GOFORD G69Description DThe G69 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SGeneral Features Schematic diagram VDSS RDS(ON) ID @- 4.5V (typ)-16A-12V11.5m Advanced trench MOSFET pr

DMG6968UN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 25m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 29m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 36m @ VGS = 1.8V Terminals: Finish Matte Tin annealed

DMG6968UTSDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: TSSOP-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See

DMG6968UDMDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low Gate Charge Case: SOT-26 Low RDS(ON): Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 24m @VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D 28m @

This product complies with the RoHS Directive (EU 2002/95/EC).FG694301Silicon N-channel MOS FET (FET1)Silicon P-channel MOS FET (FET2)For switching circuits Overview Package CodeFG694301 is N-P channel dual type small signal MOS FET employed small size surface mounting package. SSMini6-F3-B Pin Name Features 1: Source (FET1) 4: Source (FET2) 2: Gate (FET1)

Product specificationDMG6968UN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 25m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 29m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020 36m @ VGS = 1.8V Terminals: Finish

2SB698(3CG698) PNP /SILICON PNP TRANSISTOR :1W Purpose: 1W AF output, electronic governor, DC-DC converter applications. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -25 V CBO V -20 V CEO V -5.0 V EBO I -0.7 A C I -1.5 A CPP 600 mW C

DMG6968Uwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

DMG6968U-7www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)