4401 Datasheet and Replacement

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 44014401P-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO4401 uses advanced trench technology to VDS (V) = -30Vprovide excellent RDS(ON), low gate charge and ID = -6.1 Aoperation with gate voltages as low as 2.5V. This RDS(ON)

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby 2N4400/DGeneral Purpose Transistors2N4400NPN Silicon*2N4401*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER123MAXIMUM RATINGSCASE 2904, STYLE 1Rating Symbol Value UnitTO92 (TO226AA)CollectorEmitter Voltage VCEO 40 VdcCollectorBase Voltage VCBO 60 VdcEmitterBase Voltage

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBT4401LT1/DSwitching TransistorMMBT4401LT1NPN SiliconMotorola Preferred DeviceCOLLECTOR31BASE32EMITTER1MAXIMUM RATINGS2Rating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcCASE 31808, STYLE 6SOT23 (TO236AB)CollectorBase Voltage VCBO 60 VdcEmitterBase Voltage VEBO 6.

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D088PMBT4401NPN switching transistorProduct data sheet 2004 Jan 21Supersedes data of 1999 Apr 15NXP Semiconductors Product data sheetNPN switching transistor PMBT4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Industrial

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D109PXT4401NPN switching transistorProduct data sheet 2004 Nov 22Supersedes data of 1999 Apr 14 NXP Semiconductors Product data sheetNPN switching transistor PXT4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 collectorAPPLICATIONS3 base Switch

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D187PMST4401NPN switching transistor1999 Apr 22Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor PMST4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Gen

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D1862N4401NPN switching transistor1999 Apr 23Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor 2N4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 collector2 baseAPPLICATIONS3 emitter Industr

DISCRETE SEMICONDUCTORS DATA SHEETdbook, halfpageM3D187PMST4401NPN switching transistorProduct data sheet 1999 Apr 22Supersedes data of 1997 May 07 NXP Semiconductors Product data sheetNPN switching transistor PMST4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector General p

DISCRETE SEMICONDUCTORS DATA SHEEThandbook, halfpageM3D087PZT4401NPN switching transistorProduct data sheet 1999 May 10NXP Semiconductors Product data sheetNPN switching transistor PZT4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage.1 base2, 4 collectorAPPLICATIONS3 emitter Switching and linear amplification in industrial

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBT4401NPN switching transistor1999 Apr 15Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor PMBT4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 base2 emitterAPPLICATIONS3 collector Ind

DISCRETE SEMICONDUCTORSDATA SHEEThandbook, halfpageM3D087PZT4401NPN switching transistor1999 May 10Product specificationPhilips Semiconductors Product specificationNPN switching transistor PZT4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage.1 base2, 4 collectorAPPLICATIONS3 emitter Switching and linear amplificationin ind

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D109PXT4401NPN switching transistor1999 Apr 14Product specificationSupersedes data of 1997 May 07Philips Semiconductors Product specificationNPN switching transistor PXT4401FEATURES PINNING High current (max. 600 mA)PIN DESCRIPTION Low voltage (max. 40 V).1 emitter2 collectorAPPLICATIONS3 base

Ordering number:EN2754NPN Epitaxial Planar Silicon Transistor2SC4401VHF/UHF Mixer, Local Oscillator,Low-Voltage Amplifier ApplicationsApplications Package Dimensions VHF/UHF MIX/OSC, low-voltage high-frequencyunit:mmamplifiers.2059B[2SC4401]0.3Features0.15 Low-voltage operation3: fT=3.0GHz typ (VCE=3V)0~0.1: MAG=11dB typ (VCE=3V, IC=3mA): NF=3.0dB typ

Ordering number : ENN7015EC4401CN-Channel Silicon MOSFETEC4401CSmall Signal Switch and Interface ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2197 2.5V drive.[EC4401C]0.50.2 0.20.053 42 1(Bottom view)0.05 1 : Gate2 : Source3 : Drain4 : Drain0.8SANYO : E-CSP1008-4SpecificationsAbsolute Maxim

November 2006MMBT4401KtmNPN Epitaxial Silicon TransistorSwitching TransistorMarking32XK2SOT-2311. Base 2. Emitter 3. CollectorAbsolute Maximum Ratings Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Dissipation 3

KST44013Switching Transistor2SOT-2311. Base 2. Emitter 3. CollectorNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 40 VVEBO Emitter-Base Voltage 6 VIC Collector Current 600 mAPC Collector Dissipation 350 mWTSTG Storage Temperature 150

2N4401 MMBT4401CEC TO-92BSOT-23BEMark: 2XNPN General Pupose AmplifierThis device is designed for use as a medium power amplifier andswitch requiring collector currents up to 500 mA.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 40 VVCBO Collector-Base Voltage 60 VVEBO Emitter-Base Voltage 6.0

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PMCM4401VNE12V, N-channel Trench MOSFET24 July 2015 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

PMCM4401VPE12 V, P-channel Trench MOSFET29 July 2015 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer LevelChip-Size Package (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Dis

PMBT4401YS40 V, 600 mA, double NPN switching transistor2 July 2015 Product data sheet1. General descriptionDouble NPN switching transistor in a very small SOT363 (TSSOP6) Surface-MountedDevice (SMD) plastic package.Double PNP complement: PMBT4403YS2. Features and benefits Double general-purpose switching transistor High current (max. 600 mA) Voltage max. 40 V A

PMCM4401UNE20 V, N-channel Trench MOSFET29 May 2017 Product data sheet1. General descriptionN-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discha

