SSS12N60 Todos los transistores

 

SSS12N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SSS12N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: TO220F
 

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SSS12N60 Datasheet (PDF)

 ..1. Size:8243K  shenzhen
 sss12n60.pdf pdf_icon

SSS12N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS12N60N N-CHANNEL MOSFET Package MAIN CHARACTERISTICS 12 A ID 600 V VDSS Rdson 0.65 @Vgs=10V39nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS

 9.1. Size:491K  silikron
 sss1206.pdf pdf_icon

SSS12N60

SSS1206 Main Product Characteristics VDSS 120V RDS(on) 4m (typ.) ID 180A Mar ki ng a nd p in Schema tic diagra m TO-220 Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.2. Size:337K  silikron
 sss1206h.pdf pdf_icon

SSS12N60

SSS1206HMain Product Characteristics VDSS 120V RDS(on) 4.7m (typ.) ID 180A Marking and pin TO-247Schematic diagramAssignmentFeatures and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 oper

Otros transistores... SIA519 , XP151A13AO , XP152A12CO , 20N06 , 60N03 , 70N03 , 90N03 , SSS10N60 , IRF830 , SSS1N60 , SSS2N60 , SSS5N60 , SSS7N60 , SSS8N60 , 1002 , 1115 , 1515 .

 

 
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