All MOSFET. SSS12N60 Datasheet

 

SSS12N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSS12N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220F

 SSS12N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSS12N60 Datasheet (PDF)

 ..1. Size:8243K  shenzhen
 sss12n60.pdf

SSS12N60 SSS12N60

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SSS12N60N N-CHANNEL MOSFET Package MAIN CHARACTERISTICS 12 A ID 600 V VDSS Rdson 0.65 @Vgs=10V39nC Qg APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS

 9.1. Size:491K  silikron
 sss1206.pdf

SSS12N60 SSS12N60

SSS1206 Main Product Characteristics VDSS 120V RDS(on) 4m (typ.) ID 180A Mar ki ng a nd p in Schema tic diagra m TO-220 Assignment Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery

 9.2. Size:337K  silikron
 sss1206h.pdf

SSS12N60 SSS12N60

SSS1206HMain Product Characteristics VDSS 120V RDS(on) 4.7m (typ.) ID 180A Marking and pin TO-247Schematic diagramAssignmentFeatures and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175 oper

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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