PMCM4401UPE20 V, P-channel Trench MOSFET7 October 2016 Product data sheet1. General descriptionP-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-SizePackage (WLCSP) using Trench MOSFET technology.2. Features and benefits Low threshold voltage Ultra small package: 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic D

2N4400/4401 NPN EPITAXIAL SILICON TRANSISTORGENERAL PURPOSE TRANSISTORTO-92 Collector-Emitter Voltage: VCEO= 40V Collector Dissipation: PC (max)=625mWABSOLUTE MAXIMUM RATINGS (T =25 )A Characteristic Symbol Rating UnitCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 VCollector Current IC 600 mACollector Dissipation PC 6

UMT4401 / SST4401 / MMST4401 / 2N4401TransistorsNPN Medium Power Transistor(Switching)UMT4401 / SST4401 / MMST4401 / 2N4401 External dimensions (Units : mm) Features2.00.2UMT44011.30.1 0.90.11) BVCEO>40V (IC=1mA)0.65 0.65 0.2 0.70.1(1) (2)2) Complements the UMT4403 / SST4403 / MMST44030~0.1/ PN4403.(3)(1) Emitter(2) Base0.3+0.1 0.150.05ROHM : UM

SST4401 / UMT4401U3DatasheetNPN Medium Power Transistor(Switching)lOutlinelParameter Value SOT-23 SOT-323VCEO40VIC600mA SST4401 UMT4401U3(SST3) (UMT3)lFeaturesl1)BVCEO=40V(Min.) ; at IC=1mAlInner circuitl2)Complements the SST4403/UMT4403U3.lApplicationlAUDIO FREQUENCY SMALL SIGNAL AMPLIFIERlPackaging specificationslBasicPackag

UMT4401 / SST4401 / MMST4401 / 2N4401TransistorsNPN Medium Power Transistor(Switching)UMT4401 / SST4401 / MMST4401 / 2N4401 External dimensions (Units : mm) Features2.00.2UMT44011.30.1 0.90.11) BVCEO>40V (IC=1mA)0.65 0.65 0.2 0.70.1(1) (2)2) Complements the UMT4403 / SST4403 / MMST44030~0.1/ PN4403.(3)(1) Emitter(2) Base0.3+0.1 0.150.05ROHM : UM

SST4401 / MMST4401 Transistors NPN Medium Power Transistor (Switching) SST4401 / MMST4401 Features Dimensions (Unit : mm) 1) BVCEO>40V (IC=1mA) SST44012) Complements the SST4403 / MMST4403. Package, marking, and packaging specifications (1) Emitter(2) BasePart No. SST4401 MMST4401ROHM : SST3 (3) CollectorPackaging type SST3 SMT3Marking R2X R2XMMST4401Code T1

Si4401BDYVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.014 at VGS = - 10 V - 10.5 TrenchFET Power MOSFET- 40 400.021 at VGS = - 4.5 V - 8.7 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8S1 8 D SS D2 7S3 6 DGG D4

Si4401BDYVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.014 at VGS = - 10 V - 10.5 TrenchFET Power MOSFET- 40 400.021 at VGS = - 4.5 V - 8.7 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECSO-8S1 8 D SS D2 7S3 6 DGG D4

Si4401DDYVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.015 at VGS = - 10 V - 16.1 TrenchFET Power MOSFET- 40 33 nC0.022 at VGS = - 4.5 V - 13.3 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Si4401DYVishay SiliconixP-Channel 40-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Definition0.0155 at VGS = - 10 V - 10.5 TrenchFET Power MOSFETs- 400.0225 at VGS = - 4.5 V - 8.7S SO-8 SD1 8 S D 2 7 G SD3 6 G D 4 5 Top View D Ordering Information: Si4401DY-T1-E3 (Lead (Pb

Si4401DDYVishay SiliconixP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.015 at VGS = - 10 V - 16.1 TrenchFET Power MOSFET- 40 33 nC0.022 at VGS = - 4.5 V - 13.3 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

SQ4401EYwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.014 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.023 AEC-Q101 QualifiedID (A) - 17.3 100 % Rg and UIS TestedConfiguration Single Complia

SQ4401DYwww.vishay.comVishay SiliconixAutomotive P-Channel 40 V (D-S) 150 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 40DefinitionRDS(on) () at VGS = - 10 V 0.014 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.023 AEC-Q101 QualifiedID (A) - 15.8 100 % Rg and UIS TestedConfiguration Single Complia

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CMUT4401 NPNCMUT4403 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMUT4401 and SILICON TRANSISTORSCMUT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini surface mount package, designed for small signal general purpose amplifier and switching applications.MARKIN

CMPT4401 NPNCMPT4403 PNPwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMPT4401 and SILICON TRANSISTORSCMPT4403 are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose amplifier and switching applications. MARKING CODES: CMP

MMST4401 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SOT-323 A Complementary PNP Type Available (MMST4403) Dim Min Max C Ultra-Small Surface Mount Package A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B CB 1.15 1.35 "Green" Device (Note 3 and 4) C 2.00 2.20 B EMechanical Data GD 0.65 Nominal C

SOT23 NPN SILICON PLANAR400 FMMT4400GENERAL PURPOSE TRANSISTORS401 FMMT4401ISSUE 4 FEBRUARY 1997 E T I D T I T C T VB ABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) T T T I I IT DITI II i V V I I V I II V V I I V I

MMBT4401 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT23 Ideal for Medium Power Amplification and Switching Case material: molded Plastic Green Compound UL Flammability Rating 94V-0 Complementary PNP Type: MMBT4403 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Moisture Sensiti

