All MOSFET. G96 Datasheet

 

G96 Datasheet and Replacement


   Type Designator: G96
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 18 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 12 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DFN3X3-8L
 

 G96 substitution

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G96 Datasheet (PDF)

 ..1. Size:1399K  goford
g96.pdf pdf_icon

G96

GOFORD G96Description DThe G96 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages .This device is suitable for use as a load switching application and a wide variety of other applications. SSchematic diagram General Features VDSS RDS(ON) ID @ (typ)-4.5V -16A-12V11.5m Advanced trench MOSFET pro

 0.1. Size:483K  panasonic
dmg96303.pdf pdf_icon

G96

This product complies with the RoHS Directive (EU 2002/95/EC).DMG96303Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini5-F4-B Eco-friendly Halogen-free package

 0.2. Size:476K  panasonic
dmg96401.pdf pdf_icon

G96

This product complies with the RoHS Directive (EU 2002/95/EC).DMG96401Silicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuitsDMG56401 in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B E

 0.3. Size:477K  panasonic
dmg9640t.pdf pdf_icon

G96

This product complies with the RoHS Directive (EU 2002/95/EC).DMG9640TSilicon NPN epitaxial planar type (Tr1)Silicon PNP epitaxial planar type (Tr2)For digital circuits Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization of sets, reduction of component

Datasheet: G3N15 , G50N10 , G60N04 , G66 , G66-3L , G68 , G69 , G80N06 , IRF3710 , GD1 , G22 , G23 , G11 , G16 , G17 , 03N06 , 05N06 .

History: STM8020 | FQA11N90F109 | JANSR2N7402 | SFF9140

Keywords - G96 MOSFET datasheet

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