G100N04 - описание и поиск аналогов

GOFORD G100N04 Description The G100N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) m m 100 40V 7 5.2 A High density cell design for ultra low Rdson Fully characterized ava

JMTG100N04A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 40V, 40A Load Switch RDS(ON)

GOFORD G100N03 Description The G100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) ID Schematic diagram @ 10V (Typ) 30V 4m 100A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

JMTG100N03A Description JMT N-channel Enhancement Mode Power MOSFET Features Applications 30V, 30A Load Switch RDS(ON)

60V, 55A, 8.9m N-channel Power Trench MOSFET JMTG100N06A Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS TESTED VDSS 60 V 100% Vds TESTED VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 55 A Pb-free plating RDS(ON)_Typ(@VGS=10V 7.7 mW RDS(ON)_Typ(@VGS=4.5V 8.9 mW Applications Load Switch

60V, 33A, 11.7m Dual N-channel Power Trench MOSFET JMTG100N06D Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS 60 V 100% Vds Tested VGS(th)_Typ 1.5 V Halogen-free; RoHS-compliant ID(@VGS=10V) 33 A RDS(ON)_Typ(@VGS=10V 10.4 mW RDS(ON)_Typ(@VGS=4.5V 11.7 mW Applications Load Switch PWM Applicatio

Green Product MPG100N06 60VN-Channel Power MOSFET DESCRIPTION KEYCHARACTERISTICS V =60V,I =100A DS D The MPG100N06 uses advanced trench technology to provide R

DESCRIPTION The MPG100N07P uses advanced trench technology to provide excellent R , low gate DS(ON) charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Schematic diagram V = 70V,I = 100A DS D R

Silicon N-Channel Power MOSFET Description The MPG100N06 uses advanced trench technology to provide excellent R , low gate charge. It can be DS(ON) used in a wide variety of applications. KEY CHARACTERISTICS V =60V,I =100A R

80V N-Channel Power MOSFET DESCRIPTION The MPG100N08 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) in a wide variety of applications. Feature Description V = 80V,I = 100A. DS D R = 5.8m (typ.) @ V = 10V. DS(ON) GS R = 8.6m (Max.) @ V = 10V. DS(ON) GS Schematic diagram Uses CRM(CQ) advanced Trench technology. Extreme

Silicon N-Channel Power MOSFET Description The MPG100N03 uses advanced technology and design to provide excellent R . It can be used in a wide variety of DS(ON) applications. General Features V =30V, I =100A DS D Low ON Resistance Low Reverse transfer capacitances Schematic diagram 100% Single Pulse avalanche energy Test Application Power switching application A