MMDT4401 DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-363 Ideal for Low Power Amplification and Switching C2 B1 E1Dim Min Max Ultra-Small Surface Mount Package A 0.10 0.30 Qualified to AEC-Q101 Standards for High Reliability CBB 1.15 1.35 Lead Free/RoHS Compliant (Note 3) E2 B2 C1 C 2.00 2.20

MMBT4401T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT4403T) CDim Min Max Typ Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A 0.15 0.30 0.22TOP VIEW B CB 0.75 0.85 0.80B EMechanical Data C 1.45 1.75 1.60G Case: SOT-523 D 0.50

MCCMicro Commercial ComponentsTM20736 Marilla Street Chatsworth 2N4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) NPN General Capable of 600mWatts of Power DissipationPurpose Amplifier Through Hole Package Epoxy meet

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthMMST4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Power dissipation: 200mW (Tamb=25 )NPN Small Signal Collector current: 0.6A Marking : K3X Transistors Operating and Storage junction temperature range -55 to + 150 Lead Free Finish/RoHS Co

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMDT4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)Plastic-Encapsulate Ultra-Small Surface Mount Package Epitaxial Planar Die Construction Transistors

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMMBT4401Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Surface Mount SOT-23 Package Capable of 350mWatts of Power DissipationNPN General Operating and Storage Junction Temperatures: -55 to 150 Purpose Amplifier IC=600mA Marking:2X/M4A Lead Fre

MMDT4401Features Epitaxial Planar Die Construction Halogen Free Available Upon Request By Adding Suffix "-HF" Moisture Sensitivity Level 1 Dual NPN Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Otherwise Spec

NTJD4401N, NVJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant

2N4401General PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO 40 Vdc1Collector - Base Voltage VCBO 60 VdcEMITTEREmitter - Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 600 mAdcTotal Device Dissipation PD@ TA = 25C

MMBT4401M3T5GNPN Switching TransistorThe MMBT4401M3T5G device is a spin-off of our popularSOT-23 three-leaded device. It is designed for general purposeswitching applications and is housed in the SOT-723 surface mountpackage. This device is ideal for low-power surface mountapplications where board space is at a premium.http://onsemi.comFeatures Reduces Board SpaceCOLLECTO

MMBT4401LT1GSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 Vdc2EMITTEREmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 6

2N4401General PurposeTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR3MAXIMUM RATINGS2Rating Symbol Value UnitBASECollector - Emitter Voltage VCEO 40 Vdc1Collector - Base Voltage VCBO 60 VdcEMITTEREmitter - Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 600 mAdcTotal Device Dissipation PD@ TA = 25C

MMBT4401L, SMMBT4401LSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR AEC-Q101 Qualified and PPAP Capable3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements1BASEMAXIMUM RATINGS2Rating Symbol Value Uni

NTJD4401N, NVJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)www.onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max AEC-Q101 Qualified and PPAP Capable - NVJD4401N0.29 W @ 4.5 V These Devices are Pb-Free and are RoHS Compliant

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

NTHD4401PPower MOSFET-20 V, -3.0 A, Dual P-Channel, ChipFETtFeatures Low RDS(on) and Fast Switching Speed in a ChipFET Packagehttp://onsemi.com Leadless ChipFET Package 40% Smaller Footprint than TSOP-6 ChipFET Package with Excellent Thermal Capabilities where HeatTransfer is RequiredV(BR)DSS RDS(on) TYP ID MAX Pb-Free Package is Available130 mW @ -4.5 V-20 V

MMBT4401WT1GSwitching TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO

NTTD4401FFETKYt Power MOSFETand Schottky Diode-20 V, -3.3 A P-Channel with 20 V,1.0 A Schottky Diode, Micro8t Packagehttp://onsemi.comThe FETKY product family incorporates low RDS(on), true logic levelMOSFET PRODUCT SUMMARYMOSFETs packaged with industry leading, low forward drop, lowleakage Schottky Barrier Diodes to offer high efficiency components in V(BR)DSS RDS(on) TypID

NTJD4401NSmall Signal MOSFET20 V, Dual N-Channel, SC-88 ESD ProtectionFeatures Small Footprint (2 x 2 mm)http://onsemi.com Low Gate Charge N-Channel Device ESD Protected Gate Same Package as SC-70 (6 Leads)V(BR)DSS RDS(on) Typ ID Max Pb-Free Packages are Available0.29 W @ 4.5 VApplications 20 V 0.63 A0.36 W @ 2.5 V Load Power Switching Li-Ion

MMBT4401L, SMMBT4401LSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR AEC-Q101 Qualified and PPAP Capable3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements1BASEMAXIMUM RATINGS2Rating Symbol Value Uni

MMBT4401WT1GSwitching TransistorNPN SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector -- Emitter Voltage VCEO 40 VdcCollector -- Base Volta

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401LHalogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 32N4401-T9

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401LHalogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 32N4401-T9

UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. Lead-free: 2N4401LHalogen-free:2N4401G ORDERING INFORMATION Order Number Pin Assignment Package Packing Normal Lead Free Halogen Free 1 2 32N4401-T9

UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 31 DESCRIPTION 2The UTC MMBT4401 is designed for use as a medium power SOT-23amplifier and switch requiring collector currents up to 500mA. (JEDEC TO-236)312SOT-323 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT4401G-AE3-R SOT-

