G22 - описание и поиск аналогов

BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 04 4 March 2010 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(A

BLF4G22-130; BLF4G22LS-130 UHF power LDMOS transistor Rev. 01 3 July 2007 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Tcase = 25 C in a common source class-AB test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR (MHz) (V) (W

BLF4G22-100; BLF4G22S-100 UHF power LDMOS transistor Rev. 01 10 January 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1 Typical performance Tcase =25 C; in a common source class-AB test circuit; IDq = 900 mA; typical values Mode of operation f VDS PL Gp

BLF6G22-180RN; BLF6G22LS-180RN Power LDMOS transistor Rev. 01 20 November 2008 Product data sheet 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation f VDS PL(AV) G

BLM6G22-30; BLM6G22-30G W-CDMA 2100 MHz to 2200 MHz power MMIC Rev. 4 7 March 2011 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1). Table 1. Typical performance Typical RF performance at Th

BLD6G22L-50; BLD6G22LS-50 W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistor Rev. 3 17 August 2010 Product data sheet 1. Product profile 1.1 General description The BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXP s state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequ

BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 1 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f

BLF6G22-45 Power LDMOS transistor Rev. 02 21 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz) (

BLF3G22-30 UHF power LDMOS transistor Rev. 01 21 June 2007 Product data sheet 1. Product profile 1.1 General description 30 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz Table 1. Typical class-AB RF performance IDq = 450 mA; Th = 25 C in a common source test circuit. Mode of operation f1 f2 VDS IDq PL(PEP) PL(AV) Gp D IMD ACPR I

BLF6G22S-45 Power LDMOS transistor Rev. 02 17 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MHz)

BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Test signal f IDq V

BLF6G22L-40P; BLF6G22LS-40P Power LDMOS transistor Rev. 1 22 September 2011 Product data sheet 1. Product profile 1.1 General description LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

BLF6G22LS-130 Power LDMOS transistor Rev. 01 23 May 2008 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

BLF6G22LS-75 Power LDMOS transistor Rev. 02 14 April 2010 Product data sheet 1. Product profile 1.1 General description 75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

BLF6G22L-40BN Power LDMOS transistor Rev. 1 30 August 2010 Product data sheet 1. Product profile 1.1 General description 40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D ACPR (MH

BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I

BLF6G22LS-100 Power LDMOS transistor Rev. 3 12 November 2010 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f VDS PL(AV) Gp D IMD3 A

BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 3 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation f I

BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. Mode of operation

SiHG22N60E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 650 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Qg max. (nC) 86 Ultra low gate charge (Qg) Qgs (nC) 11 Available Avalanche energy rated (UIS) Qgd (

SiHG22N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 700 Low input capacitance (Ciss) RDS(on) max. at 25 C ( ) VGS = 10 V 0.18 Reduced switching and conduction losses Available Qg max. (nC) 110 Ultra low gate charge (Qg) Qgs (nC) 15 Avalanche energy rated (UIS) Availab

SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.230 - Low Input Capacitance (Ciss) Qg max. (nC) 98 - Reduced Capacitive Switching Losses Qgs (nC) 13 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS)

SiHG22N60S www.vishay.com Vishay Siliconix S Series Power MOSFET FEATURES PRODUCT SUMMARY Generation one VDS at TJ max. (V) 650 High EAR capability RDS(on) max. at 25 C ( ) VGS = 10 V 0.190 Lower figure-of-merit Ron x Qg Qg max. (nC) 98 100 % avalanche tested Qgs (nC) 17 Available Qgd (nC) 25 Ultra low Ron Configuration Single dV/dt ruggedness U

CEG2288 Dual N-Channel Enhancement Mode Field Effect Transistor FEATURES 20V, 6.2A, RDS(ON) = 24m @VGS = 4.5V. RDS(ON) = 34m @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. D 1 8 D Lead free product is acquired. 2 7 S2 S1 TSSOP-8 Package. S1 3 6 S2 4 G1 5 G2 G2 S2 S2 G1 D S1 S1 D TSSOP-8 ABSOLUTE MAXI

KSD227(BR3DG227K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features KSA642 BR3CG642K Complement to KSA642(BR3CG642K),PC=400Mw. / Applications Low frequency power amplifier.

