All MOSFET. SSS12N60 Datasheet

 

SSS12N60 Datasheet and Replacement


   Type Designator: SSS12N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220F
 

 SSS12N60 substitution

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SSS12N60 Datasheet (PDF)

 ..1. Size:8243K  shenzhen
 sss12n60.pdf pdf_icon

SSS12N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS12N60N N-CHANNEL MOSFET Package MAIN CHARACTERISTICS 12 A ID 600 V VDSS Rdson 0.65 @Vgs=10V39nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS

 9.1. Size:491K  silikron
 sss1206.pdf pdf_icon

SSS12N60

SSS1206 Main Product Characteristics VDSS 120V RDS(on) 4m (typ.) ID 180A Mar ki ng a nd p in Schema tic diagra m TO-220 Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.2. Size:337K  silikron
 sss1206h.pdf pdf_icon

SSS12N60

SSS1206HMain Product Characteristics VDSS 120V RDS(on) 4.7m (typ.) ID 180A Marking and pin TO-247Schematic diagramAssignmentFeatures and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 oper

Datasheet: SIA519 , XP151A13AO , XP152A12CO , 20N06 , 60N03 , 70N03 , 90N03 , SSS10N60 , MMIS60R580P , SSS1N60 , SSS2N60 , SSS5N60 , SSS7N60 , SSS8N60 , 1002 , 1115 , 1515 .

Keywords - SSS12N60 MOSFET datasheet

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