All MOSFET. 03N06 Datasheet


03N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: 03N06

SMD Transistor Code: 03N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.7 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 15 nS

Drain-Source Capacitance (Cd): 34 pF

Maximum Drain-Source On-State Resistance (Rds): 0.105 Ohm

Package: SOT23-3L

03N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

03N06 Datasheet (PDF)

1.1. 03n06.pdf Size:1558K _goford


GOFORD 03N06 D Description The 03N06 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. S Schematic Diagram General Features ● VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) 03N06 mΩ mΩ 3 60V 8

Datasheet: G80N06 , G96 , GD1 , G22 , G23 , G11 , G16 , G17 , IRF510 , 05N06 , 100N03 , 100P03 , 10N03 , 110N10 , 11N10C , 120N03 , 1402TR .

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