SI2315 - описание и поиск аналогов

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2315 G 1 3 D S 2 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an ext

Si2315BDS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 1.8 V Rated 0.050 at VGS = - 4.5 V - 3.85 Available 0.065 at VGS = - 2.5 V - 12 - 3.4 RoHS* COMPLIANT 0.100 at VGS = - 1.8V - 2.7 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2315BDS *(M5) *

SMD Type MOSFET P-Channel Enhancement MOSFET SI2315BDS (KI2315BDS) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) =-12V 3 ID =-3.85A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V) RDS(ON) 65m (VGS =-2.5V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 100m (VGS =-1.8V) +0.1 1.9-0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain A

SMD Type MOSFET P-Channel Enhancement MOSFET SI2315BDS (KI2315BDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-12V ID =-3.85A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V) 1 2 RDS(ON) 65m (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 100m (VGS =-1.8V) G 1 3 D 1. Gate S 2 2. Source 3. D

isc P-Channel MOSFET Transistor Si2315BDS FEATURES Static drain-source on-resistance R 52m @V = -4.5V; I = -3.8A DS(on) GS D Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and general purpose applications