6616 Datasheet and Replacement
Type Designator: 6616
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 580 nS
Cossⓘ - Output Capacitance: 334 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: SOP8
6616 substitution
6616 Datasheet (PDF)
6616.pdf

GOFORD6616SOIC-8General DescriptionThe 6616 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 1.8V. This device is suitable for use asa load switch.Product SummaryPin1VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ) Top ViewS2 1 8 D2-12V17 m 21m -16AG2 D227S1 3 6 D1G1 4 5 D1
irgps66160d.pdf

IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100C tSC 5s, TJ(max) = 175C GVCE(ON) typ. = 1.65V @ IC = 120A EIRGPS66160DPbFn-channelSuper247Applications Welding G C E H Bridge Converters Gate Collector EmitterFeatures Benefits Low VCE(ON) and Switching Losses H
irf6616pbf irf6616trpbf.pdf

PD - 96100IRF6616PbFIRF6616TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (
irf6616.pdf

PD - 96999BIRF6616DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (
Datasheet: G1601 , 2300 , 2301 , 2302 , 3035 , 3400 , 3401 , 3415 , BS170 , 6703 , 6760 , 7080 , 8070 , 8680 , G29 , G33 , G37 .
History: IRF7807V
Keywords - 6616 MOSFET datasheet
6616 cross reference
6616 equivalent finder
6616 lookup
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History: IRF7807V



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