8680 - параметры транзистора MOSFET, его аналоги, datasheet

8680 Datasheet (PDF)

..1. Size:2265K goford
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GOFORD8680DESCRIPTIONThe 8680 uses advanced trench technology andVDSS RDS(ON) IDdesign to provide excellent R with low gateDS(ON)6.886V m 80Acharge. It can be used in a wide variety ofapplications.GENERAL FEATURES VDS =86V,ID =80ARDS(ON)

0.1. Size:266K fairchild semi
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October 2014FDMS8680tmN-Channel PowerTrench MOSFET 30V, 35A, 7.0mFeatures General Description Max rDS(on) = 7.0m at VGS = 10V, ID = 14A The FDMS8680 has been designed to minimize losses in power conversion application. Advancements in both silicon and Max rDS(on) = 11.0m at VGS = 4.5V, ID = 11.5Apackage technologies have been combined to offer the lowest Advance

0.2. Size:1527K goford
8680a.pdf pdf_icon

GOFORD8680AGeneral Description The 8680A is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching especially for E-Bike controller applications. Schematic DiagramFeatures RDS(ON) VDSS ID @10V (typ) 80V 92A 6.6 mMarking and pin assignment Special D

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , AON7506 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .