G11 Todos los transistores

 

G11 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: G11

Código: G11

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 3 W

Tensión drenaje-fuente (Vds): 12 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 580 nS

Conductancia de drenaje-sustrato (Cd): 334 pF

Resistencia drenaje-fuente RDS(on): 0.018 Ohm

Empaquetado / Estuche: SOP8

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G11 Datasheet (PDF)

1.1. scg118.pdf Size:229K _update

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SCG118 型 PNP 硅高频小功率晶体管对管 规范值 参数符号 测试条件 单位 A B C PCM 100ⅹ2 mW 极 ICM Ta=25℃ 50 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.01mA ≥30 ≥45 ≥60 V V(BR)CEO ICE=0.01mA ≥20 ≥30 ≥45 V V(BR) EBO IEB=0.01mA ≥6.0 V ICBO VCB=10V ≤0.01 µA 直 ICEO VCE=10V ≤0.1 µA 流 IEBO VEB=3V ≤0.1 µA

1.2. 4sdg110.pdf Size:138K _upd

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4SDG110 型 NPN 硅高频小功率晶体管阵列 规范值 参数符号 测试条件 单位 A B C PCM Ta=25℃ 300ⅹ4 mW 极 ICM 50 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥25 ≥35 ≥50 V V(BR)CEO ICE=0.1mA ≥20 ≥30 ≥45 V V(BR) EBO IEB=0.1mA ≥4.0 V ICBO VCB=10V ≤0.01 µA 直 ICEO VCE=10V ≤0.1 µA 流 参 IEBO VEB=2V ≤0.1 µA

 1.3. 4scg110.pdf Size:240K _upd

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4SCG110 型 PNP 硅高频小功率晶体管阵列 规范值 参数符号 测试条件 单位 A B C PCM Ta=25℃ 300ⅹ4 mW 极 ICM 50 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥25 ≥35 ≥50 V V(BR)CEO ICE=0.1mA ≥20 ≥30 ≥45 V V(BR) EBO IEB=0.1mA ≥5.0 V ICBO VCB=10V ≤0.01 µA 直 ICEO VCE=10V ≤0.1 µA 流 IEBO VEB=2V ≤0.1 µA

1.4. 4sdg110k.pdf Size:229K _upd

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4SDG110K 型 NPN 硅高频小功率晶体管阵列 规范值 参数符号 测试条件 单位 A B C PCM Ta=25℃ 300ⅹ4 mW 极 ICM 50 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥25 ≥35 ≥50 V V(BR)CEO ICE=0.1mA ≥20 ≥30 ≥45 V V(BR) EBO IEB=0.1mA ≥5.0 V ICBO VCB=10V ≤0.1 µA 直 ICEO VCE=10V ≤0.2 µA 流 IEBO VEB=2V ≤0.2 µA

 1.5. ssm5g11tu.pdf Size:200K _upd-mosfet

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SSM5G11TU Silicon P Channel MOS Type (U-MOSⅢ)/Silicon Epitaxial Schottky Barrier Diode SSM5G11TU DC-DC Converter Applications • 4-V drive Unit: mm • Combined a P-ch MOSFET and a Schottky barrier diode in one package. • Low RDS (ON) and Low VF Absolute Maximum Ratings MOSFET (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source vol

1.6. irfg110.pdf Size:267K _upd-mosfet

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PD-90396H IRFG110 JANTX2N7334 JANTXV2N7334 POWER MOSFET REF:MIL-PRF-19500/597 THRU-HOLE (MO-036AB) 100V, QUAD N-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 Ω 1.0A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state res

1.7. bfg11wx.pdf Size:79K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BFG11W/X NPN 2 GHz power transistor 1996 Jun 04 Product specification Supersedes data of September 1995 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz power transistor BFG11W/X FEATURES PINNING - SOT343 High power gain PIN DESCRIPTION High efficiency 1 collector Small size discrete power ampli

1.8. bfg11 bfg11x 3.pdf Size:62K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor 1995 Apr 07 Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors Philips Semiconductors Product specification NPN 2 GHz RF power transistor BFG11; BFG11/X FEATURES DESCRIPTION High power gain NPN silicon planar epitaxial transistors encaps

1.9. tig110gmh.pdf Size:479K _sanyo

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TIG110GMH Ordering number : EN9018 SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG110GMH High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage

