G22 Specs and Replacement
Type Designator: G22
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 300 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 Ohm
Package: SOT23
G22 substitution
- MOSFET ⓘ Cross-Reference Search
G22 datasheet
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Detailed specifications: G60N04 , G66 , G66-3L , G68 , G69 , G80N06 , G96 , GD1 , IRF3710 , G23 , G11 , G16 , G17 , 03N06 , 05N06 , 100N03 , 100P03 .
Keywords - G22 MOSFET specs
G22 cross reference
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