G22 Datasheet and Replacement

GOFORDG22Description DThe G22 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate Gvoltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. SGeneral Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @2.5V (Typ)20V G2222 m 33m 4.5 A

BLF6G22-180PN; BLF6G22LS-180PNPower LDMOS transistorRev. 04 4 March 2010 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(A

BLF4G22-130; BLF4G22LS-130UHF power LDMOS transistorRev. 01 3 July 2007 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceTcase = 25 C in a common source class-AB test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR(MHz) (V) (W

BLF4G22-100; BLF4G22S-100UHF power LDMOS transistorRev. 01 10 January 2006 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1: Typical performanceTcase =25C; in a common source class-AB test circuit; IDq = 900 mA; typical valuesMode of operation f VDS PL Gp

BLF6G22-180RN;BLF6G22LS-180RNPower LDMOS transistorRev. 01 20 November 2008 Product data sheet1. Product profile1.1 General description180 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a class-AB production test circuit.Mode of operation f VDS PL(AV) G

BLM6G22-30; BLM6G22-30GW-CDMA 2100 MHz to 2200 MHz power MMICRev. 4 7 March 2011 Product data sheet1. Product profile1.1 General description30 W LDMOS 2-stage power MMIC for base station applications at frequencies from 2100 MHz to 2200 MHz. Available in gull wing for surface mount (SOT822-1) or flat lead (SOT834-1).Table 1. Typical performanceTypical RF performance at Th

BLD6G22L-50; BLD6G22LS-50W-CDMA 2110 MHz to 2170 MHz fully integrated Doherty transistorRev. 3 17 August 2010 Product data sheet1. Product profile1.1 General descriptionThe BLD6G22L-50 and BLD22LS-50 incorporate a fully integrated Doherty solution using NXPs state of the art GEN6 LDMOS technology. This device is perfectly suited for CDMA base station applications at frequ

BLF7G22L-200; BLF7G22LS-200Power LDMOS transistorRev. 3 1 April 2011 Preliminary data sheet1. Product profile1.1 General description200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f

BLF6G22-45Power LDMOS transistorRev. 02 21 April 2008 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MHz) (

BLF3G22-30UHF power LDMOS transistorRev. 01 21 June 2007 Product data sheet1. Product profile1.1 General description30 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHzTable 1. Typical class-AB RF performanceIDq = 450 mA; Th = 25 C in a common source test circuit.Mode of operation f1 f2 VDS IDq PL(PEP) PL(AV) Gp D IMD ACPR I

BLF6G22S-45Power LDMOS transistorRev. 02 17 April 2008 Product data sheet1. Product profile1.1 General description45 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MHz)

BLF7G22L-100P; BLF7G22LS-100PPower LDMOS transistorRev. 3 2 January 2012 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Test signal f IDq V

BLF6G22L-40P; BLF6G22LS-40PPower LDMOS transistorRev. 1 22 September 2011 Product data sheet1. Product profile1.1 General descriptionLDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz and 1805 MHz to 1880 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.

BLF6G22LS-130Power LDMOS transistorRev. 01 23 May 2008 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

BLF6G22LS-75Power LDMOS transistorRev. 02 14 April 2010 Product data sheet1. Product profile1.1 General description75 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 ACPR

BLF6G22L-40BNPower LDMOS transistorRev. 1 30 August 2010 Product data sheet1. Product profile1.1 General description40 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D ACPR(MH

BLF7G22L-130; BLF7G22LS-130Power LDMOS transistorRev. 4 20 January 2011 Product data sheet1. Product profile1.1 General description130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f I

BLF6G22LS-100Power LDMOS transistorRev. 3 12 November 2010 Product data sheet1. Product profile1.1 General description100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceRF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f VDS PL(AV) Gp D IMD3 A

BLF7G22L-250P; BLF7G22LS-250PPower LDMOS transistorRev. 3 12 July 2013 Product data sheet1. Product profile1.1 General description250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation f I

