GOFORD6616SOIC-8General DescriptionThe 6616 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 1.8V. This device is suitable for use asa load switch.Product SummaryPin1VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ) Top ViewS2 1 8 D2-12V17 m 21m -16AG2 D227S1 3 6 D1G1 4 5 D1

IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100C tSC 5s, TJ(max) = 175C GVCE(ON) typ. = 1.65V @ IC = 120A EIRGPS66160DPbFn-channelSuper247Applications Welding G C E H Bridge Converters Gate Collector EmitterFeatures Benefits Low VCE(ON) and Switching Losses H

PD - 96100IRF6616PbFIRF6616TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (

PD - 96999BIRF6616DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (

Ordering number : ENN7013MCH6616N-Channel Silicon MOSFETMCH6616Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6616] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitating high-density mounting.4 5 63 2 1 1 : Source12 : Gate10.65

AOUS66616TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 92A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

AOD6661660V N-Channel AlphaSGT TMGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

AOT66616L/AOB66616LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

AOW66616TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

AOT66616L/AOB66616LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

AOTF66616LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 72.5A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)