G110N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: G110N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 120 W

Tensión drenaje-fuente (Vds): 55 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 110 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 380 pF

Resistencia drenaje-fuente RDS(on): 0.0064 Ohm

Empaquetado / Estuche: TO220, TO251, TO252

Búsqueda de reemplazo de MOSFET G110N06

G110N06 Datasheet (PDF)

1.1. g110n06 to252.pdf Size:1351K _goford

GOFORD G110N06. Description The G110N06. uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features ● Schematic diagram VDSS RDS(ON) RDS(ON) ID @ 4.5V (Typ) @ 10V (Typ) mΩ mΩ 110 55V 5.8 5.4 A ● High density cell design for ultra low Rdson ● Fully characteriz

1.2. g110n06 to220.pdf Size:1574K _goford

GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features Schematic diagram ● VDSS RDS(ON) ID @ 10V (Typ) 55V 5.2 m Ω 110A ● Ultra Low On-Resistance ● High UIS and UIS 100% Te

1.3. g110n06 to252 to251.pdf Size:1551K _goford

GOFORD G110N06 General Description The G110N06 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching applications. Features ● VDSS RDS(ON) ID @ 10V (Typ) TO-252 TO-251 55V 5.2 m Ω 110A ● Ultra Low On-Resistance ● High UIS and UIS 100% Test

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