8680 Specs and Replacement
Type Designator: 8680
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 86 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 110 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO220
8680 substitution
- MOSFET ⓘ Cross-Reference Search
8680 datasheet
8680.pdf
GOFORD 8680 DESCRIPTION The 8680 uses advanced trench technology and VDSS RDS(ON) ID design to provide excellent R with low gate DS(ON) 6.8 86V m 80A charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =86V,ID =80A RDS(ON) ... See More ⇒
fdms8680.pdf
October 2014 FDMS8680 tm N-Channel PowerTrench MOSFET 30V, 35A, 7.0m Features General Description Max rDS(on) = 7.0m at VGS = 10V, ID = 14A The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 11.0m at VGS = 4.5V, ID = 11.5A package technologies have been combined to offer the lowest Advance... See More ⇒
8680a.pdf
GOFORD 8680A General Description The 8680A is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Schematic Diagram Features RDS(ON) VDSS ID @10V (typ) 80V 92A 6.6 m Marking and pin assignment Special D... See More ⇒
Detailed specifications: 3400 , 3401 , 3415 , 6616 , 6703 , 6760 , 7080 , 8070 , 20N60 , G29 , G33 , G37 , G3N15 , G50N10 , G60N04 , G66 , G66-3L .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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