

Analog Power AM4401P P-Channel 150-V (D-S) MOSFET PRODUCT SUMMARY Key Features rDS(on) (m ) VDS (V) ID (A) Low r trench technology DS(on) 160 @ VGS = -10V -3.6 Low thermal impedance -150 170 @ VGS = -5.5V -3.5 Fast switching speed Typical Applications SOIC-8 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS

AFT4401 Alfa-MOS Technology NPN General Purpose Amplifier Features This device is designed as a general purpose amplifier and switch. Pin Description ( SOT-23 ) Ordering Information Part Ordering No. Part Marking Package Unit Quantity AFT4401T1S23RG 2X SOT-23 Tape & Reel 3000 EA Absolute Maximum Ratings (TA=25 Unless otherwise noted) Symbol Parameter Value Unit VCEO Co

Spec. No. C203A3 Issued Date 2007.10.16 CYStech Electronics Corp. Revised Date 2012.03.12 Page No. 1/7 General Purpose NPN Epitaxial Planar Transistor BTC4401A3 Description The BTC4401A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 0.2V(typ.) at I /I = 500mA/50mA

Spec. No. C203A3 Issued Date 2003.06.06 CYStech Electronics Corp. Revised Date 2011.12.28 Page No. 1/8 General Purpose NPN Epitaxial Planar Transistor 2N4401A3 Description The 2N4401A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 0.2V(typ.) at I /I = 500mA/50mA C

Green Product SP4401 a S mHop Microelectronics C orp. Ver 1.0 P-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 12.5 @ VGS=-10V Suface Mount Package. -30V -8A 18 @ VGS=-4.5V ESD Protected. D 5 4 G 6 3 D S 7 2 D S Pin 1 D 8 1 S TSON 3.3 x 3.3 ABSOLUTE

SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES FEATURES Switching transistor SOT-23 MARKING MMBT4401=2X MARKING MMBT4401=2X MARKING MMBT4401=2X MARKING MMBT4401=2X MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise no

2N4401 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High current, Low voltage. / Applications I 500mA C Medium power amplifier and switch requiring collector currents up t

2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit 60 V Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO Emitter Base Vol

MMBT4401 NPN Silicon General Purpose Transistor TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current Continuous IC 600 mA Total Device Dissipation FR-5 Board 1) Ptot 300 mW O Thermal Resistance Junction to Ambient R JA 417 C/W

LMBT4401WT1G S-LMBT4401WT1G General Purpose Transistors NPN Silicon SC70(SOT-323) 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring 3 Collector unique site and control change requirements; AEC-Q101 qualified and PPAP capable. 1 Base 2. DEVICE MARKING AND ORDERING

LESHAN RADIO COMPANY, LTD. DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT4401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LMBT4401DW1T1G and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ORDERING INFORMATION 6 5 4 Device Marking Shipping LMBT4401

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LMBT4401LT1G S-LMBT4401LT1G FEATURES 1) We declare that the material of product compliant with 3 RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable. 2 SOT-23 DEVICE MARKING AND

LESHAN RADIO COMPANY, LTD. General Purpose Transistor We declare that the material of product compliance with RoHS requirements. LMBT4401WT1G S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. S-LMBT4401WT1G ORDERING INFORMATION Device Marking Shipping 3 LMBT4401WT1G 2X 3000/Tape & Reel

LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon LMBT4401LT1G S-LMBT4401LT1G FEATURES 1) We declare that the material of product compliant with 3 RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 1 Qualified and PPAP Capable. 2 SOT-23 DEVICE MARKING AND

SM4401PSKP P-Channel Enhancement Mode MOSFET Features Pin Description -40V/-55A, D D D RDS(ON)= 8m (max.) @ VGS=-20V D RDS(ON)= 9.4m (max.) @ VGS=-10V RDS(ON)= 15m (max.) @ VGS=-4.5V G Pin 1 S S HBM ESD capability level of 8KV typical S DFN5x6A-8_EP 100% UIS + Rg Tested Reliable and Rugged ( 5,6,7,8 ) DDDD Lead Free and Green Devices Available (RoHS Compliant)

SM4401PSK P-Channel Enhancement Mode MOSFET Features Pin Description D D D D -40V/-16.7A, RDS(ON)= 8.5m (max.) @ VGS=-20V S RDS(ON)= 10m (max.) @ VGS=-10V S S RDS(ON)= 16m (max.) @ VGS=-4.5V G Top View of SOP-8 Reliable and Rugged Lead Free and Green Devices Available ( 5,6,7,8 ) (RoHS Compliant) DDDD HBM ESD protection level pass 8KV Note The diode connected betw

SEMICONDUCTOR 2N4401 TECHNICAL DATA General Purpose Transistor ORDERING INFORMATION Device Marking Shipping 3 2N4401 2X 3000/Tape & Reel 2 1 MAXIMUM RATINGS SOT 23 Rating Symbol Value Unit Collector Emitter Voltage V 40 Vdc CEO Collector Base Voltage V 60 Vdc CBO Emitter Base Voltage V 6.0 Vdc EBO 3 COLLECTOR Collector Current Continuous I 600 mAdc C 1 BASE

