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 ..1. Size:1723K  shenzhen
 4953b.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4953B 4953B Dual 20V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 3.5 A, 20 V R = 70 m @ V = 4.5V DS(ON) GS Fairchild Semiconductor s advanced PowerTrench R = 135m @ V = 2.5 .5 V DS(ON) GS process. It has been optimized for power manage

 ..2. Size:3429K  cn tuofeng
 4953b.pdf

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOP-8L Dual 20V P-Channel PowerTrench MOSFET 4953B Dual P-Channel 20-V(D-S) MOSFET 4953B V(BR)DSS RDS(on)MAX ID SO-8L D2 D2 0.070 @-4.5V D1 -20V -5.0A D1 0.110 @-2.5V G2 G S2 G1 S S S1 SO-8 S Pin 1 Equivalent Cir cuit General FEATURE 5 4 TrenchFET Power MOSFET Q1 6 3 Lead free product is acquired 7 2 Q2 S

 0.1. Size:564K  cystek
 mtdp4953bdyq8.pdf

Spec. No. C401Q8 Issued Date 2007.06.13 CYStech Electronics Corp. Revised Date 2011.03.21 Page No. 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953BDYQ8 Description The MTDP4953BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SO

 0.2. Size:414K  jiejie micro
 jmtp4953b.pdf

JMTP4953B Description JMT P-channel Enhancement Mode Power MOSFET Features Application V = -20V, I = -4A PWM Applications DS D R

 0.3. Size:763K  cn hmsemi
 hm4953b.pdf

HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provide D D excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G G load switch or in PWM applications. S S GENERAL FEATURES Schematic diagram VDS = -20V,ID = -5A RDS(ON)

 0.4. Size:1659K  cn apm
 ap4953b.pdf

AP4953B -20V P+P-Channel Enhancement Mode MOSFET Description The AP4953B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-6.5A DS D R