1115 Datasheet. Equivalente

 ..1. Size:2223K  goford
 1115.pdf

GOFORD 1115 DESCRIPTION The 1115 uses advanced trench technology and VDSS RDS(ON) ID design to provide excellent R with low gate DS(ON) 100V 5.5m 150A charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =100V,ID =150A RDS(ON)

 0.1. Size:78K  toshiba
 2sk1115.pdf

Free Datasheet http //www.datasheet4u.com/ Free Datasheet http //www.datasheet4u.com/

 0.2. Size:174K  toshiba
 rn1114mfv rn1115mfv rn1116mfv rn1117mfv rn1118mfv.pdf

RN1114MFV RN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114MFV,RN1115MFV,RN1116MFV,RN1117MFV,RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Unit mm Driver Circuit Applications 1.2 0.05 With built-in bias resistors 0.80 0.05 Simplify circuit design Reduce a quantity of parts and manufac

 0.3. Size:111K  renesas
 rej03g1115 h5n5006ldlslmds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 0.4. Size:228K  nec
 2sb1115 2sb1115a.pdf

 0.5. Size:263K  panasonic
 un1110q un1110r un1110s un1111 un1112 un1113 un1114 un1115q un1116q un1116r un1116s un1117q un1117r un1117s un1118 un1119 un111d un111e un111f un111h un111l.pdf

Transistors with built-in Resistor UNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ 111D/111E/111F/111H/111L (UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ Unit mm 111D/111E/111F/111H/111L) 2.5 0.1 6.9 0.1 (1.0) (1.5) Silicon PNP epitaxial planar transistor (1.5) R 0.9 For digital circuits R 0.7 Features Costs can be reduced through downsizing of the equipment and

 0.6. Size:80K  ald
 ald1115.pdf

ADVANCED LINEAR ALD1115 DEVICES, INC. COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET APPLICATIONS GENERAL DESCRIPTION Precision current mirrors The ALD1115 is a monolithic complementary N-channel and P-channel Complementary push-pull linear drives transistor pair intended for a broad range of analog applications. These Discrete analog switches enhancement-mode transistors

 0.7. Size:39K  no
 2sa1115.pdf

 0.8. Size:291K  aosemi
 aoss21115c.pdf

AOSS21115C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -4.5A Low Gate Charge RDS(ON) (at VGS=-4.5V)

 0.9. Size:611K  aosemi
 aots21115c.pdf

AOTS21115C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -6.6A Low Gate Charge RDS(ON) (at VGS=-4.5V)

 0.10. Size:367K  aosemi
 aote21115c.pdf

AOTE21115C 20V P-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology -20V Low RDS(ON) ID (at VGS=-4.5V) -4.9A Low Gate Charge RDS(ON) (at VGS=-4.5V)

 0.11. Size:1195K  kexin
 2sb1115.pdf

SMD Type Transistors PNP Transistors 2SB1115 Features 1.70 0.1 Low VCE(sat) VCE(sat)=-0.2V at 1A Complementary to 2SD1615 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current -

 0.12. Size:1207K  kexin
 2sb1115a.pdf

SMD Type Transistors PNP Transistors 2SB1115A Features 1.70 0.1 Low VCE(sat) VCE(sat)=-0.2V at 1A Complementary to 2SD1615A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -6 Collector Current

 0.13. Size:607K  cn shikues
 2sb1115-ym 2sb1115-yl 2sb1115-yk.pdf

 0.14. Size:176K  inchange semiconductor
 2sc1115.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1115 DESCRIPTION With TO-3 Package High voltage Wide area of safe operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

 0.15. Size:209K  inchange semiconductor
 2sd1115.pdf

isc Silicon NPN Darlington Power Transistor 2SD1115 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min) CEO(SUS) High DC Current Gain h = 500(Min)@I = 2A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching, igniter applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL P

 0.16. Size:260K  inchange semiconductor
 2sk1115.pdf

isc N-Channel MOSFET Transistor 2SK1115 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =60V(Min) DSS Static Drain-Source On-Resistance R = 55m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 0.17. Size:57K  inchange semiconductor
 2sd1115k.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1115K DESCRIPTION With TO-220 package DARLINGTON APPLICATIONS For high voltage switching and ignitor applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collecto