3DG2219(2N2219) NPN PCM TA=25 800 mW ICM 800 mA Tjm 150 Tstg -55 150 V(BR)CBO ICB 10 A 75 V V(BR)CEO ICE 10mA 40 V V(BR)EBO IEB 10 A 6.0 V ICBO VCB=60V 10 nA IEBO VCB=3.0V 10 nA IC=0.5A VCEsat 1.0 V IB=0.05A VCE=10V hFE 100 300 IC=0.15A

3DG2218A NPN PCM TA=25 800 mW ICM 800 mA Tjm 175 Tstg -55 150 V(BR)CEO ICE=10mA 50 V V(BR)CBO ICB=10 A 75 V V(BR)EBO IEB=10 A 6 V ICEO VCE=50V 10 A ICBO VCB=60V 10 A IEBO VEB=6V 10 A VBEsat 2.0 V IC=500mA IB=5

3CG22 PNP A B C D E F G PCM 500 mW ICM 100 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 30 40 50 65 80 95 V V(BR)CEO ICE=0.1mA 15 25 35 50 65 80 95 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1

2SC2274(3DG2274) 2SC2274K(3DG2274K) NPN /SILICON NPN TRANSISTOR Purpose Low frequency power amplifier applications. Features High breakdown voltage, high current, low saturation voltage. /Absolute Maximum Ratings(Ta=25 ) Symbol R

2SC2216M(3DG2216M) NPN /SILICON NPN TRANSISTOR Purpose TV final picture IF amplifier applications. ,h FE Features High gain, good h linearity. FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 50 V CBO V 45 V CEO V 4.0 V EB

2SC2274(3DG2274) 2SC2274K(3DG2274K) NPN /SILICON NPN TRANSISTOR Purpose Low frequency power amplifier applications. Features High breakdown voltage, high current, low saturation voltage. /Absolute Maximum Ratings(Ta=25 ) Symbol R

2SC2240(3DG2240) NPN /SILICON NPN TRANSISTOR Purpose Low noise audio amplifier applications. , , Features Low noise, high DC current gain, high breakdown voltage. /Absolute Maximum Ratings(Ta=25 ) Symbol Rating Unit V 120

2SC2235(3DG2235) NPN /SILICON NPN TRANSISTOR , Purpose Audio frequency amplifier and driver stage amplifier Applications. 2SA965(3CG965) /Features Complementary to 2SA965(3CG965). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 120 V CBO V 120 V

2SC2216(3DG2216) NPN /SILICON NPN TRANSISTOR Purpose TV final picture IF amplifier applications. ,h FE Features High gain, good h linearity. FE /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 50 V CBO V 45 V CEO V 4.0 V EBO

2N2222(3DG2222) NPN /SILICON NPN TRANSISTOR Purpose General purpose amplifier. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 60 V CBO V 30 V CEO V 5.0 V EBO I 600 mA C P 625 mW C T 150 j T -55 150 stg /Electrical characteristics(Ta

2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR , /Purpose High voltage general amplifier, color TV class B sound output applications. V , /Features High voltage, high DC current gain. CEO /Absolute maximum ratings(Ta=25 )

2SC2236(3DG2236) NPN /SILICON NPN TRANSISTOR /Purpose Audio frequency power amplifier applications. 2SA966(3CG966) 3W /Features Complementary to 2SA966(3CG966) And 3 watts output applications. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 30 V

2N2222A(3DG2222A) NPN /SILICON NPN TRANSISTOR Purpose General purpose amplifier. /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 75 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625 mW C T 150 j T -55 150 stg /Electrical characteristics(

2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR , /Purpose High voltage general amplifier, color TV class B sound output applications. V , /Features High voltage, high DC current gain. CEO /Absolute maximum ratings(Ta=25 )

2SC2229(3DG2229) NPN /SILICON NPN TRANSISTOR , Purpose TV video output,high voltage switching and driver stage of audio amplifier applications. , , Features High breakdown voltage, low output capacitance, high f . T /

MMG225WB170B6EN 1700V 225A IGBT Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLICATIONS

MMG225WB120B6TN 1200V 225A IGBT Module May 2015 Version 01 RoHS Compliant PRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense included APPLICATIONS AC motor control Motion/servo c

SHD225715 SENSITRON SHDCG225715 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4340, REV. - LOW RDS HERMETIC POWER MOSFET - N-CHANNEL FEATURES 60 Volt, 0.008 Ohm, 110A MOSFET for Glidcop version Isolated Hermetic Metal Package Ultra Low RDS (on) Available with Ceramic Seals and Glidcop leads, use part number SHDCG225715 MAXIMUM RATINGS ALL RATINGS ARE AT TC =

SENSITRON SHD225509 SHDC225509 SEMICONDUCTOR SHDG225509 TECHNICAL DATA DATA SHEET 4964, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES 1000 Volt, 6A, 2 Ohm, MOSFET Isolated Hermetic Metal Package Fast intrinsic Rectifier Low RDS (on) Ceramic Seals with Glidcop leads (SHDG225509) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25 C UNLESS OTHERWISE S