2N4401NPN Silicon TransistorDescriptions PIN Connection General purpose application Switching application CFeatures B Low Leakage current Low collector saturation voltage enabling Elow voltage operation Complementary pair with 2N4403 TO-92 Ordering Information Type NO. Marking Package Code 2N4401 2N4401 TO-92Absolute maximum ratings T

MMBT4401NPN Silicon TransistorDescriptions PIN Connection PIN Connection General purpose application Switching application Features Low Leakage current Low collector saturation voltage enabling low voltage operation Complementary pair with MMBT4403 SOT-23 Ordering Information Type NO. Marking Package Code 4P MMBT4401 SOT-23

2N4401NPN TransistorElektronische BauelementePlastic-Encapsulate TransistorsRoHS Compliant ProductTO-92A suffix of "-C" specifies halogen & lead-free4.550.2 3.50.2FeaturesPower Dissipationo MAXIMUM RATINGS* TA=25 C unless otherwise noted Symbol Value Units Parameter Collector-Base Voltage VCBO 60VCollector-Emitter Voltage VCEO 40VEmitter-Base Voltage

PZT4401NPN Transistor Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-223DescriptionThe PZT4401 is designed for general purpose switching and amplifier applications.Features*High Power Dissipation: 1500mW at 25 oC*High DC Current Gain: 100~300 at 150mAMillimeterMillimeter*Complementary to PZT4403 REF. REF. Min. Max. Min. Max. A 6.70

MMBT4401WNPN SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductASOT-323LCOLLECTOR Dim Min Max3A 1.800 2.200STop ViewBB 1.150 1.35031C 0.800 1.000BASEV GD 0.300 0.4001G 1.200 1.40022CH 0.000 0.100EMITTERH J 0.100 0.250JDKK 0.350 0.500L 0.590 0.720S 2.000 2.400MAXIMUM RATINGSV 0.280 0.420Rating Symbo

MMBT4401NPN SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeACOLLECTORSOT-23L3Dim Min Max33A 2.800 3.040STop View1 B11 2 B 1.200 1.400BASE2C 0.890 1.110V GD 0.370 0.5002EMITTERG 1.780 2.040CH 0.013 0.100J 0.085 0.177HJDKK 0.450 0.600L 0.890 1.020MAXIM

MMDT4401NPN Plastic-EncapsulateElektronische BauelementeMulti-Chip TransistorRoHS Compliant ProductSOT-363* Featureso.055(1.40)8.047(1.20)0o .026TYP(0.65TYP) .021REFPower Dissipation. (0.525)REFO PCM : 0.2 W (Temp.=25 C) .053(1.35).096(2.45).045(1.15).085(2.15)Collector Current.018(0.46).010(0.26)ICM : 0.6 A.014(0.35).006(0.15)C B E.006(0.

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD PackageCMBT4401SILICON PLANAR EPITAXIAL TRANSISTORNPN transistorMarkingPACKAGE OUTLINE DETAILSCMBT4401 = 2XALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectoremitter voltage VCEO max. 40 VC

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2N4401 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Value Unit Parameter 1.EMILTTER Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 V2.BASE VEBO Emitter-Base Voltage 6 V 3. COLLECTOR Collect

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate TransistorsMMST4401 TRANSISTOR (NPN)SOT323 FEATURES Complementary to MMST4403 Small Surface Mount PackageMARKING: K3XMAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASESymbol Parameter Value Unit 2. EMITTERV Collector-Base Voltage 60 V CBO3. COLLECTORV Collector-Emitter Vo

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR (NPN) SOT23 FEATURES Switching Transistor MARKING:2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emitter-Base Vol

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors J C T MMDT4401 DUAL TRANSISTOR (NPN+NPN) DUAL TRANSISTOR (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2X Maximum Ratings (Ta = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-B

SEMICONDUCTOR 2N4401SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LFEATURES Complementary to the 2N4403SCDIM MILLIMETERS_+A 2.90 0.123B 1.30+0.20/-0.15C 1.30 MAX1D 0.40+0.15/-0.05E 2.40+0.30/-0.20G 1.90J 0.10K 0.00 ~ 0.10L 0.55M 0.20 MINMAXIMUM RATING (Ta=25)N 1.00+0.20/-0.10CHARAC

SEMICONDUCTOR KN4400S/4401STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LDIM MILLIMETERS_+A 2.93 0.20FEATURES B 1.30+0.20/-0.15C 1.30 MAXComplementary to the KN4402S/4403S 23 D 0.40+0.15/-0.05E 2.40+0.30/-0.20Suffix U : Qualified to AEC-Q101.1G 1.90ex) KN4401S-RTK/HU H 0.95J 0.13+0.10/-0.05K 0

SEMICONDUCTOR KN4400/4401TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.B C Complementary to KN4402/4403.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGMAXIMUM RATING (Ta=25 )C 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage 60 VG 0.85H 0.45VCEO _Collector-Emitter Vol

Zowie Technology CorporationSwitching TransistorNPN SiliconLead free productHalogen-free typeCOLLECTOR33BASE11MMBT4401GH22EMITTERSOT-23MAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcTHERMAL CHARACTERISTICSCharacteri

MMST4401TRANSISTOR(NPN)SOT323 FEATURES Complementary to MMST4403 Small Surface Mount Package MARKING: K3X MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage 60 V CBO3. COLLECTOR V Collector-Emitter Voltage 40 V CEOV Emitter-Base Voltage 6 V EBOI Collector Current 600 mA CPC

