G100N04 Todos los transistores

 ..1. Size:1134K  goford
 g100n04.pdf

GOFORD G100N04 Description The G100N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) m m 100 40V 7 5.2 A High density cell design for ultra low Rdson Fully characterized ava

 0.1. Size:626K  jiejie micro
 jmtg100n04a.pdf

JMTG100N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 40A Load Switch RDS(ON)

 8.1. Size:1492K  goford
 g100n03.pdf

GOFORD G100N03 Description The G100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @ 10V (Typ) 30V 4m 100A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

 8.2. Size:955K  oriental semi
 sfg100n08kf.pdf

 8.3. Size:844K  oriental semi
 sfg100n08gf.pdf

 8.4. Size:881K  oriental semi
 sfg100n08pf.pdf

 8.5. Size:628K  jiejie micro
 jmtg100n03a.pdf

JMTG100N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 30A Load Switch RDS(ON)

 8.6. Size:1285K  jiejie micro
 jmtg100n06a.pdf

60V, 55A, 8.9m N-channel Power Trench MOSFET JMTG100N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 55 A Pb-free plating RDS(ON)_Typ(@VGS=10V 7.7 mW RDS(ON)_Typ(@VGS=4.5V 8.9 mW Applications Load Switch

 8.7. Size:1303K  jiejie micro
 jmtg100n06d.pdf

60V, 33A, 11.7m Dual N-channel Power Trench MOSFET JMTG100N06D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 33 A RDS(ON)_Typ(@VGS=10V 10.4 mW RDS(ON)_Typ(@VGS=4.5V 11.7 mW Applications Load Switch PWM Applicatio

 8.8. Size:222K  cn minos
 mpg100n06 mdt100n06 mps100n06.pdf

Green Product MPG100N06 60VN-Channel Power MOSFET DESCRIPTION KEYCHARACTERISTICS V =60V,I =100A DS D The MPG100N06 uses advanced trench technology to provide R

 8.9. Size:593K  cn minos
 mpg100n07s mpg100n07p.pdf

DESCRIPTION The MPG100N07P uses advanced trench technology to provide excellent R , low gate DS(ON) charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Schematic diagram V = 70V,I = 100A DS D R

 8.10. Size:967K  cn minos
 mpg100n06p mpg100n06s.pdf

Silicon N-Channel Power MOSFET Description The MPG100N06 uses advanced trench technology to provide excellent R , low gate charge. It can be DS(ON) used in a wide variety of applications. KEY CHARACTERISTICS V =60V,I =100A R

 8.11. Size:809K  cn minos
 mpg100n08p.pdf

80V N-Channel Power MOSFET DESCRIPTION The MPG100N08 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. Feature Description V = 80V,I = 100A. DS D R = 5.8m (typ.) @ V = 10V. DS(ON) GS R = 8.6m (Max.) @ V = 10V. DS(ON) GS Schematic diagram Uses CRM(CQ) advanced Trench technology. Extreme

 8.12. Size:248K  cn minos
 mpg100n03p.pdf

Silicon N-Channel Power MOSFET Description The MPG100N03 uses advanced technology and design to provide excellent R . It can be used in a wide variety of DS(ON) applications. General Features V =30V, I =100A DS D Low ON Resistance Low Reverse transfer capacitances Schematic diagram 100% Single Pulse avalanche energy Test Application Power switching application A