G100N04 MOSFET. Datasheet pdf. Equivalent

   Type Designator: G100N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 90 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.9 V
   |Id|ⓘ - Maximum Drain Current: 100 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 50 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 750 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
   Package: TO220

G100N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

G100N04 Datasheet (PDF)

..1. Size:1134K goford
g100n04.pdf

GOFORDG100N04Description The G100N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @4.5V (Typ) @ 10V (Typ)m m 10040V 7 5.2 A High density cell design for ultra low Rdson Fully characterized ava

8.1. Size:1492K goford
g100n03.pdf

GOFORD G100N03 Description The G100N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDSS RDS(ON) IDSchematic diagram @10V (Typ)30V 4m 100A High density cell design for ultra low Rdson Fully characterized avalanche voltage and current

8.2. Size:955K oriental semi
sfg100n08kf.pdf