6616 - описание и поиск аналогов

GOFORD 6616 SOIC-8 General Description The 6616 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. Product Summary Pin1 VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) Top View S2 1 8 D2 -12V 17 m 21m -16 A G2 D2 2 7 S1 3 6 D1 G1 4 5 D1

IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100 C tSC 5 s, TJ(max) = 175 C G VCE(ON) typ. = 1.65V @ IC = 120A E IRGPS66160DPbF n-channel Super 247 Applications Welding G C E H Bridge Converters Gate Collector Emitter Features Benefits Low VCE(ON) and Switching Losses H

PD - 96100 IRF6616PbF IRF6616TRPbF DirectFET Power MOSFET Typical values (unless otherwise specified) l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (

PD - 96999B IRF6616 DirectFET Power MOSFET Typical values (unless otherwise specified) l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (

Ordering number ENN7013 MCH6616 N-Channel Silicon MOSFET MCH6616 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Ultrahigh-speed switching. 2173A 2.5V drive. [MCH6616] Composite type with 2 MOSFETs contained in a single 0.3 0.15 package, facilitating high-density mounting. 4 5 6 3 2 1 1 Source1 2 Gate1 0.65

AOUS66616 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 92A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

AOD66616 60V N-Channel AlphaSGT TM General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

AOW66616 TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

AOT66616L/AOB66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)

AOTF66616L TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 72.5A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)