G100N04 Datasheet and Replacement

GOFORDG100N04Description The G100N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 10040V 7 5.2 A High density cell design for ultra low Rdson Fully characterized ava

JMTG100N04ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeaturesApplications 40V, 40A Load SwitchRDS(ON)

GOFORD G100N03 Description The G100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @10V (Typ)30V 4m 100A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

JMTG100N03ADescriptionJMT N-channel Enhancement Mode Power MOSFETFeatures Applications 30V, 30A Load SwitchRDS(ON)

60V, 55A, 8.9m N-channel Power Trench MOSFETJMTG100N06AProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TESTEDVDSS 60 V 100% Vds TESTEDVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 55 A Pb-free platingRDS(ON)_Typ(@VGS=10V 7.7 mWRDS(ON)_Typ(@VGS=4.5V 8.9 mWApplications Load Switch

60V, 33A, 11.7m Dual N-channel Power Trench MOSFETJMTG100N06DProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS 60 V 100% Vds TestedVGS(th)_Typ 1.5 V Halogen-free; RoHS-compliantID(@VGS=10V) 33 ARDS(ON)_Typ(@VGS=10V 10.4 mWRDS(ON)_Typ(@VGS=4.5V 11.7 mWApplications Load Switch PWM Applicatio

Green ProductMPG100N0660VN-Channel Power MOSFETDESCRIPTION KEYCHARACTERISTICS V =60V,I =100ADS DThe MPG100N06 uses advanced trench technology to provide R

DESCRIPTIONThe MPG100N07P uses advanced trenchtechnology to provide excellent R , low gateDS(ON)charge. It can be used in a wide variety ofapplications.KEY CHARACTERISTICSSchematic diagram V = 70V,I = 100ADS D R

Silicon N-Channel Power MOSFETDescriptionThe MPG100N06 uses advanced trench technologyto provide excellent R , low gate charge. It can beDS(ON)used in a wide variety of applications.KEY CHARACTERISTICS V =60V,I =100A R

80V N-Channel Power MOSFETDESCRIPTIONThe MPG100N08 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)in a wide variety of applications.Feature Description V = 80V,I = 100A.DS DR = 5.8m (typ.) @ V = 10V.DS(ON) GSR = 8.6m (Max.) @ V = 10V.DS(ON) GS Schematic diagram Uses CRM(CQ) advanced Trench technology. Extreme

Silicon N-Channel Power MOSFETDescriptionThe MPG100N03 uses advanced technology and design toprovide excellent R . It can be used in a wide variety ofDS(ON)applications.General FeaturesV =30V, I =100ADS DLow ON ResistanceLow Reverse transfer capacitancesSchematic diagram100% Single Pulse avalanche energy TestApplicationPower switching applicationA