SI2315
MOSFET. Datasheet pdf. Equivalent
Type Designator: SI2315
Marking Code: C52TF
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 0.95
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 10
nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.055
Ohm
Package:
SOT23
SI2315
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SI2315
Datasheet (PDF)
..1. Size:999K shenzhen
si2315.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2315G 13 DS 2DescriptionThese P-Channel MOSFETs from International Rectifierutilize advanced processing techniques to achieve extremelylow on-resistance per silicon area. This benefit, combinedwith the fast switching speed and ruggedized device designthat power MOSFETs are well known for, providesthe designer with an ext
0.1. Size:206K vishay
si2315bds.pdf
Si2315BDSVishay SiliconixP-Channel 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs: 1.8 V Rated 0.050 at VGS = - 4.5 V - 3.85Available0.065 at VGS = - 2.5 V - 12 - 3.4RoHS*COMPLIANT0.100 at VGS = - 1.8V - 2.7TO-236(SOT-23)G 13 DS 2Top ViewSi2315BDS *(M5)*
0.2. Size:1896K kexin
si2315bds.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2315BDS (KI2315BDS)SOT-23Unit: mm+0.12.9 -0.1 Features+0.10.4 -0.1 VDS (V) =-12V 3 ID =-3.85A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V) RDS(ON) 65m (VGS =-2.5V) 1 2+0.1+0.050.95-0.1 0.1-0.01 RDS(ON) 100m (VGS =-1.8V)+0.11.9-0.1G 11.Gate3 D2.SourceS 23.Drain A
0.3. Size:1928K kexin
si2315bds-3.pdf
SMD Type MOSFETP-Channel Enhancement MOSFET SI2315BDS (KI2315BDS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.1 Features3 VDS (V) =-12V ID =-3.85A (VGS =-4.5V) RDS(ON) 50m (VGS =-4.5V)1 2 RDS(ON) 65m (VGS =-2.5V)+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2 RDS(ON) 100m (VGS =-1.8V)G 13 D1. GateS 22. Source3. D
0.4. Size:275K inchange semiconductor
si2315bds.pdf
isc P-Channel MOSFET Transistor Si2315BDSFEATURESStatic drain-source on-resistance:R 52m@V = -4.5V; I = -3.8ADS(on) GS DEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgeneral purpose applications
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