MMBT4401TRANSISTOR(NPN)SOT-23 FEATURES Switching transistor 1. BASE MARKING: MMBT4401=2X 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VEmitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 600 mAPC Collector Power dissipation

Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.Guilin Strong Micro-Electronics Co.,Ltd.GM4401MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 40 Vdc-

2N4401(NPN) TO-92 Bipolar Transistors 1. EMITTER TO-92 2. BASE 3. COLLECTOR Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Value Units Parameter Collector-Base Voltage VCBO 60 VCollector-Emitter Voltage VCEO 40 VVEBO Emitter-Base Voltage 6 V Collector Current -Continuous IC 600 mACollector Power dissipation PC 0.625

MMBT4401 SOT-23 Transistor(NPN)1. BASE SOT-232. EMITTER 3. COLLECTOR Features Switching transistor MARKING: MMBT4401=2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base Voltage VCBO 60 V Dimensions in inches and (millimeters)VCEO Collector-Emitter Voltage 40 VEmitter-Base Voltage VEBO 6 V Collector Current -Continuou

MMDT4401 SOT-363 Dual Transistor (NPN)SOT-363Features Epitaxial Planar Die Construction Ideal for Low Power Amplification and Switching MRKING:K2X Maximum Ratings (TA = 25 unless otherwise specified) Symbol Parameter Value Units Dimensions in inches and (millimeters)VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V

2N4401General Purpose TransistorsNPN SiliconTO-92 FEATURES 11. EMITTER 2 Power dissipation 32. BASE PCM : 0.625 W Tamb=25 3. COLLECTOR Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO : 60 V Operating and storage junction temperature range TJTstg: -55 to +150 ELECTRICAL CHARACTERISTICSTamb=25 unless otherwise specifie

W4401DW2 13Epitaxial Planer Transistor654PNP Silicon12345 6SOT-363(SC-88)PNP+PNPMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V -50 VdcCEOCollector-Base Voltage VCBO -60 VdcEmitter-Base Voltage VEBO -6.0 VdcCollector Current-Continuous IC-150 mAdcThermal CharacteristicsCharacteristics Symbol Max Unit(1)Total Device Dissipati

MMBT4401COLLECTOR3Switching Transistor NPN Silicon311BASE22SOT-23EMITTERMaximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base VOltage VEBO 6.0 VdcCollector Current-Continuous IC 600 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation FR-5 Board (1)mW

FM120-M WILLASMMBT4401LT1THRUGeneral Purpose TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesBatch process design, excellent power dissipation offersWe declare that the material of product compliance with RoHS requirements. better reverse leakage current and thermal resistance.

FM120-M WILLASTHRUMMBT4401WT1General Purpose Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to We declare

Spec. No. : HE6815HI-SINCERITYIssued Date : 1993.06.30Revised Date : 2004.09.08MICROELECTRONICS CORP.Page No. : 1/5HMBT4401NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBT4401 is designed for general purpose switching and amplifierapplications.SOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature..................................................

Spec. No. : HE6215HI-SINCERITYIssued Date : 1992.09.22Revised Date : 2002.02.22MICROELECTRONICS CORP.Page No. : 1/5H2N4401NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe H2N4401 is designed for general purpose switching and amplifier applications.FeaturesTO-92 Complementary to H2N4403 High Power Dissipation: 625 mW at 25C High DC Current Gain: 100-300 at 150

Analog Power AM4401PP-Channel 150-V (D-S) MOSFETPRODUCT SUMMARYKey Features: rDS(on) (m)VDS (V) ID (A) Low r trench technology DS(on)160 @ VGS = -10V -3.6 Low thermal impedance -150170 @ VGS = -5.5V -3.5 Fast switching speed Typical Applications: SOIC-8 White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits ABS

AFT4401 Alfa-MOS Technology NPN General Purpose Amplifier Features This device is designed as a general purpose amplifier and switch. Pin Description ( SOT-23 ) Ordering Information Part Ordering No. Part Marking Package Unit Quantity AFT4401T1S23RG 2X SOT-23 Tape & Reel 3000 EA Absolute Maximum Ratings (TA=25 Unless otherwise noted) Symbol Parameter Value Unit VCEO Co

Spec. No. : C203A3 Issued Date : 2007.10.16 CYStech Electronics Corp.Revised Date :2012.03.12 Page No. : 1/7 General Purpose NPN Epitaxial Planar Transistor BTC4401A3Description The BTC4401A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 0.2V(typ.) at I /I = 500mA/50mA

Spec. No. : C203A3 Issued Date : 2003.06.06 CYStech Electronics Corp.Revised Date : 2011.12.28 Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor 2N4401A3Description The 2N4401A3 is designed for using in driver stage of AF amplifier and general purpose switching application. High current , I = 0.6A C Low V , V = 0.2V(typ.) at I /I = 500mA/50mA C

GreenProductSP4401aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.12.5 @ VGS=-10VSuface Mount Package.-30V -8A18 @ VGS=-4.5V ESD Protected.D 5 4 G6 3D S7 2D SPin 1D 8 1STSON 3.3 x 3.3ABSOLUTE

SOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsSOT-23 Plastic-Encapsulate TransistorsFEATURESFEATURESFEATURESFEATURESSwitching transistorSOT-23MARKING: MMBT4401=2XMARKING: MMBT4401=2XMARKING: MMBT4401=2XMARKING: MMBT4401=2XMAXIMUM RATINGSMAXIMUM RATINGSMAXIMUM RATINGS (TA=25 unless otherwise no

2N4401 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features High current, Low voltage. / Applications I 500mA CMedium power amplifier and switch requiring collector currents up t

