Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2315G 13 DS 2DescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremelylow on-resistance per silicon area. This benefit, combinedwith the fast switching speed and ruggedized device designthat power MOSFETs are well known for, providesthe designer with an ext

Si2315BDSVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs: 1.8 V Rated 0.050 at VGS = - 4.5 V - 3.85Available0.065 at VGS = - 2.5 V - 12 - 3.4RoHS*COMPLIANT0.100 at VGS = - 1.8V - 2.7TO-236(SOT-23)G 13 DS 2Top ViewSi2315BDS *(M5)*

SMD Type MOSFETP-Channel Enhancement MOSFET SI2315BDS (KI2315BDS)SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 VDS (V) =-12V 3 ID =-3.85A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V) RDS(ON) 65m (VGS =-2.5V) 1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 100m (VGS =-1.8V)+0.11.9-0.1G 11.Gate3 D2.SourceS 23.Drain A

SMD Type MOSFETP-Channel Enhancement MOSFET SI2315BDS (KI2315BDS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) =-12V ID =-3.85A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V)1 2 RDS(ON) 65m (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 100m (VGS =-1.8V)G 13 D1. GateS 22. Source3. D

isc P-Channel MOSFET Transistor Si2315BDSFEATURESStatic drain-source on-resistance:R 52m@V = -4.5V; I = -3.8ADS(on) GS DEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applications