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 ..1. Size:999K  shenzhen
 si2315.pdf

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2315 G 1 3 D S 2 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an ext

 0.1. Size:206K  vishay
 si2315bds.pdf

Si2315BDS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 1.8 V Rated 0.050 at VGS = - 4.5 V - 3.85 Available 0.065 at VGS = - 2.5 V - 12 - 3.4 RoHS* COMPLIANT 0.100 at VGS = - 1.8V - 2.7 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2315BDS *(M5) *

 0.2. Size:1896K  kexin
 si2315bds.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET SI2315BDS (KI2315BDS) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) =-12V 3 ID =-3.85A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V) RDS(ON) 65m (VGS =-2.5V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 100m (VGS =-1.8V) +0.1 1.9-0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain A

 0.3. Size:1928K  kexin
 si2315bds-3.pdf

SMD Type MOSFET P-Channel Enhancement MOSFET SI2315BDS (KI2315BDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-12V ID =-3.85A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V) 1 2 RDS(ON) 65m (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 100m (VGS =-1.8V) G 1 3 D 1. Gate S 2 2. Source 3. D

 0.4. Size:275K  inchange semiconductor
 si2315bds.pdf

isc P-Channel MOSFET Transistor Si2315BDS FEATURES Static drain-source on-resistance R 52m @V = -4.5V; I = -3.8A DS(on) GS D Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications