G69 Todos los transistores

 ..1. Size:1417K  goford
 g69.pdf

GOFORD G69 Description D The G69 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S General Features Schematic diagram VDSS RDS(ON) ID @ - 4.5V (typ) -16A -12V 11.5m Advanced trench MOSFET pr

 0.1. Size:138K  diodes
 dmg6968u.pdf

DMG6968U N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT-23 25m @ VGS = 4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 29m @ VGS = 2.5V Moisture Sensitivity Level 1 per J-STD-020D 36m @ VGS = 1.8V Terminals Finish Matte Tin annealed

 0.2. Size:137K  diodes
 dmg6968uts.pdf

DMG6968UTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case TSSOP-8 Low Input Capacitance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections See

 0.3. Size:146K  diodes
 dmg6968udm.pdf

DMG6968UDM DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low Gate Charge Case SOT-26 Low RDS(ON) Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 24m @VGS = 4.5V Moisture Sensitivity Level 1 per J-STD-020D 28m @

 0.4. Size:621K  panasonic
 fg694301.pdf

This product complies with the RoHS Directive (EU 2002/95/EC). FG694301 Silicon N-channel MOS FET (FET1) Silicon P-channel MOS FET (FET2) For switching circuits Overview Package Code FG694301 is N-P channel dual type small signal MOS FET employed small size surface mounting package. SSMini6-F3-B Pin Name Features 1 Source (FET1) 4 Source (FET2) 2 Gate (FET1)

 0.5. Size:84K  tysemi
 dmg6968u.pdf

 0.6. Size:204K  lzg
 3cg698.pdf

2SB698(3CG698) PNP /SILICON PNP TRANSISTOR 1W Purpose 1W AF output, electronic governor, DC-DC converter applications. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V -25 V CBO V -20 V CEO V -5.0 V EBO I -0.7 A C I -1.5 A CP P 600 mW C

 0.7. Size:836K  cn vbsemi
 dmg6968u.pdf

DMG6968U www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) G

 0.8. Size:1674K  cn vbsemi
 dmg6968u-7.pdf

DMG6968U-7 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23)