GOFORD03N06DDescription The 03N06 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic Diagram General Features VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)03N06 m m 360V 8

RHK003N06FRARHK003N06TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHK003N06FRARHK003N06 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol :

RHK003N06 Transistors 4V Drive Nch MOS FET RHK003N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : RKS Packaging specifications and hFE Inn

MCQ03N06Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Dual Compliant. See Ordering Information) Advanced Trench MOSFET Process TechnologyN-Channel Epoxy Meets UL 94 V-0 Flammability RatingPower MOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"Maximum Ratings Operating Junction Temperatu

FTP03N06NA N-Channel MOSFET Lead Free Package and Finish Applications: Adaptor VDSS RDS(ON)(Typ.) ID Charger SMPS 60V 3m 230A Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PACKAGE BRAND FTP03N06NA TO-220 IPS Absolute Ma

WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS DR

RHK003N06T146www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD Protection

RoHS COMPLIANT YJL03N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 3.0A D R ( at V =10V) 100 mohm DS(ON) GS R ( at V =4.5V) 120 mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON)Applications