MMBT4401 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 1ESD 4kV, 400VMoisture Sensitivity Level: 1, ESD Rating: Human Body Model; 4 kV, Machine Model; 400 V. / Applications I 500mA

2N4400 / 2N4401 NPN Epitaxial Silicon Transistor General purpose transistor On special request, these transistors can be manufactured in different pin configurations. 1. Emitter 2. Base 3. Collector TO-92 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit60 VCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO Emitter Base Vol

MMBT4401 NPN Silicon General Purpose Transistor TO-236 Plastic PackageOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current Continuous IC 600 mATotal Device Dissipation FR-5 Board 1) Ptot 300 mWOThermal Resistance Junction to Ambient RJA 417 C/W

LMBT4401WT1GS-LMBT4401WT1GGeneral Purpose Transistors NPN SiliconSC70(SOT-323)1. FEATURES We declare that the material of product compliance withRoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring3 Collector unique site and control change requirements; AEC-Q101 qualified and PPAP capable.1 Base2. DEVICE MARKING AND ORDERING

LESHAN RADIO COMPANY, LTD.DUAL SMALL SIGNAL SURFACE MOUNT TRANSISTORLMBT4401DW1T1G We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site S-LMBT4401DW1T1Gand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.ORDERING INFORMATION654Device Marking ShippingLMBT4401

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLMBT4401LT1GS-LMBT4401LT1GFEATURES1) We declare that the material of product compliant with3 RoHS requirements and Halogen Free.2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1011 Qualified and PPAP Capable.2SOT-23DEVICE MARKING AND

LESHAN RADIO COMPANY, LTD.General Purpose Transistor We declare that the material of product compliance with RoHS requirements.LMBT4401WT1G S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.S-LMBT4401WT1GORDERING INFORMATIONDevice Marking Shipping3LMBT4401WT1G2X 3000/Tape & Reel

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsNPN SiliconLMBT4401LT1GS-LMBT4401LT1GFEATURES1) We declare that the material of product compliant with3 RoHS requirements and Halogen Free.2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q1011 Qualified and PPAP Capable.2SOT-23DEVICE MARKING AND

SM4401PSKPP-Channel Enhancement Mode MOSFETFeatures Pin Description -40V/-55A,DDD RDS(ON)= 8m (max.) @ VGS=-20VD RDS(ON)= 9.4m (max.) @ VGS=-10V RDS(ON)= 15m (max.) @ VGS=-4.5VGPin 1SS HBM ESD capability level of 8KV typicalSDFN5x6A-8_EP 100% UIS + Rg Tested Reliable and Rugged( 5,6,7,8 )DDDD Lead Free and Green Devices Available (RoHSCompliant)

SM4401PSK P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD -40V/-16.7A,RDS(ON)= 8.5m (max.) @ VGS=-20VSRDS(ON)= 10m (max.) @ VGS=-10VSSRDS(ON)= 16m (max.) @ VGS=-4.5VGTop View of SOP-8 Reliable and Rugged Lead Free and Green Devices Available( 5,6,7,8 )(RoHS Compliant)DDDD HBM ESD protection level pass 8KVNote : The diode connected betw

SEMICONDUCTOR2N4401TECHNICAL DATAGeneral Purpose TransistorORDERING INFORMATIONDevice Marking Shipping32N4401 2X 3000/Tape & Reel21MAXIMUM RATINGSSOT23Rating Symbol Value UnitCollectorEmitter Voltage V 40 VdcCEOCollectorBase Voltage V 60 VdcCBOEmitterBase Voltage V 6.0 VdcEBO3COLLECTORCollector Current Continuous I 600 mAdcC1BASE

SMD Type TransistorsNPN Transistors MMBT4401 (KMBT4401)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Ideal for Medium Power Amplification and Switching Complementary PNP Type Available (MMBT4403)1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitColle

SMD Type TransistorsNPN TransistorsPZT4401 (KZT4401)Unit:mmSOT-2236.500.23.000.14 Features Low Voltage and Low Current Linear Amplifier and Switch Applications 1 2 3 Complementary to PZT44030.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rati

SMD Type TransistorsNPN Transistors2N4401TO-92Unit: mm+0.254.58 0.15 Features Collector Current Capability IC=0.6A Collector Emitter Voltage VCEO=40V0.46 0.10+0.101.27TYP 1.27TYP 0.38 0.051 2 3[1.27 0.20] [1.27 0.20]3.60 0.201. Emitter2. Base(R2.29)3. Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector

SMD Type TransistorsNPN TransistorsMMST4401 (KMST4401) Features Small Surface Mount Package Complementary to MMST44031.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Col

SMD Type TransistorsNPN TransistorsPZT4401 (KZT4401)Unit:mmSOT-2236.500.23.000.14 Features Low Voltage and Low Current Linear Amplifier and Switch Applications 1 2 3 Complementary to PZT44030.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rati

SMD Type TransistorsNPN Transistors MMBT4401 (KMBT4401)SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Ideal for Medium Power Amplification and Switching Complementary PNP Type Available (MMBT4403)1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitColle

SMD Type TransistorsNPN TransistorsMMST4401 (KMST4401) Features Small Surface Mount Package Complementary to MMST44031.Base2.Emitter3.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 6 Collector Current - Continuous IC 600 mA Col

MMBT4401NPN GENERAL PURPOSE SWITCHING TRANSISTORPOWER40 Volt 225 mWattVOLTAGEFEATURES0.120(3.04) NPN epitaxial silicon, planar design0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive0.056(1.40) Green molding compound as per IEC61249 Std. . 0.047(1.20) (Halogen Free)0