BLF7G22L-160; BLF7G22LS-160Power LDMOS transistorRev. 2.1 2 November 2011 Product data sheet1. Product profile1.1 General description160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.Table 1. Typical performanceTypical RF performance at Tcase = 25 C in a common source class-AB production test circuit.Mode of operation

SiHG22N60Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 650 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction lossesQg max. (nC) 86 Ultra low gate charge (Qg)Qgs (nC) 11Available Avalanche energy rated (UIS)Qgd (

SiHG22N65Ewww.vishay.comVishay SiliconixE Series Power MOSFETFEATURESPRODUCT SUMMARY Low figure-of-merit (FOM) Ron x QgVDS (V) at TJ max. 700 Low input capacitance (Ciss)RDS(on) max. at 25 C () VGS = 10 V 0.18 Reduced switching and conduction losses AvailableQg max. (nC) 110 Ultra low gate charge (Qg)Qgs (nC) 15 Avalanche energy rated (UIS) Availab

SiHG22N50Dwww.vishay.comVishay SiliconixD Series Power MOSFETFEATURESPRODUCT SUMMARY Optimal DesignVDS (V) at TJ max. 550- Low Area Specific On-ResistanceRDS(on) max. at 25 C () VGS = 10 V 0.230- Low Input Capacitance (Ciss)Qg max. (nC) 98- Reduced Capacitive Switching LossesQgs (nC) 13- High Body Diode RuggednessQgd (nC) 22- Avalanche Energy Rated (UIS)

SiHG22N60Swww.vishay.comVishay SiliconixS Series Power MOSFETFEATURESPRODUCT SUMMARY Generation oneVDS at TJ max. (V) 650 High EAR capabilityRDS(on) max. at 25 C () VGS = 10 V 0.190 Lower figure-of-merit Ron x QgQg max. (nC) 98 100 % avalanche testedQgs (nC) 17AvailableQgd (nC) 25 Ultra low RonConfiguration Single dV/dt ruggedness U

CEG2288Dual N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 6.2A, RDS(ON) = 24m @VGS = 4.5V. RDS(ON) = 34m @VGS = 2.5V.Super High dense cell design for extremely low RDS(ON).High power and current handing capability.D 1 8 DLead free product is acquired.2 7 S2S1TSSOP-8 Package.S1 3 6 S24G1 5 G2G2S2S2G1DS1S1DTSSOP-8ABSOLUTE MAXI

KSD227(BR3DG227K) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features KSA642BR3CG642K Complement to KSA642(BR3CG642K),PC=400Mw. / Applications Low frequency power amplifier.

3DG2219(2N2219) NPN PCM TA=25 800 mW ICM 800 mA Tjm 150 Tstg -55~150 V(BR)CBO ICB10A 75 V V(BR)CEO ICE10mA 40 V V(BR)EBO IEB10A 6.0 V ICBO VCB=60V 10 nA IEBO VCB=3.0V 10 nA IC=0.5A VCEsat 1.0 V IB=0.05A VCE=10V hFE 100~300 IC=0.15A

3DG2218A NPN PCM TA=25 800 mW ICM 800 mA Tjm 175 Tstg -55~150 V(BR)CEO ICE=10mA 50 V V(BR)CBO ICB=10 A 75 V V(BR)EBO IEB=10 A 6 V ICEO VCE=50V 10 A ICBO VCB=60V 10 A IEBO VEB=6V 10 A VBEsat 2.0 V IC=500mA IB=5

3CG22 PNP A B C D E F G PCM 500 mW ICM 100 mA Tjm 175 Tstg -55~150 V(BR)CBO ICB=0.1mA 20 30 40 50 65 80 95 V V(BR)CEO ICE=0.1mA 15 25 35 50 65 80 95 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1

2SC2274(3DG2274) 2SC2274K(3DG2274K) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency power amplifier applications. Features: High breakdown voltage, high current, low saturation voltage. /Absolute Maximum Ratings(Ta=25) Symbol R

2SC2216M(3DG2216M) NPN /SILICON NPN TRANSISTOR : Purpose: TV final picture IF amplifier applications. :,h FEFeatures: High gain, good h linearity. FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 50 V CBO V 45 V CEO V 4.0 V EB

