G80N06 Todos los transistores

 

G80N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: G80N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: TO220 TO251 TO252
 

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G80N06 Datasheet (PDF)

 ..1. Size:1108K  goford
 g80n06 to251.pdf pdf_icon

G80N06

GOFORDG80N06Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @ (typ)4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren

 ..2. Size:1155K  goford
 g80n06 to220.pdf pdf_icon

G80N06

GOFORDG80N06Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @ (typ)4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre

 ..3. Size:1149K  goford
 g80n06 to252.pdf pdf_icon

G80N06

GOFORDG80N06Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @ (typ)4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre

 0.1. Size:544K  cn minos
 mpg80n06p mdt80n06d.pdf pdf_icon

G80N06

60V N-Channel Power MOSFETDESCRIPTIONThe MPG80N06 uses advanced trench technology to provideexcellent R , low gate charge. It can be used in a wideDS(ON)variety of applications.KEY CHARACTERISTICS V = 60V,I = 80ADS DR

MOSTRAR MÁS

Otros transistores... G37 , G3N15 , G50N10 , G60N04 , G66 , G66-3L , G68 , G69 , 10N60 , G96 , GD1 , G22 , G23 , G11 , G16 , G17 , 03N06 .

 

 
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