G80N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: G80N06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 85 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 80 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 320 pF
Resistencia drenaje-fuente RDS(on): 0.012 Ohm
Empaquetado / Estuche: TO220, TO251, TO252
Búsqueda de reemplazo de MOSFET G80N06
G80N06 Datasheet (PDF)
1.1. g80n06 to251.pdf 
Size:1108K _goford
GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features ● VDSS RDS(ON) ID Schematic diagram @ (typ) 4.5V 60V m 9.5 Ω 80 A ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and curren
1.2. g80n06 to220.pdf Size:1155K _goford
GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features ● VDSS RDS(ON) ID Schematic diagram @ (typ) 4.5V 60V m 9.5 Ω 80 A ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and curre
1.3. g80n06 to252.pdf Size:1149K _goford
GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features ● VDSS RDS(ON) ID Schematic diagram @ (typ) 4.5V 60V m 9.5 Ω 80 A ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and curre
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
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