8680 Datasheet and Replacement. Cross Reference Search

8680 Datasheet (PDF)

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GOFORD8680DESCRIPTIONThe 8680 uses advanced trench technology andVDSS RDS(ON) IDdesign to provide excellent R with low gateDS(ON)6.886V m 80Acharge. It can be used in a wide variety ofapplications.GENERAL FEATURES VDS =86V,ID =80ARDS(ON)

0.1. Size:266K fairchild semi
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October 2014FDMS8680tmN-Channel PowerTrench MOSFET 30V, 35A, 7.0mFeatures General Description Max rDS(on) = 7.0m at VGS = 10V, ID = 14A The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 11.0m at VGS = 4.5V, ID = 11.5Apackage technologies have been combined to offer the lowest Advance

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GOFORD8680AGeneral Description The 8680A is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Schematic DiagramFeatures RDS(ON) VDSS ID @10V (typ) 80V 92A 6.6 mMarking and pin assignment Special D

Datasheet: 3400 , 3401 , 3415 , 6616 , 6703 , 6760 , 7080 , 8070 , 20N60 , G29 , G33 , G37 , G3N15 , G50N10 , G60N04 , G66 , G66-3L .