G110N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: G110N06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 120 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 55 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 110 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Cossⓘ - Capacitancia de salida: 380 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0064 Ohm
Encapsulados: TO220 TO251 TO252
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G110N06 datasheet
g110n06 to252 to251.pdf
GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features VDSS RDS(ON) ID @ 10V (Typ) TO-252 TO-251 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Test
g110n06 to220.pdf
GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features Schematic diagram VDSS RDS(ON) ID @ 10V (Typ) 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Te
g110n06 to252.pdf
GOFORD G110N06. Description The G110N06. uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features Schematic diagram VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) m m 110 55V 5.8 5.4 A High density cell design for ultra low Rdson Fully characteriz
g110n06k.pdf
GOFORD G110N06K General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features VDSS RDS(ON) ID Schematic diagram @ 10V (Typ) 55V 5.2 m 110A Ultra Low On-Resistance High UIS and UIS 100% Tes
Otros transistores... G20N20 , G2304 , G2305 , G2502 , G2503 , G100N03 , G100N04 , G10N10 , IRFP450 , G120N04 , G120N04A , G15P04 , G1815 , G1816 , G1825 , 15P03 , 16N10 .
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