G96 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

GOFORD G96Description DThe G96 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SSchematic diagram General Features VDSS RDS(ON) ID @ (typ)-4.5V -16A-12V11.5m Advanced trench MOSFET pro

This product complies with the RoHS Directive (EU 2002/95/EC).DMG96303Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B Eco-friendly Halogen-free package

This product complies with the RoHS Directive (EU 2002/95/EC).DMG96401Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56401 in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B E

This product complies with the RoHS Directive (EU 2002/95/EC).DMG9640TSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization of sets, reduction of component

This product complies with the RoHS Directive (EU 2002/95/EC).DMG96301Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56301 in SSMini5 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B

This product complies with the RoHS Directive (EU 2002/95/EC).DMG96403Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56403 in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B

This product complies with the RoHS Directive (EU 2002/95/EC).DMG96404Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56404 in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B Eco

This product complies with the RoHS Directive (EU 2002/95/EC).DMG9640NSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG5640N in SSMini6 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization

This product complies with the RoHS Directive (EU 2002/95/EC).DMG964H3Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG564H3 in SSMini6 type package Package Features Code Low collector-emitter saturation voltage VCE(sat) Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B E

This product complies with the RoHS Directive (EU 2002/95/EC).DMG96405Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56405 in SSMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Cont

This product complies with the RoHS Directive (EU 2002/95/EC).DMG96406Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56406 in SSMini6 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contribu

This product complies with the RoHS Directive (EU 2002/95/EC).DMG964H1Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B Eco-friendly Halogen-free package

This product complies with the RoHS Directive (EU 2002/95/EC).DMG963HCSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B Eco-friendly Halogen-free package

This product complies with the RoHS Directive (EU 2002/95/EC).DMG96402Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56402 in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B

This product complies with the RoHS Directive (EU 2002/95/EC).DMG96302Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56302 in SSMini5 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B

This product complies with the RoHS Directive (EU 2002/95/EC).DMG963H1Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG563H1 in SSMini5 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B

This product complies with the RoHS Directive (EU 2002/95/EC).DMG964H5Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B Eco-friendly Halogen-free packagePa

This product complies with the RoHS Directive (EU 2002/95/EC).DMG963HESilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B Eco-friendly Halogen-free package

This product complies with the RoHS Directive (EU 2002/95/EC).DMG963HDSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B Eco-friendly Halogen-free package

This product complies with the RoHS Directive (EU 2002/95/EC).DMG9640MSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG5640M in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B

This product complies with the RoHS Directive (EU 2002/95/EC).DMG963H5Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG563H5 in SSMini5 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B

2SA965(3CG965) PNP /SILICON PNP TRANSISTOR : Purpose: Power amplifier applications, driver stage amplifier applications. : 2SC2235(3DG2235) Features: Complementary pair with 2SC2235(3DG2235). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -120 V

2SA966(3CG966) PNP /SILICON PNP TRANSISTOR :/Purpose: AF power amplifier applications. : 2SC2236(3DG2236), 3W Features: Complementary to 2SC2236(3DG2236) and 3 Watts output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V CBO

2SA966T(3CG966T) PNP /SILICON PNP TRANSISTOR :/Purpose: AF power amplifier applications. : 2SC2236T(3DG2236T) Features: Complementary to 2SC2236T(3DG2236T). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V -30 V CBO V -30 V CEO V -5.0 V EBO I -1.5 A C