G80N06 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: G80N06  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 85 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm

Encapsulados: TO220 TO251 TO252

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G80N06 datasheet

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 g80n06 to251.pdf pdf_icon

G80N06

GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @ (typ) 4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren

 ..2. Size:1155K  goford
 g80n06 to220.pdf pdf_icon

G80N06

GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @ (typ) 4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre

 ..3. Size:1149K  goford
 g80n06 to252.pdf pdf_icon

G80N06

GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @ (typ) 4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre

 0.1. Size:544K  cn minos
 mpg80n06p mdt80n06d.pdf pdf_icon

G80N06

60V N-Channel Power MOSFET DESCRIPTION The MPG80N06 uses advanced trench technology to provide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. KEY CHARACTERISTICS V = 60V,I = 80A DS D R

MOSTRAR MÁS

Otros transistores... G37, G3N15, G50N10, G60N04, G66, G66-3L, G68, G69, IRFZ44, G96, GD1, G22, G23, G11, G16, G17, 03N06