G11 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: G11
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 580 nS
Cossⓘ - Capacitancia de salida: 334 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de G11 MOSFET
- Selecciónⓘ de transistores por parámetros
G11 datasheet
hyg110p04lq2c2.pdf
HYG110P04LQ2C2 Single P-Channel Enhancement Mode MOSFET Feature Description Pin Description -40V/-55A D D D D D D D D RDS(ON)= 9.0 m (typ.) @VGS = - 10V RDS(ON)= 13.0 m (typ.) @VGS = - 4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available G S S S S S S G Pin1 PDFN5*6-8L Applications Switching Application Powe
2n7334 irfg110.pdf
PD-90396H IRFG110 JANTX2N7334 JANTXV2N7334 POWER MOSFET REF MIL-PRF-19500/597 THRU-HOLE (MO-036AB) 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 1.0A HEXFET MOSFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state res
bfg11wx.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor 1996 Jun 04 Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X FEATURES PINNING - SOT343 High power gain PIN DESCRIPTION High efficiency 1 collector Small size discrete po
bfg11 bfg11x 3.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor 1995 Apr 07 Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG11; BFG11/X FEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistors e
ssm5g11tu.pdf
SSM5G11TU Silicon P Channel MOS Type (U-MOS )/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications 4-V drive Unit mm Combined a P-ch MOSFET and a Schottky barrier diode in one package. Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25 C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source vol
tig110bf.pdf
TIG110BF Ordering number EN9013A SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG110BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter
tig110gmh.pdf
TIG110GMH Ordering number EN9018 SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG110GMH High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitte
tig111bf.pdf
TIG111BF Ordering number EN9017A SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG111BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter
tig111gmh.pdf
TIG111GMH Ordering number EN9014 SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG111GMH High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25 C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitte
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1155 hat1072hds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1182 hat2087rds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1162 hat2027rds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1110 h5n2510dldsds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
rej03g1144 hat1021rds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
hgtg11n120cnd.pdf
HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 43A, 1200V, TC = 25oC The HGTG11N120CND is a Non-Punch Through (NPT) 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC voltage switching IGBT famil
hgtg11n120cn hgtp11n120cn hgt1s11n120cn.pdf
HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The HGTG11N120CN, HGTP11N120CN, and 43A, 1200V, TC = 25oC HGT1S11N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC
emg11 umg11n fmg11a.pdf
EMG11 / UMG11N / FMG11A Transistors Emitter common (dual digital transistors) EMG11 / UMG11N / FMG11A External dimensions (Units mm) Features 1) Two DTA123Js chips in a EMT or UMT or SMT EMG11 package. (4) (3) ( ) 2 ( ) ( ) 5 1 1.2 1.6 Equivalent circuit Each lead has same dimensions EMG11 / UMG11N FMG11A ROHM EMT5 (3) (2) (1) (3) (4) (5) R1 R1 R1 R1 R2 R2 R2 R2 U
hgtg11n120cnd.pdf
HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 43A, 1200V, TC = 25oC The HGTG11N120CND is a Non-Punch Through (NPT) 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC voltage switching IGBT famil
emg11.pdf
EMG11 Dual N-Ch Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-553 Two DTC123JCA chips in a package A EQUIVALENT CIRCUIT B J D G H F E C Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 1.50 1.70 F 0.09 0.16 B 1.50 1.70 G 0.45 0.55 C 0.525 0.60 H 0.17
g110n06k.pdf
GOFORD G110N06K General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features VDSS RDS(ON) ID Schematic diagram @ 10V (Typ) 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Tes
g110n06 to252 to251.pdf
GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features VDSS RDS(ON) ID @ 10V (Typ) TO-252 TO-251 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Test
g110n06 to220.pdf
GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features Schematic diagram VDSS RDS(ON) ID @ 10V (Typ) 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Te
g110n06 to252.pdf
GOFORD G110N06. Description The G110N06. uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) m m 110 55V 5.8 5.4 A High density cell design for ultra low Rdson Fully characteriz
3cg110.pdf
3CG110 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.
3cg1124.pdf
3CG1124 PNP PCM TA=25 500 mW ICM 3 A Tjm 150 Tstg -55 150 V(BR)CBO ICB=10uA 60 V V(BR)CEO ICE=1mA 50 V V(BR)EBO IEB=10uA 6.0 V ICBO VCB=40V 1 A IEBO VEB=4V 1 A VBEsat 1.2 IC=2A V IB=100mA VCEsat 0.7 VCE=2V hFE 100 5
4sdg110.pdf
4SDG110 NPN A B C PCM Ta=25 300 4 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 25 35 50 V V(BR)CEO ICE=0.1mA 20 30 45 V V(BR) EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.01 A ICEO VCE=10V 0.1 A IEBO VEB=2V 0.1 A
3cg112.pdf
3CG112 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0
3dg117b.pdf
3DG117B NPN PCM TA=25 300 mW ICM 30 mA Tjm 175 Tstg -55 175 V(BR)CBO ICB=0.1mA 160 V V(BR)CEO ICE=0.1mA 160 V V(BR)EBO IEB=0.1mA 4.0 V ICEO VCE=10V 0.1 A IC=10mA VCEsat 0.7 V IB=1mA VCE=10V hFE 30 IC=5mA VCE=10V
scg118.pdf
SCG118 PNP A B C PCM 100 2 mW ICM Ta=25 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.01mA 30 45 60 V V(BR)CEO ICE=0.01mA 20 30 45 V V(BR) EBO IEB=0.01mA 6.0 V ICBO VCB=10V 0.01 A ICEO VCE=10V 0.1 A IEBO VEB=3V 0.1 A
3dg112.pdf
3DG112 NPN A B C D PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 40 20 40 V V(BR)CEO ICE=0.1mA 15 30 15 30 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A
3cg114b.pdf
3CG114B PNP PCM TA=25 1.0 W ICM 1.0 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.5 VCE=2V
3dg111.pdf
3DG111 NPN A B C D PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 40 60 80 V V(BR)CEO ICE=0.1mA 15 30 45 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.1 A IEBO VEB=1.5V 0.1 A
3dg114b.pdf
3DG114B NPN PCM TA=25 1000 mW ICM 1000 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 60 V V(BR)CEO ICE=0.1mA 60 V V(BR)EBO IEB=0.1mA 5.0 V ICBO VCB=30V 1.0 A ICEO VCE=30V 1.0 A VBEsat 0.5 IC=500mA V IB=50mA VCEsat 1.5 VC
3cg111.pdf
3CG111 PNP A B C D E F G PCM 300 mW ICM 50 mA Tjm 175 Tstg -55 150 V(BR)CBO ICB=0.1mA 20 35 50 65 80 95 110 V V(BR)CEO ICE=0.1mA 15 30 45 60 75 90 105 V V(BR)EBO IEB=0.1mA 4.0 V ICBO VCB=10V 0.1 A ICEO VCE=10V 0.