1.10. tig111bf.pdf Size:461K _sanyo

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TIG111BF Ordering number : EN9017A SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG111BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage V

1.11. tig110bf.pdf Size:463K _sanyo

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TIG110BF Ordering number : EN9013A SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG110BF High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage V

1.12. tig111gmh.pdf Size:474K _sanyo

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TIG111GMH Ordering number : EN9014 SANYO Semiconductors DATA SHEET N-Channel Non Punch Through IGBT TIG111GMH High Power High Speed Switching Applications Features Low-saturation voltage Ultrahigh speed switching Enhansment type Specifications Absolute Maximum Ratings at Ta=25C, Unless otherwise specified Parameter Symbol Conditions Ratings Unit Collector-to-Emitter Voltage

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.66. rej03g1179 hat2077rds.pdf Size:104K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.67. rej03g1119 h7n0203abds.pdf Size:101K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.68. rej03g1174 hat2058rds.pdf Size:243K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.69. rej03g1177 hat2070rds.pdf Size:103K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.70. rej03g1175 hat2064rds.pdf Size:103K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.71. rej03g1171 hat2050tds.pdf Size:110K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.72. rej03g1191 hat2137hds.pdf Size:104K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.73. rej03g1157 hat2020rds.pdf Size:102K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.74. rej03g1182 hat2087rds.pdf Size:127K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.75. rej03g1178 hat2071rds.pdf Size:103K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.76. rej03g1155 hat1072hds.pdf Size:199K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.77. rej03g1192 hat2140hds.pdf Size:68K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.78. rej03g1147 hat1025rds.pdf Size:110K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.79. rej03g1117 h5n5015pds.pdf Size:99K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.80. rej03g1190 hat2134hds.pdf Size:68K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.81. rej03g1103 h5n2004dldsds.pdf Size:104K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.82. rej03g1116 h5n5007pds.pdf Size:99K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.83. rej03g1122 h7n0308abds.pdf Size:94K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.84. rej03g1124 h7n0308ldlslmds.pdf Size:107K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.85. rej03g1154 hat1054rds.pdf Size:109K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.86. rej03g1163 hat2028rrjds.pdf Size:114K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.87. rej03g1158 hat2022rds.pdf Size:102K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.88. rej03g1184 hat2089rds.pdf Size:71K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.89. rej03g1143 hat1020rds.pdf Size:103K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.90. rej03g1118 h5n6001pds.pdf Size:98K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.91. rej03g1195 hat2143hds.pdf Size:68K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.92. rej03g1148 hat1026rds.pdf Size:102K _renesas

G11
G11

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding. Re

1.93. hgtg11n120cn hgtp11n120cn hgt1s11n120cn.pdf Size:138K _fairchild_semi

G11
G11

HGTG11N120CN, HGTP11N120CN, HGT1S11N120CNS Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features The HGTG11N120CN, HGTP11N120CN, and 43A, 1200V, TC = 25oC HGT1S11N120CNS are Non-Punch Through (NPT) IGBT 1200V Switching SOA Capability designs. They are new members of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC voltage

1.94. hgtg11n120cnd.pdf Size:105K _fairchild_semi

G11
G11

HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT Features with Anti-Parallel Hyperfast Diode 43A, 1200V, TC = 25oC The HGTG11N120CND is a Non-Punch Through (NPT) 1200V Switching SOA Capability IGBT design. This is a new member of the MOS gated high Typical Fall Time. . . . . . . . . . . . . . . . 340ns at TJ = 150oC voltage switching IGBT family. IGBTs

1.95. irfg110.pdf Size:221K _international_rectifier

G11
G11

PD - 90396G IRFG110 JANTX2N7334 JANTXV2N7334 POWER MOSFET REF:MIL-PRF-19500/597 THRU-HOLE (MO-036AB) 100V, QUAD N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFG110 0.7 ? 1.0A HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state re- sistan

1.96. emg11 umg11n fmg11a.pdf Size:55K _rohm

G11

EMG11 / UMG11N / FMG11A Transistors Emitter common (dual digital transistors) EMG11 / UMG11N / FMG11A External dimensions (Units : mm) Features 1) Two DTA123Js chips in a EMT or UMT or SMT EMG11 package. (4) (3) ( ) 2 ( ) ( ) 5 1 1.2 1.6 Equivalent circuit Each lead has same dimensions EMG11 / UMG11N FMG11A ROHM : EMT5 (3) (2) (1) (3) (4) (5) R1 R1 R1 R1 R2 R2 R2 R2 UMG1

