6616 Todos los transistores

 ..1. Size:1781K  goford
 6616.pdf

GOFORD 6616 SOIC-8 General Description The 6616 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. Product Summary Pin1 VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) Top View S2 1 8 D2 -12V 17 m 21m -16 A G2 D2 2 7 S1 3 6 D1 G1 4 5 D1

 0.1. Size:661K  international rectifier
 irgps66160d.pdf

IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100 C tSC 5 s, TJ(max) = 175 C G VCE(ON) typ. = 1.65V @ IC = 120A E IRGPS66160DPbF n-channel Super 247 Applications Welding G C E H Bridge Converters Gate Collector Emitter Features Benefits Low VCE(ON) and Switching Losses H

 0.2. Size:276K  international rectifier
 irf6616pbf irf6616trpbf.pdf

PD - 96100 IRF6616PbF IRF6616TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (

 0.3. Size:277K  international rectifier
 irf6616.pdf

PD - 96999B IRF6616 DirectFET Power MOSFET Typical values (unless otherwise specified) l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (

 0.4. Size:28K  sanyo
 mch6616.pdf

Ordering number ENN7013 MCH6616 N-Channel Silicon MOSFET MCH6616 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2173A 2.5V drive. [MCH6616] Composite type with 2 MOSFETs contained in a single 0.3 0.15 package, facilitating high-density mounting. 4 5 6 3 2 1 1 Source1 2 Gate1 0.65

 0.5. Size:717K  aosemi
 aous66616.pdf

AOUS66616 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 92A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 0.6. Size:732K  aosemi
 aod66616.pdf

AOD66616 60V N-Channel AlphaSGT TM General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 0.7. Size:1258K  aosemi
 aot66616l aob66616l.pdf

AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 0.8. Size:785K  aosemi
 aot66616l.pdf

AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 0.9. Size:709K  aosemi
 aow66616.pdf

AOW66616 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 0.10. Size:788K  aosemi
 aob66616l.pdf

AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

 0.11. Size:723K  aosemi
 aotf66616l.pdf

AOTF66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 72.5A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)