6616
MOSFET. Datasheet pdf. Equivalent
Type Designator: 6616
Marking Code: 6616
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 3
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 12
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1
V
|Id|ⓘ - Maximum Drain Current: 16
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 580
nS
Cossⓘ -
Output Capacitance: 334
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021
Ohm
Package:
SOP8
6616
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
6616
Datasheet (PDF)
..1. Size:1781K goford
6616.pdf 
GOFORD6616SOIC-8General DescriptionThe 6616 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gatevoltages as low as 1.8V. This device is suitable for use asa load switch.Product SummaryPin1VDSS RDS(ON) RDS(ON) ID(Typ) @-2.5V @-4.5V (Typ) Top ViewS2 1 8 D2-12V17 m 21m -16AG2 D227S1 3 6 D1G1 4 5 D1
0.1. Size:661K international rectifier
irgps66160d.pdf
IRGPS66160DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C IC = 160A, TC =100C tSC 5s, TJ(max) = 175C GVCE(ON) typ. = 1.65V @ IC = 120A EIRGPS66160DPbFn-channelSuper247Applications Welding G C E H Bridge Converters Gate Collector EmitterFeatures Benefits Low VCE(ON) and Switching Losses H
0.2. Size:277K international rectifier
irf6616.pdf
PD - 96999BIRF6616DirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (
0.3. Size:28K sanyo
mch6616.pdf
Ordering number : ENN7013MCH6616N-Channel Silicon MOSFETMCH6616Ultrahigh-Speed Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm Ultrahigh-speed switching. 2173A 2.5V drive.[MCH6616] Composite type with 2 MOSFETs contained in a single0.30.15package, facilitating high-density mounting.4 5 63 2 1 1 : Source12 : Gate10.65
0.4. Size:276K infineon
irf6616pbf irf6616trpbf.pdf
PD - 96100IRF6616PbFIRF6616TRPbFDirectFET Power MOSFET Typical values (unless otherwise specified)l RoHS compliant containing no lead or bormide VDSS VGS RDS(on) RDS(on) l Low Profile (
0.5. Size:717K aosemi
aous66616.pdf
AOUS66616TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 92A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
0.6. Size:732K aosemi
aod66616.pdf
AOD6661660V N-Channel AlphaSGT TMGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 70A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
0.7. Size:785K aosemi
aot66616l.pdf
AOT66616L/AOB66616LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
0.8. Size:709K aosemi
aow66616.pdf
AOW66616TM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
0.9. Size:788K aosemi
aob66616l.pdf
AOT66616L/AOB66616LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 140A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
0.10. Size:723K aosemi
aotf66616l.pdf
AOTF66616LTM60V N-Channel AlphaSGTGeneral Description Product SummaryVDS60V Trench Power MOSFET - AlphaSGTTM technology ID (at VGS=10V) 72.5A Low RDS(ON) Excellent Gate Charge x RDS(ON) Product (FOM) RDS(ON) (at VGS=10V)
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