SMD Type Transistors NPN Transistors MMBT4401 (KMBT4401) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Ideal for Medium Power Amplification and Switching Complementary PNP Type Available (MMBT4403) 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Colle

SMD Type Transistors NPN Transistors PZT4401 (KZT4401) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features Low Voltage and Low Current Linear Amplifier and Switch Applications 1 2 3 Complementary to PZT4403 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rati

SMD Type Transistors NPN Transistors 2N4401 TO-92 Unit mm +0.25 4.58 0.15 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=40V 0.46 0.10 +0.10 1.27TYP 1.27TYP 0.38 0.05 1 2 3 [1.27 0.20] [1.27 0.20] 3.60 0.20 1. Emitter 2. Base (R2.29) 3. Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector

SMD Type Transistors NPN Transistors MMST4401 (KMST4401) Features Small Surface Mount Package Complementary to MMST4403 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Col

SMD Type Transistors NPN Transistors PZT4401 (KZT4401) Unit mm SOT-223 6.50 0.2 3.00 0.1 4 Features Low Voltage and Low Current Linear Amplifier and Switch Applications 1 2 3 Complementary to PZT4403 0.250 2.30 (typ) Gauge Plane 1.Base 2.Collector 0.70 0.1 3.Emitter 4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rati

SMD Type Transistors NPN Transistors MMBT4401 (KMBT4401) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Ideal for Medium Power Amplification and Switching Complementary PNP Type Available (MMBT4403) 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Colle

SMD Type Transistors NPN Transistors MMST4401 (KMST4401) Features Small Surface Mount Package Complementary to MMST4403 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Col

MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR POWER 40 Volt 225 mWatt VOLTAGE FEATURES 0.120(3.04) NPN epitaxial silicon, planar design 0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive 0.056(1.40) Green molding compound as per IEC61249 Std. . 0.047(1.20) (Halogen Free) 0

MMDT4401 DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTOR POWER 225 mWatt VOLTAGE 40 Volt FEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE =40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free) MECHANICAL DATA Case SOT-363, Plastic Te

CHENMKO ENTERPRISE CO.,LTD CHT4401WGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-70/SOT-323 * Small surface mounting type. (SC-70/SOT-323) * Low current (Max.=600mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High sa

CHENMKO ENTERPRISE CO.,LTD CHT4401GP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SOT-23 * Small flat package. ( SOT-23 ) * Low current (Max.=600mA). * Suitable for high packing density. * Low voltage (Max.=40V) . * High saturation current capab

CHENMKO ENTERPRISE CO.,LTD CHT4401TGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-75/SOT-416 * Small surface mounting type. (SC-75/SOT-416) * Low current (Max.=600mA). * Suitable for high packing density. 0.1 0.2 0.05 * Low voltage (Max.=40

CHENMKO ENTERPRISE CO.,LTD CHT4401SGP SURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 Ampere APPLICATION * Telephony and proferssional communction equipment. * Other switching applications. FEATURE SC-88/SOT-363 * Small surface mounting type. (SC-88/SOT-363) * Low current (Max.=600mA). * Suitable for high packing density. (1) (6) * Low voltage (Max.=40V) .

General Purpose Transistor MMBT4401-G (NPN) RoHS Device Features SOT-23 -Switching Transistor 0.118(3.00) 0.110(2.80) 3 0.055(1.40) Circuit Diagram 0.047(1.20) 1 2 0.079(2.00) 0.071(1.80) Collector 3 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.100(2.55) 1 0.035(0.90) Base 0.089(2.25) 2 0.004(0.10) max Emitter 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimension

DC COMPONENTS CO., LTD. DMBT4401 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose switching and amplifier applications. SOT-23 .020(0.50) Pinning .012(0.30) 1 = Base 2 = Emitter 3 .063(1.60) .108(0.65) 3 = Collector .055(1.40) .089(0.25) 1 2 Absolute Maximum Ratings(TA=25oC) .045(1.15) .034(0.85)

Single P-channel MOSFET ELM34401AA-N General description Features ELM34401AA-N uses advanced trench technology to Vds=-30V provide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13m @VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16m @VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

2N4401(3DG4401) NPN /SILICON NPN TRANSISTOR I 500mA C Purpose Medium power amplifier and switch requiring collector currents up to 500 mA. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 60 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625

SENSITRON SHD724401 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1006, REV. - Formerly part number SHSMG1009 600 VOLT, 40 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage BVCES 600 - - V IC

R UMW UMW MMBT4401 SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR (NPN) SOT-23 FEATURES Switching Transistor MARKING 2X 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 60

SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT4401 TRANSISTOR (NPN) FEATURES Switching Transistor SOT 23 MARKING 2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 1. BASE VEBO Emitter-Base Voltage 6 V 2. EMITTER IC Collector Current 600 mA 3. COLLECTOR PC

MMBT4401 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) SOT- 23 Features Switching Transistor Marking 2X Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 40 V CEO C V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C P Collector Power Dissipation 300 mW C R JA Thermal Resistance From Junction T

