G96 PDF and Equivalents Search

 

G96 Specs and Replacement

Type Designator: G96

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 12 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 680 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: DFN3X3-8L

G96 substitution

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G96 datasheet

 ..1. Size:1399K  goford
g96.pdf pdf_icon

G96

GOFORD G96 Description D The G96 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages .This device is suitable for use as a load switching application and a wide variety of other applications. S Schematic diagram General Features VDSS RDS(ON) ID @ (typ) -4.5V -16A -12V 11.5m Advanced trench MOSFET pro... See More ⇒

 0.1. Size:483K  panasonic
dmg96303.pdf pdf_icon

G96

This product complies with the RoHS Directive (EU 2002/95/EC). DMG96303 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B Eco-friendly Halogen-free package ... See More ⇒

 0.2. Size:476K  panasonic
dmg96401.pdf pdf_icon

G96

This product complies with the RoHS Directive (EU 2002/95/EC). DMG96401 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits DMG56401 in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B E... See More ⇒

 0.3. Size:477K  panasonic
dmg9640t.pdf pdf_icon

G96

This product complies with the RoHS Directive (EU 2002/95/EC). DMG9640T Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization of sets, reduction of component ... See More ⇒

Detailed specifications: G3N15 , G50N10 , G60N04 , G66 , G66-3L , G68 , G69 , G80N06 , AO3400 , GD1 , G22 , G23 , G11 , G16 , G17 , 03N06 , 05N06 .

History: AP95T07BGS-HF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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