SI2315 PDF and Equivalents Search

 

SI2315 Specs and Replacement

Type Designator: SI2315

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT23

SI2315 substitution

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SI2315 datasheet

 ..1. Size:999K  shenzhen
si2315.pdf pdf_icon

SI2315

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2315 G 1 3 D S 2 Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an ext... See More ⇒

 0.1. Size:206K  vishay
si2315bds.pdf pdf_icon

SI2315

Si2315BDS Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 1.8 V Rated 0.050 at VGS = - 4.5 V - 3.85 Available 0.065 at VGS = - 2.5 V - 12 - 3.4 RoHS* COMPLIANT 0.100 at VGS = - 1.8V - 2.7 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2315BDS *(M5) *... See More ⇒

 0.2. Size:1896K  kexin
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SI2315

SMD Type MOSFET P-Channel Enhancement MOSFET SI2315BDS (KI2315BDS) SOT-23 Unit mm +0.1 2.9 -0.1 Features +0.1 0.4 -0.1 VDS (V) =-12V 3 ID =-3.85A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V) RDS(ON) 65m (VGS =-2.5V) 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 RDS(ON) 100m (VGS =-1.8V) +0.1 1.9-0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain A... See More ⇒

 0.3. Size:1928K  kexin
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SI2315

SMD Type MOSFET P-Channel Enhancement MOSFET SI2315BDS (KI2315BDS) SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4-0.1 Features 3 VDS (V) =-12V ID =-3.85A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V) 1 2 RDS(ON) 65m (VGS =-2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 100m (VGS =-1.8V) G 1 3 D 1. Gate S 2 2. Source 3. D... See More ⇒

Detailed specifications: SI2304, SI2305B, SI2307, SI2308, SI2309, SI2310, SI2313, SI2314, IRF520, SI2319, SI2323, SI2328, SIA519, XP151A13AO, XP152A12CO, 20N06, 60N03

Keywords - SI2315 MOSFET specs

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