1.97. umg11n fmg11a g11 sot353 sot23-5.pdf Size:35K _rohm

G11

(96-384-A123J

1.98. emg11.pdf Size:92K _secos

G11

EMG11 Dual N-Ch Digital Transistors (Built-in Resistors) Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-553 ? Two DTC123JCA chips in a package A EQUIVALENT CIRCUIT B J D G H F E C Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 1.50 1.70 F 0.09 0.16 B 1.50 1.70 G 0.45 0.55 C 0.525 0.60 H 0.17 0.27

1.99. g110n06 to220.pdf Size:1574K _goford

G11
G11

GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features Schematic diagram ● VDSS RDS(ON) ID @ 10V (Typ) 55V 5.2 m Ω 110A ● Ultra Low On-Resistance ● High UIS and UIS 100% Te

1.100. g11.pdf Size:1953K _goford

G11
G11

GOFORD G11 General Description The G11 uses advanced trench technology to provide SOP-8 excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch. With ESD. Product Summary Pin1 VDSS RDS(ON) RDS(ON) ID (Typ) @-2.5V @-4.5V (Typ) -12V 12 mΩ 21mΩ -12 A Schematic diagram Absolute Maximum Ratings TA=25

1.101. g110n06 to252 to251.pdf Size:1551K _goford

G11
G11

GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features ● VDSS RDS(ON) ID @ 10V (Typ) TO-252 TO-251 55V 5.2 m Ω 110A ● Ultra Low On-Resistance ● High UIS and UIS 100% Test

1.102. g110n06 to252.pdf Size:1351K _goford

G11
G11

GOFORD G110N06. Description The G110N06. uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features ● Schematic diagram VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) mΩ mΩ 110 55V 5.8 5.4 A ● High density cell design for ultra low Rdson ● Fully characteriz

1.103. 3cg1128.pdf Size:218K _china

G11
G11

2SA1128(3CG1128) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:音频输出放大。/Purpose: Audio frequency output amplifier. 特点:饱和压降小,与 2SC1788(3DG1788)互补。 Features: low V ,complementary pair with 2SC1788(3DG1788). CE(sat) 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -25 V CBO V -20 V CEO

1.104. 3dg114b.pdf Size:103K _china

G11

3DG114B 型 NPN 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 PCM TA=25℃ 1000 mW 极 ICM 1000 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥60 V V(BR)CEO ICE=0.1mA ≥60 V V(BR)EBO IEB=0.1mA ≥5.0 V 直 ICBO VCB=30V ≤1.0 μA 流 ICEO VCE=30V ≤1.0 μA 参 VBEsat ≤0.5 IC=500mA 数 V IB=50mA VCEsat ≤1.5 VC

1.105. 3cg1189.pdf Size:262K _china

G11
G11

2SB1189(3CG1189) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率放大。 Purpose: Medium power amplifier applications. 特点:饱和压降低,与 2SD1767(3DG1767) 互补。 Features: Low V complements the 2SD1767(3DG1767). CE(sat), 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -80 V CBO V -80 V C

1.106. 3dg111.pdf Size:128K _china

G11

3DG111 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C D PCM 300 mW 极 ICM 50 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥20 ≥40 ≥60 ≥80 V V(BR)CEO ICE=0.1mA ≥15 ≥30 ≥45 ≥60 V V(BR)EBO IEB=0.1mA ≥5.0 V ICBO VCB=10V ≤0.1 μA 直 ICEO VCE=10V ≤0.1 μA 流 参 IEBO VEB=1.5V ≤0.1 μA 数

1.107. 3cg111.pdf Size:132K _china

G11

3CG111 型 PNP 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F G PCM 300 mW 极 ICM 50 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥20 ≥35 ≥50 ≥65 ≥80 ≥95 ≥110 V V(BR)CEO ICE=0.1mA ≥15 ≥30 ≥45 ≥60 ≥75 ≥90 ≥105 V V(BR)EBO IEB=0.1mA ≥4.0 V 直 ICBO VCB=10V ≤0.1 μA 流 ICEO VCE=10V ≤0.

