8680 Todos los transistores

 ..1. Size:2265K  goford
 8680.pdf

GOFORD 8680 DESCRIPTION The 8680 uses advanced trench technology and VDSS RDS(ON) ID design to provide excellent R with low gate DS(ON) 6.8 86V m 80A charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =86V,ID =80A RDS(ON)

 0.1. Size:266K  fairchild semi
 fdms8680.pdf

October 2014 FDMS8680 tm N-Channel PowerTrench MOSFET 30V, 35A, 7.0m Features General Description Max rDS(on) = 7.0m at VGS = 10V, ID = 14A The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 11.0m at VGS = 4.5V, ID = 11.5A package technologies have been combined to offer the lowest Advance

 0.2. Size:1527K  goford
 8680a.pdf

GOFORD 8680A General Description The 8680A is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Schematic Diagram Features RDS(ON) VDSS ID @10V (typ) 80V 92A 6.6 m Marking and pin assignment Special D