MMDT4401DUAL NPN GENERAL PURPOSE SWITCHING TRANSISTORPOWER 225 mWattVOLTAGE 40 VoltFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE =40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)MECHANICAL DATA Case: SOT-363, Plastic Te

CHENMKO ENTERPRISE CO.,LTDCHT4401WGPSURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURESC-70/SOT-323* Small surface mounting type. (SC-70/SOT-323)* Low current (Max.=600mA). * Suitable for high packing density.* Low voltage (Max.=40V) .* High sa

CHENMKO ENTERPRISE CO.,LTDCHT4401GPSURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURESOT-23* Small flat package. ( SOT-23 )* Low current (Max.=600mA). * Suitable for high packing density.* Low voltage (Max.=40V) .* High saturation current capab

CHENMKO ENTERPRISE CO.,LTDCHT4401TGPSURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURE SC-75/SOT-416* Small surface mounting type. (SC-75/SOT-416)* Low current (Max.=600mA). * Suitable for high packing density.0.10.20.05* Low voltage (Max.=40

CHENMKO ENTERPRISE CO.,LTDCHT4401SGPSURFACE MOUNT NPN Switching Transistor VOLTAGE 40 Volts CURRENT 0.6 AmpereAPPLICATION* Telephony and proferssional communction equipment.* Other switching applications.FEATURESC-88/SOT-363* Small surface mounting type. (SC-88/SOT-363)* Low current (Max.=600mA). * Suitable for high packing density.(1) (6)* Low voltage (Max.=40V) .

General Purpose TransistorMMBT4401-G (NPN)RoHS DeviceFeaturesSOT-23 -Switching Transistor0.118(3.00)0.110(2.80)30.055(1.40)Circuit Diagram 0.047(1.20)1 20.079(2.00)0.071(1.80)Collector30.006(0.15)0.003(0.08)0.041(1.05)0.100(2.55)10.035(0.90)Base 0.089(2.25)20.004(0.10) maxEmitter0.020(0.50)0.020(0.50) 0.012(0.30)0.012(0.30) Dimension

DC COMPONENTS CO., LTD.DMBT4401DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for general purpose switching and amplifier applications.SOT-23.020(0.50)Pinning.012(0.30)1 = Base 2 = Emitter 3.063(1.60) .108(0.65)3 = Collector.055(1.40) .089(0.25)1 2Absolute Maximum Ratings(TA=25oC).045(1.15).034(0.85)

Single P-channel MOSFETELM34401AA-NGeneral description Features ELM34401AA-N uses advanced trench technology to Vds=-30Vprovide excellent Rds(on), low gate charge and low gate Id=-8A resistance. Rds(on)

GSM4401S GSM4401S 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4401S, P-Channel enhancement mode -40V/-10.2A,RDS(ON)=13m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8.4A,RDS(ON)=16m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

2N4401(3DG4401) NPN /SILICON NPN TRANSISTOR : I 500mA CPurpose: Medium power amplifier and switch requiring collector currents up to 500 mA. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625

SENSITRONSHD724401 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 1006, REV. - Formerly part number SHSMG1009 600 VOLT, 40 AMP IGBT DEVICE HIGH SPEED, IMPROVED SCSOA ELECTRICAL CHARACTERISTICS (Tj=250C UNLESS OTHERWISE SPECIFIED) PARAMETER SYMBOL MIN TYP MAX UNIT PARAMETER SYMBOL MIN TYP MAX UNIT IGBT SPECIFICATIONS Collector to Emitter Breakdown Voltage BVCES 600 - - VIC

RUMW UMW MMBT4401SOT-23 Plastic-Encapsulate TransistorsMMBT4401 TRANSISTOR (NPN) SOT-23 FEATURES Switching Transistor MARKING:2X 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 60

SOT-23 Plastic-Encapsulate TransistorsFormosa MSMMBT4401 TRANSISTOR (NPN) FEATURES Switching Transistor SOT23 MARKING:2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 1. BASE VEBO Emitter-Base Voltage 6 V 2. EMITTER IC Collector Current 600 mA 3. COLLECTOR PC

MMBT4401 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N )SOT- 23Features Switching Transistor Marking: 2XSymbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 40 V CEOCV Emitter-Base Voltage 6 V EBOI Collector Current 600 mA CP Collector Power Dissipation 300 mW CRJA Thermal Resistance From Junction T

MMBT4401NPN Silicon Epitaxial Planar Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available: MMBT4403. Ideal for medium power amplification and switching. APPLICATIONS General purpose application, switching application. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UnitsCollector-Base Voltage V

MMBT4401TRANSISTOR (NPN) FEATURES SOT-23 Switching transistor MARKING MMBT4401=2X 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units3. COLLECTOR VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0

www.msksemi.comMMBT4401Semiconductor CompianceSemiconductor CompianceFEATURES Switching TransistorMARKING:2X SOT23 1. BASE2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collect

MMBT4401 NPN Transistor Features For Switching and AF Amplifer Applications. Silicon Epitaxial Chip.SOT-23 (TO-236) 1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings (T = 25) AParameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current I 600 mA CPower Dissipation 1

Jingdao Microelectronics co.LTD MMBT4401MMBT4401SOT-23NPN TRANSISTOR3FEATURES Switching Transistor 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)2SymbolParameter Value Unit1.BASECollectorBase Voltage VCBO 60 V2.EMITTERCollectorEmitter Voltage VCEO 40 V3.COLLECTOREmitterBase Voltage VEBO 6 V