1.108. 3cg1124.pdf Size:112K _china

G11

3CG1124 型 PNP 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 PCM TA=25℃ 500 mW 极 ICM 3 A 限 Tjm 150 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=10uA ≥60 V V(BR)CEO ICE=1mA ≥50 V V(BR)EBO IEB=10uA ≥6.0 V 直 ICBO VCB=40V ≤1 μA 流 IEBO VEB=4V ≤1 μA 参 数 VBEsat ≤1.2 IC=2A V IB=100mA VCEsat ≤0.7 VCE=2V hFE 100~5

1.109. 3cg1160.pdf Size:239K _china

G11
G11

2SA1160(3CG1160) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于闪光灯闪光驱动,中功率放大。 Purpose: Strobe flash,medium power amplifier applications. 特点:直流电流增益高,放大线性好,饱和压降低。 Features: High DC current gain and excellent hFE linearity,low saturation voltage. 极限参数/Absolute maximum ratings(Ta=25℃) 参数

1.110. chemg11gp.pdf Size:131K _china

G11
G11

CHENMKO ENTERPRISE CO.,LTD CHEMG11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-553) SOT553 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. (4) (3) * High saturation current

1.111. 3cg1197k.pdf Size:230K _china

G11
G11

2SB1197K(3CG1197K) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于一般低频放大。 Purpose: Low frequency amplifier applications. 特点:饱和压降低,可与 2SD1781K(3DG1781K)。 Features: Low V ,complements the 2SD1781K(3DG1781K). CE(sat) 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -40 V CBO V -32

1.112. 3dg117b.pdf Size:118K _china

G11

3DG117B 型 NPN 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 PCM TA=25℃ 300 mW 极 ICM 30 mA 限 Tjm 175 ℃ 值 Tstg -55~175 ℃ V(BR)CBO ICB=0.1mA ≥160 V V(BR)CEO ICE=0.1mA ≥160 V V(BR)EBO IEB=0.1mA ≥4.0 V 直 流 ICEO VCE=10V ≤0.1 μA 参 IC=10mA VCEsat ≤0.7 V 数 IB=1mA VCE=10V hFE ≥30 IC=5mA 交 VCE=10V 流

1.113. 3cg1198k.pdf Size:267K _china

G11
G11

2SB1198K(3CG1198K) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于一般中功率放大。 Purpose: Medium power amplifier applications. 特点:击穿电压高,饱和压降低,与 2SD1782K(3DG1782K)互补。 Features: High breakdown,low V ,complements the 2SD1782K(3DG1782K). CE(sat) 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Sym

1.114. 3cg1162.pdf Size:268K _china

G11
G11

2SA1162(3CG1162) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于普通音频放大/Purpose:Audio frequency general purpose amplifier applications. 特点:电压和集电极直流电流大,极好的放大线性,高放大,噪声系数低,与 2SC2712(3DG2712)互补。 Features:High voltage and current,excellent h linearity,high h ,low noise,complementary FE FE to 2SC2712(3

1.115. 3dg110.pdf Size:127K _china

G11

3DG110 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C D PCM 300 mW 极 ICM 50 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥40 ≥60 ≥40 ≥60 V V(BR)CEO ICE=0.1mA ≥30 ≥45 ≥30 ≥45 V V(BR)EBO IEB=0.1mA ≥5.0 V ICBO VCB=10V ≤0.03 μA 直 ICEO VCE=10V ≤0.5 μA 流 参 IEBO VEB=1.5V ≤0.05 μA

1.116. 3cg112.pdf Size:132K _china

G11

3CG112 型 PNP 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F G PCM 300 mW 极 ICM 50 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥20 ≥35 ≥50 ≥65 ≥80 ≥95 ≥110 V V(BR)CEO ICE=0.1mA ≥15 ≥30 ≥45 ≥60 ≥75 ≥90 ≥105 V V(BR)EBO IEB=0.1mA ≥4.0 V ICBO VCB=10V ≤0.1 μA 直 流 ICEO VCE=10V ≤0

1.117. 3dg1162.pdf Size:236K _china

G11
G11

2SC1162(3DG1162) 硅 NPN 半导体三极管/SILICON NPN TRANSISTOR 用途:用于低频功率放大/Purpose: Low frequency power amplifier. 特点:与 2SA715(3CG715)互补/Features: Complementary pair with 2SA715(3CG715). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 35 V CBO V 35 V CEO V 5.0 V EBO I 2.5 A C I 3.0 A

