All MOSFET. G100N04 Datasheet

 

G100N04 Datasheet and Replacement


   Type Designator: G100N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO220
 

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G100N04 Datasheet (PDF)

 ..1. Size:1134K  goford
 g100n04.pdf pdf_icon

G100N04

GOFORDG100N04Description The G100N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 10040V 7 5.2 A High density cell design for ultra low Rdson Fully characterized ava

 8.1. Size:1492K  goford
 g100n03.pdf pdf_icon

G100N04

GOFORD G100N03 Description The G100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @10V (Typ)30V 4m 100A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

 8.2. Size:955K  oriental semi
 sfg100n08kf.pdf pdf_icon

G100N04

 8.3. Size:844K  oriental semi
 sfg100n08gf.pdf pdf_icon

G100N04

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Datasheet: G2009 , G2009K , G20N20 , G2304 , G2305 , G2502 , G2503 , G100N03 , IRFP250 , G10N10 , G110N06 , G120N04 , G120N04A , G15P04 , G1815 , G1816 , G1825 .

History: OSG70R1K4FF | PMZ320UPE | SLD60R380S2 | 2SK2130 | IXTA4N150HV

Keywords - G100N04 MOSFET datasheet

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