MMBT4401 NPN Silicon Epitaxial Planar Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available MMBT4403. Ideal for medium power amplification and switching. APPLICATIONS General purpose application, switching application. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage V

MMBT4401 TRANSISTOR (NPN) FEATURES SOT-23 Switching transistor MARKING MMBT4401=2X 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units 3. COLLECTOR VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0

www.msksemi.com MMBT4401 Semiconductor Compiance Semiconductor Compiance FEATURES Switching Transistor MARKING 2X SOT 23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collect

MMBT4401 NPN Transistor Features For Switching and AF Amplifer Applications. Silicon Epitaxial Chip. SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (T = 25 ) A Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current I 600 mA C Power Dissipation 1

Jingdao Microelectronics co.LTD MMBT4401 MMBT4401 SOT-23 NPN TRANSISTOR 3 FEATURES Switching Transistor 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 60 V 2.EMITTER Collector Emitter Voltage VCEO 40 V 3.COLLECTOR Emitter Base Voltage VEBO 6 V

MMDT4401 SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) DUAL TRANSISTOR (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING K2X Maximum Ratings (Ta = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitt

MMBT4401 SOT-23 NPN Transistors 3 Features Ideal for Medium Power Amplification and Switching 2 1.Base Complementary PNP Type Available (MMBT4403) 2.Emitter 1 3.Collector Simplified outline(SOT-23) Marking Marking 2X Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO

MMBT4401 TRANSI STOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to MMBT4403 Collector Current Ic=0.6A Switching Transistor MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit VCBO 60 V Collector-Base Voltage VCEO 40 V Collector-Emitter Voltage VEBO 6 V Emitter-Base Voltage IC 600 mA C

MMBT3904 MMBT4401 AO3400 SI2305 MMBT4401 TRANSISTOR ( NPN) FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403) Ideal for Medium Power Amplification and Switching SOT-23 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 60

SI4401BDY-T1 www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G SD

SI4401DDY-T1-GE3 www.VBsemi.tw P-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.010 at VGS = - 10 V - 16.1 100 % Rg Tested - 40 33 nC 0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS S Load Switch POL SO-8 G

RoHS RoHS COMPLIANT COMPLIANT MMST4401 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking K3X Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 60 Collector-Emitter Voltage VCEO V 40 Emitter-Base Voltage VEBO V 6 Collec

RoHS RoHS COMPLIANT COMPLIANT MMBT4401Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case SOT-23 Terminals Tin plated leads,

RoHS RoHS COMPLIANT COMPLIANT MMBT4401 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking 2X Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 60 Collector

RoHS COMPLIANT MMDT4401 Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage SOT-363 P Terminals Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking K2X Equivalent circuit 1 / 5 S-S3078 Yangzhou

MMBT4401 MMBT4401 SOT-23 Plastic-Encapsulate Switching Transistors (NPN) General description SOT-23 Plastic-Encapsulate Switching Transistors (NPN) FEATURES Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT4401 2X Maximum Ratings & The

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT4401 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 40 Vdc - Collector-Base Voltage VCBO 60 Vdc - Emitter-Base Voltage VEBO 6.0 Vdc -

MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 60Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Collector current IC=0.6A. ansition frequency fT>250MHz @ Tr IC=20mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals So

MMBT4401 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT4403 Switching Transistor Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base V

VS4401ATH 40V/130A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 1.4 m Enhancement mode I D(Silicon Limited) 400 A Very low on-resistance I D(Package Limited) 130 A Fast Switching and High efficiency TO-220AB 100% Avalanche test Part ID Package Type Marking Packing VS4401ATH TO-220AB 4401ATH 50pcs/Tube Maximum ratings, at TA =25 C, u

VS4401AMH 40V/130A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 1.4 m Enhancement mode I D(Wire bond Limited) 130 A Very low on-resistance Fast Switching and High efficiency TO-263 100% Avalanche test Part ID Package Type Marking Packing VS4401AMH TO-263 4401AMH 800pcs/Reel Maximum ratings, at TA =25 C, unless otherwise specified Sy

VS4401AKH 40V/260A N-Channel Advanced Power MOSFET V DS 40 V Features R DS(on),TYP@ VGS=10 V 0.85 m Enhancement mode I D(Wire bond Limited) 260 A Ultra low RDS(on) to minimize conduction losses VitoMOS Technology TOLL 100% Avalanche Tested,100% Rg Tested Part ID Package Type Marking Packing VS4401AKH TOLL 4401AKH 2000PCS/Reel Maximum ratings, at TA =25 C,

Features A SOT-23 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.8

HMBT4401 NPN-TRANSISTOR NPN, 600mA, 40V NPN NPN Switching Transistor SMD HMBT4401 HMBT4401LT1 NPN, BEC Excellent hFE linearity General Purpose Transistors Low noise Complementary to HMBT4403 Transistor Polarity NPN MMBT4401 Transistor pinout BEC

isc Silicon NPN Power Transistor 2N4401 DESCRIPTION With TO-92 packaging Very high DC current gain Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS AC-DC motor control Electronic ignition Alternator regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 60 V CBO V Collector-Emi