G96 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: G96
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 18 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 35 nS
Cossⓘ - Capacitancia de salida: 680 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: DFN3X3-8L
Búsqueda de reemplazo de MOSFET G96
G96 Datasheet (PDF)
g96.pdf
GOFORD G96Description DThe G96 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SSchematic diagram General Features VDSS RDS(ON) ID @ (typ)-4.5V -16A-12V11.5m Advanced trench MOSFET pro
dmg96303.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG96303Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B Eco-friendly Halogen-free package
dmg96401.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG96401Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56401 in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B E
dmg9640t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG9640TSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization of sets, reduction of component
dmg96301.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG96301Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56301 in SSMini5 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B
dmg96403.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG96403Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56403 in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B
dmg96404.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG96404Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56404 in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B Eco
dmg9640n.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG9640NSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG5640N in SSMini6 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization
dmg964h3.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG964H3Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG564H3 in SSMini6 type package Package Features Code Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B E
dmg96405.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG96405Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56405 in SSMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Cont
dmg96406.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG96406Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56406 in SSMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contribu
dmg964h1.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG964H1Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B Eco-friendly Halogen-free package
dmg963hc.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG963HCSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B Eco-friendly Halogen-free package
dmg96402.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG96402Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56402 in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B
dmg96302.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG96302Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56302 in SSMini5 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B
dmg963h1.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG963H1Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG563H1 in SSMini5 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B
dmg964h5.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG964H5Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B Eco-friendly Halogen-free packagePa
dmg963he.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG963HESilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B Eco-friendly Halogen-free package
dmg963hd.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG963HDSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B Eco-friendly Halogen-free package
dmg9640m.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG9640MSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG5640M in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B
dmg963h5.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DMG963H5Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG563H5 in SSMini5 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B
3cg965.pdf
2SA965(3CG965) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications, driver stage amplifier applications. : 2SC2235(3DG2235) Features: Complementary pair with 2SC2235(3DG2235). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -120 V
3cg966.pdf
2SA966(3CG966) PNP /SILICON PNP TRANSISTOR :/Purpose: AF power amplifier applications. : 2SC2236(3DG2236), 3W Features: Complementary to 2SC2236(3DG2236) and 3 Watts output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V CBO
3cg966t.pdf
2SA966T(3CG966T) PNP /SILICON PNP TRANSISTOR :/Purpose: AF power amplifier applications. : 2SC2236T(3DG2236T) Features: Complementary to 2SC2236T(3DG2236T). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V CBO V -30 V CEO V -5.0 V EBO I -1.5 A C
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918