MMDT4401SOT-363 Plastic-Encapsulate Transistors DUAL TRANSISTOR (NPN+NPN) DUAL TRANSISTOR (NPN) SOT-363 FEATURES Epitaxial Planar Die Construction Ideal for Low Power Amplification and SwitchingMRKING:K2X Maximum Ratings (Ta = 25 unless otherwise specified) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitt

MMBT4401 SOT-23 NPN Transistors3 Features Ideal for Medium Power Amplification and Switching2 1.Base Complementary PNP Type Available (MMBT4403)2.Emitter1 3.Collector Simplified outline(SOT-23) MarkingMarking 2X Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector-base voltage VCBO 60 VCollector-emitter voltage VCEO

MMBT4401 TRANSI STOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBT4403 Collector Current: Ic=0.6A Switching TransistorMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBO 60 VCollector-Base VoltageVCEO 40 VCollector-Emitter VoltageVEBO 6 VEmitter-Base VoltageIC 600 mAC

MMBT3904MMBT4401AO3400SI2305MMBT4401 TRANSISTOR ( NPN) FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403) Ideal for Medium Power Amplification and SwitchingSOT-23 1BASE 2EMITTER 3COLLECTOR MARKING: 2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsCollector-Base VoltageVCBO 60

SI4401BDY-T1www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8GSD

SI4401DDY-T1-GE3www.VBsemi.twP-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.010 at VGS = - 10 V - 16.1 100 % Rg Tested- 40 33 nC0.014 at VGS = - 4.5 V - 13.3 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONSS Load Switch POLSO-8G

RoHS RoHSCOMPLIANT COMPLIANTMMST4401 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Marking: K3X Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 60 Collector-Emitter Voltage VCEO V 40 Emitter-Base Voltage VEBO V 6 Collec

RoHS RoHSCOMPLIANT COMPLIANTMMBT4401Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case: SOT-23 Terminals: Tin plated leads,

RoHS RoHSCOMPLIANT COMPLIANTMMBT4401 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking: 2X Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 60 Collector

RoHS COMPLIANT MMDT4401Dual NPN Small Signal Transistor Features Epoxy meets UL-94 V-0 flammability rating Surface mount package ideally Suited for Automatic Insertion NPN Mechanical Data ackage: SOT-363P Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102 Marking:K2X Equivalent circuit 1 / 5 S-S3078 Yangzhou

MMBT4401 MMBT4401 SOT-23 Plastic-Encapsulate Switching Transistors (NPN) General description SOT-23 Plastic-Encapsulate Switching Transistors (NPN) FEATURES Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL: 94V-0 DEVICE MARKING CODE: Device Type Device Marking MMBT4401 2X Maximum Ratings & The

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDMMBT4401 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter VoltageVCEO 40 Vdc-Collector-Base VoltageVCBO 60 Vdc-Emitter-Base VoltageVEBO6.0 Vdc-

MMBT4401NPN GENERAL PURPOSE SWITCHING TRANSISTOR60Volts POWER 300mWattsVOLTAGEFEATURESNPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V.Collector current IC=0.6A.ansition frequency fT>250MHz @ TrIC=20mAdc, VCE=20Vdc, f=100MHz.In compliance with ER RoHS 2002/95/EC directives.MECHANICAL DATACase: SOT-23, Plastic3Terminals: So

MMBT4401BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to MMBT4403 Switching Transistor Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0 Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base V

VS4401ATH40V/130A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.4 m Enhancement modeI D(Silicon Limited) 400 A Very low on-resistanceI D(Package Limited) 130 A Fast Switching and High efficiencyTO-220AB 100% Avalanche testPart ID Package Type Marking PackingVS4401ATH TO-220AB 4401ATH 50pcs/TubeMaximum ratings, at TA =25C, u

VS4401AMH40V/130A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 1.4 m Enhancement modeI D(Wire bond Limited) 130 A Very low on-resistance Fast Switching and High efficiencyTO-263 100% Avalanche testPart ID Package Type Marking PackingVS4401AMH TO-263 4401AMH 800pcs/ReelMaximum ratings, at TA =25C, unless otherwise specifiedSy

VS4401AKH40V/260A N-Channel Advanced Power MOSFETV DS 40 VFeaturesR DS(on),TYP@ VGS=10 V 0.85 m Enhancement modeI D(Wire bond Limited) 260 A Ultra low RDS(on) to minimize conduction losses VitoMOS TechnologyTOLL 100% Avalanche Tested,100% Rg TestedPart ID Package Type Marking PackingVS4401AKH TOLL 4401AKH 2000PCS/ReelMaximum ratings, at TA =25C,

Features ASOT-23 CDim Min MaxA0.37 0.51B CB1.20 1.40TOP VIEWB ECD 2.30 2.50EGD0.89 1.03E0.45 0.60HG1.78 2.05KH2.8

HMBT4401NPN-TRANSISTORNPN, 600mA, 40V NPN NPN Switching Transistor SMDHMBT4401HMBT4401LT1NPN, BECExcellent hFE linearityGeneral Purpose TransistorsLow noiseComplementary to HMBT4403Transistor Polarity: NPNMMBT4401Transistor pinout: BEC

isc Silicon NPN Power Transistor 2N4401DESCRIPTIONWith TO-92 packagingVery high DC current gainMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSAC-DC motor controlElectronic ignitionAlternator regulatorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 60 VCBOV Collector-Emi