8820 Datasheet PDF and Equivalents Search

 ..1. Size:1023K  shenzhen
 8820.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 8820 8820 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The 8820 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 6A (VGS = 10V) operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. It is ESD protec... See More ⇒

 ..2. Size:2976K  cn tuofeng
 8820.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23-6 Plastic-Encapsulate MOSFETS 8820 8820 Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.014 @ 4.5V 20V 6.0A 0.018 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package MARKING APPLICATI... See More ⇒

 0.1. Size:282K  fairchild semi
 fdms8820.pdf

October 2014 FDMS8820 N-Channel PowerTrench MOSFET 30 V, 116 A, 2.0 m Features General Description Max rDS(on) = 2.0 m at VGS = 10 V, ID = 28 A This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node Max rDS(on) = 2.4 m at VGS = 4.5 V, ID = 25 A ringing of DC/DC converters using either synchronous or Advanced Pac... See More ⇒

 0.2. Size:403K  onsemi
 fdms8820.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

 0.3. Size:980K  jiangsu
 cj8820.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ8820 Dual N-Channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-23 21m @10V 24m @4.5V 1. GATE 7A 28m @3.8V 20V 2. SOURCE 3. DRAIN 32m @2.5V 50m @1.8V DESCRIPTION The CJ8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protect... See More ⇒

 0.4. Size:1494K  jiangsu
 cjs8820.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TSSOP8 Plastic-Encapsulate MOSFETS CJS8820 Dual N-Channel MOSFET TSSOP8 ID V(BR)DSS RDS(on)TYP V m @10 14 @4.5V 16m 20V 7 A m @3.8V 18 22m @2.5V DESCRIPTION The CJS8820 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It is ESD protected. This device is suitable for use as a uni... See More ⇒

 0.5. Size:200K  aosemi
 ao8820.pdf

AO8820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS 20V The AO8820 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 7A voltages as low as 1.8V while retaining a 12V VGS(MAX) RDS(ON) (at VGS=10V) ... See More ⇒

 0.6. Size:104K  samhop
 stm8820.pdf

r P Pr P P STM8820 a S mHop Microelectronics C orp. Ver 1.0 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 587 @ VGS=10V Suface Mount Package. 80V 1.4A 756 @ VGS=4.5V ESD Protected. 5 4 D2 G 2 6 D2 3 S 2 D1 7 2 G 1 SO-8 8 1 D1 S 1 1 (TA=25 ... See More ⇒

 0.7. Size:131K  samhop
 stg8820.pdf

Green Product STG8820 a S mHop Microelectronics C orp. Ver 1.1 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 20 @ VGS=4.0V Suface Mount Package. 20V 7A 27 @ VGS=2.5V ESD Protected. D1 D2 TSSOP 1 8 D1/D2 D1/D2 2 7 S 1 S 2 G 1 G 2 3 6 S 1 S 2 4... See More ⇒

 0.8. Size:637K  ait semi
 am8820.pdf

AiT Semiconductor Inc. AM8820 www.ait-ic.com TSSOP8 DUAL MOSFET DUAL N-CHANNEL ENHANCEMENT MODE MOSFET DESCRIPTION FEATURES The AM8820 is available in TSSOP8 Packages 20V/6A, R = 20m (typ.) @ V = 10V DS(ON) GS R = 23m (typ.) @ V = 4.5V DS(ON) GS R = 27m (typ.) @ V = 3.1V DS(ON) GS R = 30m (typ.) @ V = 2.5V DS(ON) GS R = 42m (typ.) @ V = 1.8V DS(ON) GS ... See More ⇒

 0.9. Size:3762K  slkor
 sl8820.pdf

SL8820 SL8820 Dual N-Channel MOSFET V(BR)DSS RDS(on)MAX ID Max SOT-23-6 0.014 @ 4.5V 20V 6.0A 0.018 @ 2.5V Equivalent Circuit FEATURE TrenchFET Power MOSFET Excellent RDS(on) Low Gate Charge High Power and Current Handing Capability Surface Mount Package APPLICATION Battery Protection Load Switch Power Management ABSOLUTE MAXIMUM RATINGS (Ta=25... See More ⇒