G80N06 PDF and Equivalents Search

 

G80N06 Specs and Replacement

Type Designator: G80N06

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 85 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO220 TO251 TO252

G80N06 substitution

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G80N06 datasheet

 ..1. Size:1108K  goford
 g80n06 to251.pdf pdf_icon

G80N06

GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @ (typ) 4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curren... See More ⇒

 ..2. Size:1155K  goford
 g80n06 to220.pdf pdf_icon

G80N06

GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @ (typ) 4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre... See More ⇒

 ..3. Size:1149K  goford
 g80n06 to252.pdf pdf_icon

G80N06

GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent R with low gate charge. It can be DS(ON) used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @ (typ) 4.5V 60V m 9.5 80 A High density cell design for ultra low Rdson Fully characterized avalanche voltage and curre... See More ⇒

 0.1. Size:544K  cn minos
 mpg80n06p mdt80n06d.pdf pdf_icon

G80N06

60V N-Channel Power MOSFET DESCRIPTION The MPG80N06 uses advanced trench technology to provide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. KEY CHARACTERISTICS V = 60V,I = 80A DS D R ... See More ⇒

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Detailed specifications: G37 , G3N15 , G50N10 , G60N04 , G66 , G66-3L , G68 , G69 , IRFP260N , G96 , GD1 , G22 , G23 , G11 , G16 , G17 , 03N06 .

History: IRFML8244

Keywords - G80N06 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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