4953B - Даташиты. Аналоги. Основные параметры

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4953B4953BDual 20V P-Channel PowerTrench MOSFET General Description Features This P MOSFET is a rugged gate version of -Channel 3.5 A, 20 V R = 70 m @ V = 4.5V DS(ON) GSFairchild Semiconductors advanced PowerTrench R = 135m @ V = 2.5.5 V DS(ON) GSprocess. It has been optimized for power manage

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOP-8L Dual 20V P-Channel PowerTrench MOSFET 4953BDual P-Channel 20-V(D-S) MOSFET4953BV(BR)DSS RDS(on)MAX IDSO-8L D2D20.070@-4.5VD1-20V -5.0A D10.110@-2.5VG2GS2G1 SSS1SO-8 SPin 1Equivalent Cir cuitGeneral FEATURE5 4TrenchFET Power MOSFETQ16 3Lead free product is acquired7 2Q2S

Spec. No. : C401Q8 Issued Date : 2007.06.13 CYStech Electronics Corp.Revised Date : 2011.03.21 Page No. : 1/8 P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDP4953BDYQ8 Description The MTDP4953BDYQ8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SO

JMTP4953BDescriptionJMT P-channel Enhancement Mode Power MOSFETFeatures Application V = -20V, I = -4A PWM ApplicationsDS DR

HM4953B Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4953B uses advanced trench technology to provide D Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a G Gload switch or in PWM applications. S SGENERAL FEATURES Schematic diagram VDS = -20V,ID = -5A RDS(ON)

AP4953B -20V P+P-Channel Enhancement Mode MOSFET Description The AP4953B uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-6.5A DS DR