03N06
MOSFET. Datasheet pdf. Equivalent
Type Designator: 03N06
Marking Code: 03N06
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.4
V
|Id|ⓘ - Maximum Drain Current: 3
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 6
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 34
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105
Ohm
Package:
SOT23-3L
03N06
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
03N06
Datasheet (PDF)
..1. Size:1558K goford
03n06.pdf 
GOFORD03N06DDescription The 03N06 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other switching application. SSchematic Diagram General Features VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)03N06 m m 360V 8
0.1. Size:913K rohm
rhk003n06fra.pdf
RHK003N06FRARHK003N06TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RHK003N06FRARHK003N06 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol :
0.2. Size:52K rohm
rhk003n06t146.pdf
RHK003N06 Transistors 4V Drive Nch MOS FET RHK003N06 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET SMT32.9 1.10.4 0.8 Features (3)1) Low On-resistance. 2) 4V drive. (2) (1)0.95 0.950.151.9(1)Source ApplicationsEach lead has same dimensions(2)GateSwitching (3)Drain Abbreviated symbol : RKS Packaging specifications and hFE Inn
0.3. Size:944K mcc
mcq03n06.pdf
MCQ03N06Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Dual Compliant. See Ordering Information) Advanced Trench MOSFET Process TechnologyN-Channel Epoxy Meets UL 94 V-0 Flammability RatingPower MOSFET Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"Maximum Ratings Operating Junction Temperatu
0.4. Size:278K inpower semi
ftp03n06na.pdf
FTP03N06NA N-Channel MOSFET Lead Free Package and Finish Applications: Adaptor VDSS RDS(ON)(Typ.) ID Charger SMPS 60V 3m 230A Features: RoHS Compliant Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve Inductive Switching Curves Ordering Information PART NUMBER PACKAGE BRAND FTP03N06NA TO-220 IPS Absolute Ma
0.5. Size:466K way-on
wm03n06m.pdf
WM03N06M N-Channel Enhancement MOSFET Features Way-on Small Signal MOSFETs V = 30V, I = 0.6A DS DR
0.6. Size:889K cn vbsemi
rhk003n06t146.pdf
RHK003N06T146www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (mA)Definition2.8 at VGS = 10 V60 250 Low Threshold: 2 V (typ.) Low Input Capacitance: 25 pF Fast Switching Speed: 25 ns Low Input and Output LeakageSOT-23 TrenchFET Power MOSFET 1200V ESD Protection
0.7. Size:583K cn yangzhou yangjie elec
yjl03n06a.pdf
RoHS COMPLIANT YJL03N06A N-Channel Enhancement Mode Field Effect Transistor Product Summary V 60V DS I 3.0A D R ( at V =10V) 100 mohm DS(ON) GS R ( at V =4.5V) 120 mohm DS(ON) GSGeneral Description Trench Power MV MOSFET technology Excellent package for heat dissipation High density cell design for low R DS(ON)Applications
Datasheet: WPB4002
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