2SC2274(3DG2274) 2SC2274K(3DG2274K) NPN /SILICON NPN TRANSISTOR : Purpose: Low frequency power amplifier applications. Features: High breakdown voltage, high current, low saturation voltage. /Absolute Maximum Ratings(Ta=25) Symbol R

2SC2240(3DG2240) NPN /SILICON NPN TRANSISTOR : Purpose: Low noise audio amplifier applications. : ,, Features: Low noise, high DC current gain, high breakdown voltage. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V 120

2SC2235(3DG2235) NPN /SILICON NPN TRANSISTOR :, Purpose: Audio frequency amplifier and driver stage amplifier Applications. : 2SA965(3CG965)/Features: Complementary to 2SA965(3CG965). /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 120 V CBO V 120 V

2SC2216(3DG2216) NPN /SILICON NPN TRANSISTOR : Purpose: TV final picture IF amplifier applications. :,h FEFeatures: High gain, good h linearity. FE/Absolute maximum ratings(Ta=25) Symbol Rating Unit V 50 V CBO V 45 V CEO V 4.0 V EBO

2N2222(3DG2222) NPN /SILICON NPN TRANSISTOR : Purpose: General purpose amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 60 V CBO V 30 V CEO V 5.0 V EBO I 600 mA C P 625 mW CT 150 j T -55150 stg /Electrical characteristics(Ta

2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR :,/Purpose: High voltage general amplifier, color TV class B sound output applications. :V ,/Features: High voltage, high DC current gain. CEO /Absolute maximum ratings(Ta=25)

2SC2236(3DG2236) NPN /SILICON NPN TRANSISTOR :/Purpose: Audio frequency power amplifier applications. : 2SA966(3CG966) 3W /Features: Complementary to 2SA966(3CG966) And 3 watts output applications. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 30 V

2N2222A(3DG2222A) NPN /SILICON NPN TRANSISTOR : Purpose: General purpose amplifier. /Absolute maximum ratings(Ta=25) Symbol Rating Unit V 75 V CBO V 40 V CEO V 6.0 V EBO I 600 mA C P 625 mW CT 150 j T -55150 stg /Electrical characteristics(

2SC2230(3DG2230) 2SC2230A(3DG2230A) NPN /SILICON NPN TRANSISTOR :,/Purpose: High voltage general amplifier, color TV class B sound output applications. :V ,/Features: High voltage, high DC current gain. CEO /Absolute maximum ratings(Ta=25)

2SC2229(3DG2229) NPN /SILICON NPN TRANSISTOR :, Purpose: TV video output,high voltage switching and driver stage of audio amplifier applications. :,, Features: High breakdown voltage, low output capacitance, high f . T/

MMG225WB170B6EN1700V 225A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(1700V Trench+Field Stop technology) Low turn-off losses, short tail current VCE(sat) with positive temperature coefficient DIODE CHIP(1700V EMCON 3 technology) Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS

MMG225WB120B6TN1200V 225A IGBT ModuleMay 2015 Version 01 RoHS CompliantPRODUCT FEATURES IGBT3 CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Temperature sense includedAPPLICATIONS AC motor control Motion/servo c

SHD225715 SENSITRON SHDCG225715 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4340, REV. - LOW RDS HERMETIC POWER MOSFET - N-CHANNEL FEATURES: 60 Volt, 0.008 Ohm, 110A MOSFET for Glidcop version Isolated Hermetic Metal Package Ultra Low RDS (on) Available with Ceramic Seals and Glidcop leads, use part number SHDCG225715 MAXIMUM RATINGS ALL RATINGS ARE AT TC =

SENSITRON SHD225509 SHDC225509 SEMICONDUCTOR SHDG225509 TECHNICAL DATA DATA SHEET 4964, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 1000 Volt, 6A, 2 Ohm, MOSFET Isolated Hermetic Metal Package Fast intrinsic Rectifier Low RDS (on) Ceramic Seals with Glidcop leads (SHDG225509) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE S