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1115 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 1115

Código: 1115

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 330 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 150 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 100 nS

Conductancia de drenaje-sustrato (Cd): 540 pF

Resistencia drenaje-fuente RDS(on): 0.0068 Ohm

Empaquetado / Estuche: TO220

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1115 Datasheet (PDF)

1.1. 2sk1115.pdf Size:78K _update

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1.2. un1110q un1110r un1110s un1111 un1112 un1113 un1114 un1115q un1116q un1116r un1116s un1117q un1117r un1117s un1118 un1119 un111d un111e un111f un111h un111l.pdf Size:263K _upd

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Transistors with built-in Resistor UNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ 111D/111E/111F/111H/111L (UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ Unit: mm 111D/111E/111F/111H/111L) 2.5±0.1 6.9±0.1 (1.0) (1.5) Silicon PNP epitaxial planar transistor (1.5) R 0.9 For digital circuits R 0.7 Features Costs can be reduced through downsizing of the equipment and

 1.3. rn1114mfv rn1115mfv rn1116mfv rn1117mfv rn1118mfv.pdf Size:174K _toshiba

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RN1114MFV?RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114MFV,RN1115MFV,RN1116MFV,RN1117MFV,RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Unit: mm Driver Circuit Applications 1.2 ± 0.05 With built-in bias resistors 0.80 ± 0.05 Simplify circuit design Reduce a quantity of parts and manufactu

1.4. ssm6j212fe 101115.pdf Size:190K _toshiba

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SSM6J212FE TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS?) SSM6J212FE 0 Power Management Switch Applications Unit: mm • 1.5-V drive • Low ON-resistance: RDS(ON) = 94.0 m? (max) (@VGS = -1.5 V) RDS(ON) = 65.4 m? (max) (@VGS = -1.8 V) RDS(ON) = 49.0 m? (max) (@VGS = -2.5 V) RDS(ON) = 40.7 m? (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) C

 1.5. ssm3j46ctb 101115.pdf Size:201K _toshiba

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SSM3J46CTB TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS VI) SSM3J46CTB 0 Power Management Switch Applications Unit: mm • 1.5 V drive • Low ON-resistance:RDS(ON) = 250 m? (max) (@VGS = -1.5 V) RDS(ON) = 178 m? (max) (@VGS = -1.8 V) RDS(ON) = 133 m? (max) (@VGS = -2.5 V) RDS(ON) = 103 m? (max) (@VGS = -4.5 V) Absolute Maximum Ratings (Ta = 25°C) Cha

1.6. rej03g1115 h5n5006ldlslmds.pdf Size:111K _renesas

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.7. 2sb1115a.pdf Size:228K _nec

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1.8. 2sb1115.pdf Size:228K _nec

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1.9. ald1115.pdf Size:80K _ald

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ADVANCED LINEAR ALD1115 DEVICES, INC. COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET APPLICATIONS GENERAL DESCRIPTION Precision current mirrors The ALD1115 is a monolithic complementary N-channel and P-channel Complementary push-pull linear drives transistor pair intended for a broad range of analog applications. These Discrete analog switches enhancement-mode transistors are manuf

1.10. 2sa1115.pdf Size:39K _no

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1.11. 2sd1115k.pdf Size:57K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1115K DESCRIPTION ·With TO-220 package ·DARLINGTON APPLICATIONS ·For high voltage switching and ignitor applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25?) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-bas

1.12. 2sd1115.pdf Size:259K _inchange_semiconductor

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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD1115 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V(Min) ·High DC Current Gain : hFE= 500(Min)@IC= 2A APPLICATIONS ·Designed for high voltage switching, igniter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base

1.13. 1115.pdf Size:2223K _goford

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GOFORD 1115 DESCRIPTION The 1115 uses advanced trench technology and VDSS RDS(ON) ID design to provide excellent R with low gate DS(ON) 100V 5.5mΩ 150A charge. It can be used in a wide variety of applications. GENERAL FEATURES • VDS =100V,ID =150A RDS(ON) < 6.8mΩ @ VGS=10V (Typ:5.5mΩ) • High density cell design for ultra low Rdson. • Fully characterized avalanche vo

1.14. 2sb1115a.pdf Size:1207K _kexin

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SMD Type Transistors PNP Transistors 2SB1115A ■ Features 1.70 0.1 ● Low VCE(sat) VCE(sat)=-0.2V at 1A ● Complementary to 2SD1615A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -6 Collector Current

1.15. 2sb1115.pdf Size:1195K _kexin

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SMD Type Transistors PNP Transistors 2SB1115 ■ Features 1.70 0.1 ● Low VCE(sat) VCE(sat)=-0.2V at 1A ● Complementary to 2SD1615 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current -

Otros transistores... IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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MOSFET: UPA2700GR | UPA2680T1E | UPA2672T1R | UPA2670T1R | UPA2650T1E | UPA2593T1H | UPA2592T1H | UPA2591T1H | UPA2590T1H | UPA2562T1H | UPA2561T1H | UPA2560T1H | UPA2560 | UPA2550T1H | UPA2550 |

 

 

 
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