8820 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 88208820Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe 8820 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 6A (VGS = 10V)operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protec

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23-6 Plastic-Encapsulate MOSFETS 8820 8820 Dual N-Channel MOSFETV(BR)DSS RDS(on)MAX IDMax SOT-23-60.014 @ 4.5V20V6.0A0.018 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKINGAPPLICATI

October 2014FDMS8820N-Channel PowerTrench MOSFET30 V, 116 A, 2.0 mFeatures General Description Max rDS(on) = 2.0 m at VGS = 10 V, ID = 28 AThis N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 Aringing of DC/DC converters using either synchronous or Advanced Pac

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ8820 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 21m@10V 24m@4.5V 1. GATE 7A 28m@3.8V 20V 2. SOURCE 3. DRAIN 32m@2.5V 50m@1.8V DESCRIPTIONThe CJ8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protect

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8820 Dual N-Channel MOSFETTSSOP8 ID V(BR)DSS RDS(on)TYP Vm@1014@4.5V 16m20V7Am@3.8V1822m@2.5VDESCRIPTION The CJS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni

AO882020V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AO8820 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7Avoltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V)

rPPrPPSTM8820aS mHop Microelectronics C orp.Ver 1.0Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) MaxRugged and reliable.587 @ VGS=10VSuface Mount Package.80V 1.4A756 @ VGS=4.5VESD Protected.5 4D2 G 26D2 3S 2D1 7 2 G 1SO-88 1D1 S 11(TA=25

GreenProductSTG8820aS mHop Microelectronics C orp.Ver 1.1Dual N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.20 @ VGS=4.0VSuface Mount Package.20V 7A27 @ VGS=2.5VESD Protected.D1 D2TSSOP1 8D1/D2 D1/D22 7S 1 S 2G 1G 23 6S 1 S 24

AiT Semiconductor Inc. AM8820 www.ait-ic.com TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM8820 is available in TSSOP8 Packages 20V/6A, R = 20m(typ.) @ V = 10V DS(ON) GS R = 23m(typ.) @ V = 4.5V DS(ON) GS R = 27m(typ.) @ V = 3.1V DS(ON) GS R = 30m(typ.) @ V = 2.5V DS(ON) GS R = 42m(typ.) @ V = 1.8V DS(ON) GS

SL8820SL8820 Dual N-Channel MOSFETV(BR)DSS RDS(on)MAX IDMax SOT-23-60.014 @ 4.5V20V6.0A0.018 @ 2.5VEquivalent CircuitFEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Battery Protection Load Switch Power Management ABSOLUTE MAXIMUM RATINGS (Ta=25