G80N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: G80N06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 85 W
Tensión drenaje-fuente (Vds): 60 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 80 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 8 nS
Conductancia de drenaje-sustrato (Cd): 320 pF
Resistencia drenaje-fuente RDS(on): 0.012 Ohm
Empaquetado / Estuche: TO220_TO251_TO252
Búsqueda de reemplazo de MOSFET G80N06
G80N06 Datasheet (PDF)
1.1. g80n06 to252.pdf 
Size:1149K _goford
GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features ● VDSS RDS(ON) ID Schematic diagram @ (typ) 4.5V 60V m 9.5 Ω 80 A ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and curre
1.2. g80n06 to220.pdf Size:1155K _goford
GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features ● VDSS RDS(ON) ID Schematic diagram @ (typ) 4.5V 60V m 9.5 Ω 80 A ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and curre
1.3. g80n06 to251.pdf Size:1108K _goford
GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features ● VDSS RDS(ON) ID Schematic diagram @ (typ) 4.5V 60V m 9.5 Ω 80 A ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and curren
Otros transistores... IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: RJK0329DPB-00 | RJK0323JPD | RJK005N03T146 | RJK005N03FRA | RJJ0601JPN | RJJ0601JPE | RHU003N03FRA | RHU003N03 | RHU002N06FRA | RHU002N06 | RHP030N03T100 | RHP020N06T100 | RHK005N03T146 | RHK005N03FRA | RHK003N06T146 |