Справочник MOSFET. 1115

 

1115 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 1115

Маркировка: 1115

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 330 W

Предельно допустимое напряжение сток-исток |Uds|: 100 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Максимально допустимый постоянный ток стока |Id|: 150 A

Максимальная температура канала (Tj): 175 °C

Время нарастания (tr): 100 ns

Выходная емкость (Cd): 540 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.0068 Ohm

Тип корпуса: TO220

Аналог (замена) для 1115

 

 

1115 Datasheet (PDF)

0.1. rn1114mfv rn1115mfv rn1116mfv rn1117mfv rn1118mfv.pdf Size:174K _toshiba

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RN1114MFVRN1118MFV TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1114MFV,RN1115MFV,RN1116MFV,RN1117MFV,RN1118MFV Switching Applications Inverter Circuit Applications Interface Circuit Applications Unit: mmDriver Circuit Applications 1.2 0.05 With built-in bias resistors 0.80 0.05 Simplify circuit design Reduce a quantity of parts and manufac

0.2. 2sk1115.pdf Size:78K _toshiba

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1115

Free Datasheet http://www.datasheet4u.com/Free Datasheet http://www.datasheet4u.com/

 0.3. rej03g1115 h5n5006ldlslmds.pdf Size:111K _renesas

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1115

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

0.4. 2sb1115 2sb1115a.pdf Size:228K _nec

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1115

 0.5. un1110q un1110r un1110s un1111 un1112 un1113 un1114 un1115q un1116q un1116r un1116s un1117q un1117r un1117s un1118 un1119 un111d un111e un111f un111h un111l.pdf Size:263K _panasonic

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1115

Transistors with built-in ResistorUNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/111D/111E/111F/111H/111L(UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/Unit: mm111D/111E/111F/111H/111L)2.50.16.90.1(1.0)(1.5)Silicon PNP epitaxial planar transistor(1.5)R 0.9For digital circuitsR 0.7FeaturesCosts can be reduced through downsizing of the equipment and

0.6. ald1115.pdf Size:80K _ald

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1115

ADVANCEDLINEARALD1115DEVICES, INC.COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFETAPPLICATIONSGENERAL DESCRIPTION Precision current mirrorsThe ALD1115 is a monolithic complementary N-channel and P-channel Complementary push-pull linear drivestransistor pair intended for a broad range of analog applications. These Discrete analog switchesenhancement-mode transistors

0.7. 2sa1115.pdf Size:39K _no

1115

0.8. 1115.pdf Size:2223K _goford

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1115

GOFORD1115DESCRIPTIONThe 1115 uses advanced trench technology andVDSS RDS(ON) IDdesign to provide excellent R with low gateDS(ON)100V 5.5m 150Acharge. It can be used in a wide variety ofapplications.GENERAL FEATURES VDS =100V,ID =150ARDS(ON)

0.9. 2sb1115.pdf Size:1195K _kexin

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1115

SMD Type TransistorsPNP Transistors2SB1115 Features1.70 0.1 Low VCE(sat) VCE(sat)=-0.2V at 1A Complementary to 2SD16150.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -6 Collector Current -

0.10. 2sb1115a.pdf Size:1207K _kexin

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SMD Type TransistorsPNP Transistors2SB1115A Features1.70 0.1 Low VCE(sat) VCE(sat)=-0.2V at 1A Complementary to 2SD1615A0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -80 Collector - Emitter Voltage VCEO -60 V Emitter - Base Voltage VEBO -6 Collector Current

0.11. 2sd1115k.pdf Size:57K _inchange_semiconductor

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Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1115K DESCRIPTION With TO-220 package DARLINGTON APPLICATIONS For high voltage switching and ignitor applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collecto

0.12. 2sc1115.pdf Size:176K _inchange_semiconductor

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1115

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1115DESCRIPTIONWith TO-3 PackageHigh voltageWide area of safe operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor power amplifier applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

0.13. 2sd1115.pdf Size:209K _inchange_semiconductor

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isc Silicon NPN Darlington Power Transistor 2SD1115DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High DC Current Gain: h = 500(Min)@I = 2AFE CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching, igniter applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL P

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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