G69 Datasheet and Replacement

GOFORD G69Description DThe G69 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SGeneral Features Schematic diagram VDSS RDS(ON) ID @- 4.5V (typ)-16A-12V11.5m Advanced trench MOSFET pr

DMG6968UN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 25m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 29m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 36m @ VGS = 1.8V Terminals: Finish Matte Tin annealed

DMG6968UTSDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: TSSOP-8 Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminal Connections: See

DMG6968UDMDUAL N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low Gate Charge Case: SOT-26 Low RDS(ON): Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 24m @VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D 28m @

This product complies with the RoHS Directive (EU 2002/95/EC).FG694301Silicon N-channel MOS FET (FET1)Silicon P-channel MOS FET (FET2)For switching circuits Overview Package CodeFG694301 is N-P channel dual type small signal MOS FET employed small size surface mounting package. SSMini6-F3-B Pin Name Features 1: Source (FET1) 4: Source (FET2) 2: Gate (FET1)

Product specificationDMG6968UN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 25m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 29m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020 36m @ VGS = 1.8V Terminals: Finish

2SB698(3CG698) PNP /SILICON PNP TRANSISTOR :1W Purpose: 1W AF output, electronic governor, DC-DC converter applications. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -25 V CBO V -20 V CEO V -5.0 V EBO I -0.7 A C I -1.5 A CPP 600 mW C

DMG6968Uwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G

DMG6968U-7www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)