All MOSFET. G80N06 Datasheet

 

G80N06 Datasheet and Replacement


   Type Designator: G80N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 85 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 320 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO220 TO251 TO252
 

 G80N06 substitution

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G80N06 Datasheet (PDF)

 ..1. Size:1108K  goford
 g80n06 to251.pdf pdf_icon

G80N06

GOFORDG80N06Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @ (typ)4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren

 ..2. Size:1155K  goford
 g80n06 to220.pdf pdf_icon

G80N06

GOFORDG80N06Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @ (typ)4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre

 ..3. Size:1149K  goford
 g80n06 to252.pdf pdf_icon

G80N06

GOFORDG80N06Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @ (typ)4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre

Datasheet: G37 , G3N15 , G50N10 , G60N04 , G66 , G66-3L , G68 , G69 , 10N60 , G96 , GD1 , G22 , G23 , G11 , G16 , G17 , 03N06 .

History: JANSR2N7402 | IRF7424

Keywords - G80N06 MOSFET datasheet

 G80N06 cross reference
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