03N06 Todos los transistores

 ..1. Size:1558K  goford
 03n06.pdf

GOFORD 03N06 D Description The 03N06 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S Schematic Diagram General Features VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) 03N06 m m 3 60V 8

 0.1. Size:913K  rohm
 rhk003n06fra.pdf

RHK003N06FRA RHK003N06 Transistors AEC-Q101 Qualified 4V Drive Nch MOS FET RHK003N06FRA RHK003N06 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol

 0.2. Size:52K  rohm
 rhk003n06t146.pdf

RHK003N06 Transistors 4V Drive Nch MOS FET RHK003N06 Structure External dimensions (Unit mm) Silicon N-channel MOS FET SMT3 2.9 1.1 0.4 0.8 Features (3) 1) Low On-resistance. 2) 4V drive. (2) (1) 0.95 0.95 0.15 1.9 (1)Source Applications Each lead has same dimensions (2)Gate Switching (3)Drain Abbreviated symbol RKS Packaging specifications and hFE Inn

 0.3. Size:944K  mcc
 mcq03n06.pdf

MCQ03N06 Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Dual Compliant. See Ordering Information) Advanced Trench MOSFET Process Technology N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Power MOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF" Maximum Ratings Operating Junction Temperatu

 0.4. Size:278K  inpower semi
 ftp03n06na.pdf

FTP03N06NA N-Channel MOSFET Lead Free Package and Finish Applications Adaptor VDSS RDS(ON)(Typ.) ID Charger SMPS 60V 3m 230A Features RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PACKAGE BRAND FTP03N06NA TO-220 IPS Absolute Ma

 0.5. Size:466K  way-on
 wm03n06m.pdf

WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS D R

 0.6. Size:889K  cn vbsemi
 rhk003n06t146.pdf

RHK003N06T146 www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection

 0.7. Size:583K  cn yangzhou yangjie elec
 yjl03n06a.pdf