G80N06 - аналоги и даташиты транзистора

 

G80N06 - Даташиты. Аналоги. Основные параметры


   Наименование производителя: G80N06
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 85 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 60 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 8 ns
   Cossⓘ - Выходная емкость: 320 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.012 Ohm
   Тип корпуса: TO220 TO251 TO252
 

 Аналог (замена) для G80N06

   - подбор ⓘ MOSFET транзистора по параметрам

 

G80N06 Datasheet (PDF)

 ..1. Size:1108K  goford
 g80n06 to251.pdf pdf_icon

G80N06

GOFORDG80N06Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @ (typ)4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren

 ..2. Size:1155K  goford
 g80n06 to220.pdf pdf_icon

G80N06

GOFORDG80N06Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @ (typ)4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre

 ..3. Size:1149K  goford
 g80n06 to252.pdf pdf_icon

G80N06

GOFORDG80N06Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @ (typ)4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre

 0.1. Size:544K  cn minos
 mpg80n06p mdt80n06d.pdf pdf_icon

G80N06

60V N-Channel Power MOSFETDESCRIPTIONThe MPG80N06 uses advanced trench technology to provideexcellent R , low gate charge. It can be used in a wideDS(ON)variety of applications.KEY CHARACTERISTICS V = 60V,I = 80ADS DR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... G37 , G3N15 , G50N10 , G60N04 , G66 , G66-3L , G68 , G69 , 10N60 , G96 , GD1 , G22 , G23 , G11 , G16 , G17 , 03N06 .

History: 25P10G | 2SK1053 | LF2802A | LND150K1 | MMBFJ270 | CS8205A | MMBF5459

 

 
Back to Top

 


 
.