G22 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: G22
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 4.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 18 nS
Cossⓘ - Capacitancia de salida: 300 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.033 Ohm
Encapsulados: SOT23
Búsqueda de reemplazo de G22 MOSFET
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G22 datasheet
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Otros transistores... G60N04 , G66 , G66-3L , G68 , G69 , G80N06 , G96 , GD1 , IRF3710 , G23 , G11 , G16 , G17 , 03N06 , 05N06 , 100N03 , 100P03 .
History: IRFP3206
History: IRFP3206
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