8820 - описание и поиск аналогов

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 8820 8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The 8820 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 6A (VGS = 10V) operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protec

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-6 Plastic-Encapsulate MOSFETS 8820 8820 Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.014 @ 4.5V 20V 6.0A 0.018 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLICATI

October 2014 FDMS8820 N-Channel PowerTrench MOSFET 30 V, 116 A, 2.0 m Features General Description Max rDS(on) = 2.0 m at VGS = 10 V, ID = 28 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 A ringing of DC/DC converters using either synchronous or Advanced Pac

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ8820 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 21m @10V 24m @4.5V 1. GATE 7A 28m @3.8V 20V 2. SOURCE 3. DRAIN 32m @2.5V 50m @1.8V DESCRIPTION The CJ8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protect

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8820 Dual N-Channel MOSFET TSSOP8 ID V(BR)DSS RDS(on)TYP V m @10 14 @4.5V 16m 20V 7 A m @3.8V 18 22m @2.5V DESCRIPTION The CJS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni

AO8820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AO8820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7A voltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V)

r P Pr P P STM8820 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 587 @ VGS=10V Suface Mount Package. 80V 1.4A 756 @ VGS=4.5V ESD Protected. 5 4 D2 G 2 6 D2 3 S 2 D1 7 2 G 1 SO-8 8 1 D1 S 1 1 (TA=25

Green Product STG8820 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 20 @ VGS=4.0V Suface Mount Package. 20V 7A 27 @ VGS=2.5V ESD Protected. D1 D2 TSSOP 1 8 D1/D2 D1/D2 2 7 S 1 S 2 G 1 G 2 3 6 S 1 S 2 4

AiT Semiconductor Inc. AM8820 www.ait-ic.com TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM8820 is available in TSSOP8 Packages 20V/6A, R = 20m (typ.) @ V = 10V DS(ON) GS R = 23m (typ.) @ V = 4.5V DS(ON) GS R = 27m (typ.) @ V = 3.1V DS(ON) GS R = 30m (typ.) @ V = 2.5V DS(ON) GS R = 42m (typ.) @ V = 1.8V DS(ON) GS

SL8820 SL8820 Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.014 @ 4.5V 20V 6.0A 0.018 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Battery Protection Load Switch Power Management ABSOLUTE MAXIMUM RATINGS (Ta=25