1.118. 3cg1182.pdf Size:219K _china

G11
G11

2SB1182(3CG1182) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率放大。 Purpose: Medium power amplifier applications. 特点:饱和压降低,与 2SD1758(3DG1758) 互补。 Features: Low V complements the 2SD1758(3DG1758). CE(sat), 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -40 V CBO V -32 V

1.119. chumg11gp.pdf Size:184K _china

G11
G11

CHENMKO ENTERPRISE CO.,LTD CHUMG11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88A/SOT-353) SC-88A/SOT353 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu

1.120. 3cg114b.pdf Size:103K _china

G11

3CG114B 型 PNP 硅高频小功率晶体管 参数符号 测试条件 规范值 单位 PCM TA=25℃ 1.0 W 极 ICM 1.0 A 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥60 V V(BR)CEO ICE=0.1mA ≥60 V V(BR)EBO IEB=0.1mA ≥5.0 V 直 ICBO VCB=30V ≤1.0 μA 流 ICEO VCE=30V ≤1.0 μA 参 数 VBEsat ≤0.5 IC=500mA V IB=50mA VCEsat ≤1.5 VCE=2V

1.121. 3dg112.pdf Size:127K _china

G11

3DG112 型 NPN 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C D PCM 300 mW 极 ICM 50 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥20 ≥40 ≥20 ≥40 V V(BR)CEO ICE=0.1mA ≥15 ≥30 ≥15 ≥30 V V(BR)EBO IEB=0.1mA ≥4.0 V ICBO VCB=10V ≤0.1 μA 直 ICEO VCE=10V ≤0.1 μA 流 参 IEBO VEB=1.5V ≤0.1 μA 数

1.122. 3cg110.pdf Size:133K _china

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3CG110 型 PNP 硅高频小功率晶体管 规范值 参数符号 测试条件 单位 A B C D E F G PCM 300 mW 极 ICM 50 mA 限 Tjm 175 ℃ 值 Tstg -55~150 ℃ V(BR)CBO ICB=0.1mA ≥20 ≥35 ≥50 ≥65 ≥80 ≥95 ≥110 V V(BR)CEO ICE=0.1mA ≥15 ≥30 ≥45 ≥60 ≥75 ≥90 ≥105 V V(BR)EBO IEB=0.1mA ≥4.0 V 直 ICBO VCB=10V ≤0.1 μA 流 ICEO VCE=10V ≤0.

1.123. 3cg1132.pdf Size:381K _china

G11
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2SB1132(3CG1132) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率放大。 Purpose: Medium power amplifier applications. 特点:饱和压降低,与 2SD1664(3DG1664)互补。 Features: Low saturation voltage, complements the 2SD1664(3DG1664). 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V CBO -40 V

1.124. 3cg1188.pdf Size:292K _china

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2SB1188(3CG1188) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于中功率放大。 Purpose: Medium power amplifier applications. 特点:饱和压降低,与 2SD1766(3DG1766) 互补。 Features: Low V complements the 2SD1766(3DG1766). CE(sat), 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V -40 V CBO V -32 V C

1.125. chfmg11gp.pdf Size:138K _china

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CHENMKO ENTERPRISE CO.,LTD CHFMG11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-74A) SC-74A * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabilit

1.126. 3cg1175.pdf Size:415K _china

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2SA1175(3CG1175) 硅 PNP 半导体三极管/SILICON PNP TRANSISTOR 用途:用于音频放大器驱动级/Purpose: Driver stage of audio frequency amplifier. 特点:耐压高,极好的线性,可与 2SC2785(3DG2785)互补。 Features: High voltage and excellent h linearity, complementary pair with 2SC2785(3DG2785). FE 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值

Otros transistores... IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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Recientemente añadidas las descripciónes de los transistores:

MOSFET: RJK0329DPB-00 | RJK0323JPD | RJK005N03T146 | RJK005N03FRA | RJJ0601JPN | RJJ0601JPE | RHU003N03FRA | RHU003N03 | RHU002N06FRA | RHU002N06 | RHP030N03T100 | RHP020N06T100 | RHK005N03T146 | RHK005N03FRA | RHK003N06T146 |

 

 

 
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