chemg11gp.pdf
CHENMKO ENTERPRISE CO.,LTD CHEMG11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current
chumg11gp.pdf
CHENMKO ENTERPRISE CO.,LTD CHUMG11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88A/SOT-353) SC-88A/SOT353 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu
chfmg11gp.pdf
CHENMKO ENTERPRISE CO.,LTD CHFMG11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-74A) SC-74A * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabilit
3dg1162.pdf
2SC1162(3DG1162) NPN /SILICON NPN TRANSISTOR /Purpose Low frequency power amplifier. 2SA715(3CG715) /Features Complementary pair with 2SA715(3CG715). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 35 V CBO V 35 V CEO V 5.0 V EBO I 2.5 A C I 3.0 A
hyg110p04lq2d hyg110p04lq2u hyg110p04lq2v.pdf
HYG110P04LQ2 D/U/V P-Channel Enhancement Mode MOSFET Feature Pin Description -40V/-50A RDS(ON)= 9.4m (typ.) @VGS = -10V RDS(ON)= 13 m (typ.) @VGS = -4.5V S D S G D 100% avalanche tested G S Reliable and Rugged D G Halogen Free and Green Devices Available (RoHS Compliant) TO-252-2L TO-251-3L TO-251-3S Applications Switching application Power Management in
3cg1198k.pdf
2SB1198K(3CG1198K) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1782K(3DG1782K) Features High breakdown,low V ,complements the 2SD1782K(3DG1782K). CE(sat) /Absolute maximum ratings(Ta=25 ) Sym
3cg1128.pdf
2SA1128(3CG1128) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency output amplifier. , 2SC1788(3DG1788) Features low V ,complementary pair with 2SC1788(3DG1788). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -25 V CBO V -20 V CEO
3cg1132.pdf
2SB1132(3CG1132) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1664(3DG1664) Features Low saturation voltage, complements the 2SD1664(3DG1664). /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V CBO -40 V
3cg1160.pdf
2SA1160(3CG1160) PNP /SILICON PNP TRANSISTOR , Purpose Strobe flash,medium power amplifier applications. , Features High DC current gain and excellent hFE linearity,low saturation voltage. /Absolute maximum ratings(Ta=25 )
3cg1189.pdf
2SB1189(3CG1189) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1767(3DG1767) Features Low V complements the 2SD1767(3DG1767). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -80 V CBO V -80 V C
3cg1188.pdf
2SB1188(3CG1188) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1766(3DG1766) Features Low V complements the 2SD1766(3DG1766). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32 V C
3cg1175.pdf
2SA1175(3CG1175) PNP /SILICON PNP TRANSISTOR /Purpose Driver stage of audio frequency amplifier. , , 2SC2785(3DG2785) Features High voltage and excellent h linearity, complementary pair with 2SC2785(3DG2785). FE /Absolute maximum ratings(Ta=25 )
3cg1182.pdf
2SB1182(3CG1182) PNP /SILICON PNP TRANSISTOR Purpose Medium power amplifier applications. , 2SD1758(3DG1758) Features Low V complements the 2SD1758(3DG1758). CE(sat), /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32 V
3cg1162.pdf
2SA1162(3CG1162) PNP /SILICON PNP TRANSISTOR /Purpose Audio frequency general purpose amplifier applications. , , , , 2SC2712(3DG2712) Features High voltage and current,excellent h linearity,high h ,low noise,complementary FE FE to 2SC2712(3
3cg1197k.pdf
2SB1197K(3CG1197K) PNP /SILICON PNP TRANSISTOR Purpose Low frequency amplifier applications. , 2SD1781K(3DG1781K) Features Low V ,complements the 2SD1781K(3DG1781K). CE(sat) /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V -40 V CBO V -32
apg110n10nf.pdf
APG110N10NF 100V N-Channel Enhancement Mode MOSFET Description The APG110N10NF uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =110A DS D R
Otros transistores... G66-3L , G68 , G69 , G80N06 , G96 , GD1 , G22 , G23 , AON6414A , G16 , G17 , 03N06 , 05N06 , 100N03 , 100P03 , 10N03 , 110N10 .
History: IRL3715Z
History: IRL3715Z
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